ATE551726T1 - Transistor mit vertikal isoliertem gate und herstellungsverfahren - Google Patents

Transistor mit vertikal isoliertem gate und herstellungsverfahren

Info

Publication number
ATE551726T1
ATE551726T1 AT03813280T AT03813280T ATE551726T1 AT E551726 T1 ATE551726 T1 AT E551726T1 AT 03813280 T AT03813280 T AT 03813280T AT 03813280 T AT03813280 T AT 03813280T AT E551726 T1 ATE551726 T1 AT E551726T1
Authority
AT
Austria
Prior art keywords
trench
insulated gate
gate transistor
manufacturing
layer
Prior art date
Application number
AT03813280T
Other languages
English (en)
Inventor
Jurriaan Schmitz
Raymond J E Hueting
Erwin A Hijzen
Andreas H Montree
T Zandt Michael A A In
Gerrit E J Koops
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE551726T1 publication Critical patent/ATE551726T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT03813280T 2002-12-14 2003-12-08 Transistor mit vertikal isoliertem gate und herstellungsverfahren ATE551726T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0229217.5A GB0229217D0 (en) 2002-12-14 2002-12-14 Vertical insulated gate transistor and manufacturing method
PCT/IB2003/006015 WO2004055904A1 (en) 2002-12-14 2003-12-08 Vertical insulated gate transistor and manufacturing method

Publications (1)

Publication Number Publication Date
ATE551726T1 true ATE551726T1 (de) 2012-04-15

Family

ID=9949715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03813280T ATE551726T1 (de) 2002-12-14 2003-12-08 Transistor mit vertikal isoliertem gate und herstellungsverfahren

Country Status (9)

Country Link
US (1) US7262460B2 (de)
EP (1) EP1573824B1 (de)
JP (1) JP2006510215A (de)
KR (1) KR20050085608A (de)
CN (1) CN100459155C (de)
AT (1) ATE551726T1 (de)
AU (1) AU2003303013A1 (de)
GB (1) GB0229217D0 (de)
WO (1) WO2004055904A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405452B2 (en) * 2004-02-02 2008-07-29 Hamza Yilmaz Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
US7250668B2 (en) * 2005-01-20 2007-07-31 Diodes, Inc. Integrated circuit including power diode
JP2007035841A (ja) * 2005-07-26 2007-02-08 Toshiba Corp 半導体装置
US7423317B2 (en) * 2005-07-27 2008-09-09 International Rectifier Corporation Split electrode gate trench power device
JP2007311574A (ja) * 2006-05-18 2007-11-29 Nec Electronics Corp 半導体装置及びその製造方法
KR100780598B1 (ko) * 2006-12-05 2007-11-30 주식회사 하이닉스반도체 벌브형 리세스 게이트를 갖는 반도체 소자의 제조 방법
US7879663B2 (en) * 2007-03-08 2011-02-01 Freescale Semiconductor, Inc. Trench formation in a semiconductor material
US20090053869A1 (en) * 2007-08-22 2009-02-26 Infineon Technologies Austria Ag Method for producing an integrated circuit including a trench transistor and integrated circuit
JP2009049315A (ja) * 2007-08-22 2009-03-05 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP5587535B2 (ja) * 2007-11-14 2014-09-10 ローム株式会社 半導体装置
JP2009176953A (ja) * 2008-01-24 2009-08-06 Rohm Co Ltd 半導体装置
US8039908B2 (en) * 2009-11-11 2011-10-18 International Business Machines Corporation Damascene gate having protected shorting regions
US9136397B2 (en) 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
US9184281B2 (en) 2013-10-30 2015-11-10 Infineon Technologies Ag Method for manufacturing a vertical semiconductor device and vertical semiconductor device
WO2015140806A1 (en) * 2014-03-20 2015-09-24 Skokie Swift Corporation Vertical field effect transistor having a disc shaped gate
CN106298884A (zh) * 2016-09-27 2017-01-04 西安后羿半导体科技有限公司 优化fom值的沟槽功率mos管器件及其制造方法
CN107895737A (zh) * 2017-11-30 2018-04-10 上海华虹宏力半导体制造有限公司 沟槽栅功率晶体管及其制造方法
CN113035948B (zh) * 2019-12-24 2022-08-30 珠海格力电器股份有限公司 功率器件、电力电子设备及功率器件的制作方法
CN115188767B (zh) * 2021-04-02 2024-07-12 长鑫存储技术有限公司 与门结构及与门结构的制造方法
CN113192828B (zh) * 2021-04-29 2023-04-11 长鑫存储技术有限公司 半导体结构的制备方法和半导体结构
CN113644125A (zh) * 2021-10-18 2021-11-12 芯长征微电子制造(山东)有限公司 能降低米勒电容的功率半导体器件及制备方法
US20250338547A1 (en) * 2024-04-26 2025-10-30 Wolfspeed, Inc. Gate trench power semiconductor devices having split gate electrodes
CN119092547A (zh) * 2024-08-30 2024-12-06 长飞先进半导体(武汉)有限公司 功率器件及制备方法、功率模块、功率转换电路和车辆

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133574A (en) * 1979-04-05 1980-10-17 Nec Corp Insulated gate field effect transistor
US5242845A (en) * 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
JP3850054B2 (ja) * 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
JPH09181311A (ja) * 1995-12-27 1997-07-11 Nec Kansai Ltd 電界効果トランジスタおよびその製造方法
US6201730B1 (en) * 1999-06-01 2001-03-13 Infineon Technologies North America Corp. Sensing of memory cell via a plateline
US6444528B1 (en) * 2000-08-16 2002-09-03 Fairchild Semiconductor Corporation Selective oxide deposition in the bottom of a trench
KR100398955B1 (ko) * 2001-08-02 2003-09-19 삼성전자주식회사 이이피롬 메모리 셀 및 형성 방법

Also Published As

Publication number Publication date
AU2003303013A1 (en) 2004-07-09
EP1573824A1 (de) 2005-09-14
GB0229217D0 (en) 2003-01-22
CN1726597A (zh) 2006-01-25
CN100459155C (zh) 2009-02-04
EP1573824B1 (de) 2012-03-28
JP2006510215A (ja) 2006-03-23
US20060049453A1 (en) 2006-03-09
WO2004055904A1 (en) 2004-07-01
KR20050085608A (ko) 2005-08-29
US7262460B2 (en) 2007-08-28

Similar Documents

Publication Publication Date Title
ATE551726T1 (de) Transistor mit vertikal isoliertem gate und herstellungsverfahren
TW200644169A (en) Methods of forming recessed access devices associated with semiconductor constructions
EP2264746A3 (de) Verfahren zur Herstellung eines Hochspannungsfeldeffekttransistors
WO2005053031A3 (en) Trench insulated gate field effect transistor
TW200507255A (en) Semiconductor device and method of fabricating the same
WO2002009177A3 (en) Power mosfet and method for forming same using a self-aligned body implant
WO2007110832A3 (en) Trench-gate semiconductor device and method of fabrication thereof
WO2007021701A3 (en) Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor
WO2001082359A3 (en) Method of making a semiconductor device having a recessed insulating layer of varying thickness
WO2002043117A3 (en) Trench gate fermi-threshold field effect transistors and methods of fabricating the same
WO2004038804A3 (en) Semiconductor device having a u-shaped gate structure
WO2005036650A3 (en) Insulated gate type semiconductor device and manufacturing method thereof
TW200501424A (en) Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication the same
GB0107408D0 (en) Field effect transistor structure and method of manufacture
TW346680B (en) Semiconductor device and process for producing the same
WO2008021204B1 (en) Termination design for deep source electrode mosfet
WO2001082380A3 (en) Power semiconductor device having a trench gate electrode and method of making the same
WO2003019671A3 (en) Vertical dual gate field effect transistor
TW200713468A (en) Fabrication method for a trench transistor and corresponding trench transistor
WO2001006568A3 (en) Trench-gate field-effect transistors and their manufacture
WO2002086904A3 (en) Vertical transistor trench capacitor memory cell and method of making the same
TW200514264A (en) High performance semiconductor devices fabrication with strain-induced process and methods for making same
TW340960B (en) Process for forming deep trench drams with sub-groundrule gates
WO2002097876A3 (en) Manufacture of trench-gate field-effect transistors
WO2002078090A3 (en) Field-effect transistor structure and method of manufacture