ATE551724T1 - Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostruktur - Google Patents

Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostruktur

Info

Publication number
ATE551724T1
ATE551724T1 AT07852863T AT07852863T ATE551724T1 AT E551724 T1 ATE551724 T1 AT E551724T1 AT 07852863 T AT07852863 T AT 07852863T AT 07852863 T AT07852863 T AT 07852863T AT E551724 T1 ATE551724 T1 AT E551724T1
Authority
AT
Austria
Prior art keywords
boraluminum
heteros
field effect
effect transistor
diamond
Prior art date
Application number
AT07852863T
Other languages
English (en)
Inventor
Jeffrey R Laroche
William E Hoke
Steven D Bernstein
Ralph Korenstein
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of ATE551724T1 publication Critical patent/ATE551724T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/871—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT07852863T 2006-11-08 2007-10-19 Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostruktur ATE551724T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/557,514 US7557378B2 (en) 2006-11-08 2006-11-08 Boron aluminum nitride diamond heterostructure
PCT/US2007/022325 WO2008057193A1 (en) 2006-11-08 2007-10-19 Boron aluminum nitride diamond heterostructure

Publications (1)

Publication Number Publication Date
ATE551724T1 true ATE551724T1 (de) 2012-04-15

Family

ID=39145421

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07852863T ATE551724T1 (de) 2006-11-08 2007-10-19 Feldeffekttransistor mit einer boraluminiumnitrid-diamantheterostruktur

Country Status (4)

Country Link
US (2) US7557378B2 (de)
EP (2) EP2455973B1 (de)
AT (1) ATE551724T1 (de)
WO (1) WO2008057193A1 (de)

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US7498191B2 (en) * 2006-05-22 2009-03-03 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
JP2010517263A (ja) * 2007-01-22 2010-05-20 エレメント シックス リミテッド ダイヤモンド電子デバイス及びそれらの製造方法
WO2011005444A1 (en) 2009-06-22 2011-01-13 Raytheon Company Gallium nitride for liquid crystal electrodes
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US20130026480A1 (en) 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US20130032810A1 (en) 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
JP2013229493A (ja) * 2012-04-26 2013-11-07 Sharp Corp Ｉｉｉ族窒化物半導体積層基板およびｉｉｉ族窒化物半導体電界効果トランジスタ
WO2013177514A1 (en) 2012-05-24 2013-11-28 Raytheon Company Coherent combiner for high power beams
NZ713761A (en) 2013-05-24 2017-05-26 Raytheon Co Adaptive-optic having meander resistors
US9876102B2 (en) 2015-07-17 2018-01-23 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple carrier channels
US11069834B2 (en) 2017-09-18 2021-07-20 King Abdullah University Of Science And Technology Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
CN107731916B (zh) * 2017-10-12 2024-02-13 中国电子科技集团公司第十三研究所 半导体器件及利用异质结形成金刚石n型导电沟道的方法
WO2019077474A1 (en) * 2017-10-16 2019-04-25 King Abdullah University Of Science And Technology NITRIDE III SEMICONDUCTOR DEVICES HAVING A BORON NITRIDE ALLOY CONTACT LAYER AND METHOD FOR PRODUCING THE SAME
CN111223927B (zh) * 2020-04-22 2021-07-30 浙江集迈科微电子有限公司 GaN-金刚石-Si半导体结构、器件及制备方法
CN115440812B (zh) * 2022-09-30 2026-02-10 中科苏州微电子产业技术研究院 一种基于金刚石的横向hemt器件及其制造方法
CN116313745B (zh) * 2023-01-09 2026-01-23 西安电子科技大学 一种改善晶格失配的硼铝氮/金刚石二维电子气异质结结构及其制备方法
CN119855166A (zh) * 2024-12-31 2025-04-18 武汉大学 基于极化界面二维电子气效应的金刚石二极管及其制备方法

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US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
JP3436278B2 (ja) * 1994-09-16 2003-08-11 住友電気工業株式会社 電界効果トランジスタ
EP0730044B1 (de) * 1995-03-01 2001-06-20 Sumitomo Electric Industries, Limited Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung
US20050139838A1 (en) * 2003-12-26 2005-06-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
FR2875337A1 (fr) * 2004-09-13 2006-03-17 Picogiga Internat Soc Par Acti Structures hemt piezoelectriques a desordre d'alliage nul

Also Published As

Publication number Publication date
EP2082431A1 (de) 2009-07-29
US7557378B2 (en) 2009-07-07
EP2455973B1 (de) 2016-03-23
EP2455973A3 (de) 2012-09-12
EP2455973A2 (de) 2012-05-23
US20080121897A1 (en) 2008-05-29
US20100090228A1 (en) 2010-04-15
US7968865B2 (en) 2011-06-28
EP2082431B1 (de) 2012-03-28
WO2008057193A1 (en) 2008-05-15

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