ATE550789T1 - Hochleistungs-leuchtdioden mit hoher leuchtdichte und verfahren zu ihrer herstellung - Google Patents

Hochleistungs-leuchtdioden mit hoher leuchtdichte und verfahren zu ihrer herstellung

Info

Publication number
ATE550789T1
ATE550789T1 AT03755380T AT03755380T ATE550789T1 AT E550789 T1 ATE550789 T1 AT E550789T1 AT 03755380 T AT03755380 T AT 03755380T AT 03755380 T AT03755380 T AT 03755380T AT E550789 T1 ATE550789 T1 AT E550789T1
Authority
AT
Austria
Prior art keywords
light
electrode
legs
production
diodes
Prior art date
Application number
AT03755380T
Other languages
English (en)
Inventor
Yongsheng Zhao
William So
Kevin Y Ma
Chyi Chern
Heng Liu
Eugene Ruddy
Original Assignee
Lumei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumei Optoelectronics Corp filed Critical Lumei Optoelectronics Corp
Application granted granted Critical
Publication of ATE550789T1 publication Critical patent/ATE550789T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
AT03755380T 2002-05-24 2003-05-20 Hochleistungs-leuchtdioden mit hoher leuchtdichte und verfahren zu ihrer herstellung ATE550789T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/155,001 US6650018B1 (en) 2002-05-24 2002-05-24 High power, high luminous flux light emitting diode and method of making same
PCT/US2003/015738 WO2003100874A1 (en) 2002-05-24 2003-05-20 High power, high luminous flux light emitting diode and method of making same

Publications (1)

Publication Number Publication Date
ATE550789T1 true ATE550789T1 (de) 2012-04-15

Family

ID=29419595

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03755380T ATE550789T1 (de) 2002-05-24 2003-05-20 Hochleistungs-leuchtdioden mit hoher leuchtdichte und verfahren zu ihrer herstellung

Country Status (7)

Country Link
US (2) US6650018B1 (de)
EP (1) EP1509957B1 (de)
KR (1) KR100949787B1 (de)
CN (1) CN100385689C (de)
AT (1) ATE550789T1 (de)
AU (1) AU2003247380A1 (de)
WO (1) WO2003100874A1 (de)

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AU2003247380A1 (en) 2003-12-12
US20030218176A1 (en) 2003-11-27
HK1082984A1 (zh) 2006-06-23
US20040041160A1 (en) 2004-03-04
EP1509957A4 (de) 2006-10-04
KR100949787B1 (ko) 2010-03-30
WO2003100874A1 (en) 2003-12-04
EP1509957A1 (de) 2005-03-02
KR20050074280A (ko) 2005-07-18
CN1666351A (zh) 2005-09-07
CN100385689C (zh) 2008-04-30
EP1509957B1 (de) 2012-03-21
US6650018B1 (en) 2003-11-18

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