ATE551881T1 - Verfahren und einrichtung zum erzeugen insbesondere von euv-strahlung und/oder weicher röntgenstrahlung - Google Patents

Verfahren und einrichtung zum erzeugen insbesondere von euv-strahlung und/oder weicher röntgenstrahlung

Info

Publication number
ATE551881T1
ATE551881T1 AT04801546T AT04801546T ATE551881T1 AT E551881 T1 ATE551881 T1 AT E551881T1 AT 04801546 T AT04801546 T AT 04801546T AT 04801546 T AT04801546 T AT 04801546T AT E551881 T1 ATE551881 T1 AT E551881T1
Authority
AT
Austria
Prior art keywords
plasma
radiation
soft
generating
ray
Prior art date
Application number
AT04801546T
Other languages
English (en)
Inventor
Guenther Hans Derra
Rolf Theo Anton Apetz
Willi Neff
Oliver Rosier
Peter Zink
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE551881T1 publication Critical patent/ATE551881T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
AT04801546T 2003-12-17 2004-12-13 Verfahren und einrichtung zum erzeugen insbesondere von euv-strahlung und/oder weicher röntgenstrahlung ATE551881T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10359464A DE10359464A1 (de) 2003-12-17 2003-12-17 Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
PCT/IB2004/052769 WO2005060321A2 (en) 2003-12-17 2004-12-13 Method and device for generating in particular euv radiation and/or soft x-ray radiation

Publications (1)

Publication Number Publication Date
ATE551881T1 true ATE551881T1 (de) 2012-04-15

Family

ID=34683520

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04801546T ATE551881T1 (de) 2003-12-17 2004-12-13 Verfahren und einrichtung zum erzeugen insbesondere von euv-strahlung und/oder weicher röntgenstrahlung

Country Status (8)

Country Link
US (1) US7809112B2 (de)
EP (1) EP1716726B1 (de)
JP (1) JP5183928B2 (de)
CN (1) CN101390453B (de)
AT (1) ATE551881T1 (de)
DE (1) DE10359464A1 (de)
TW (1) TWI412300B (de)
WO (1) WO2005060321A2 (de)

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* Cited by examiner, † Cited by third party
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US9097983B2 (en) 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
WO2015012982A1 (en) * 2013-07-22 2015-01-29 Johnson Kenneth C Scanned-spot-array duv lithography system
US9188874B1 (en) 2011-05-09 2015-11-17 Kenneth C. Johnson Spot-array imaging system for maskless lithography and parallel confocal microscopy
US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
US8040030B2 (en) 2006-05-16 2011-10-18 Koninklijke Philips Electronics N.V. Method of increasing the conversion efficiency of an EUV and/or soft X-ray lamp and a corresponding apparatus
GB0613882D0 (en) * 2006-07-12 2006-08-23 Kidde Ip Holdings Ltd Smoke detector
US8766212B2 (en) 2006-07-19 2014-07-01 Asml Netherlands B.V. Correction of spatial instability of an EUV source by laser beam steering
US7518135B2 (en) * 2006-12-20 2009-04-14 Asml Netherlands B.V. Reducing fast ions in a plasma radiation source
US7872244B2 (en) 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009087807A (ja) * 2007-10-01 2009-04-23 Tokyo Institute Of Technology 極端紫外光発生方法及び極端紫外光光源装置
JP4893730B2 (ja) * 2008-12-25 2012-03-07 ウシオ電機株式会社 極端紫外光光源装置
DE102010047419B4 (de) 2010-10-01 2013-09-05 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur Erzeugung von EUV-Strahlung aus einem Gasentladungsplasma
EP2648489A1 (de) * 2012-04-02 2013-10-09 Excico France Verfahren zur Stabilisierung eines Plasmas und eine verbesserte Ionisierungskammer
CN104701730B (zh) * 2015-03-17 2018-12-28 华中科技大学 一种产生近似圆偏的极紫外相干光源的方法
US10359376B2 (en) * 2016-07-20 2019-07-23 Malvern Panalytical B.V. Sample holder for X-ray analysis
US10103519B2 (en) * 2016-08-17 2018-10-16 General Electric Company Krypton-85-free spark gap with photo-emission
KR102460837B1 (ko) 2020-04-13 2022-11-01 주식회사 일렉필드퓨처 엑스레이 및 자외선 발생소자 및 장치
KR102869505B1 (ko) 2023-03-13 2025-10-14 주식회사 일렉필드퓨처 자외선장치
KR102869512B1 (ko) 2023-04-18 2025-10-14 주식회사 일렉필드퓨처 휴대 가능한 자외선장치
JP2025145961A (ja) * 2024-03-22 2025-10-03 ウシオ電機株式会社 光源装置及び回転体

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US4588667A (en) * 1984-05-15 1986-05-13 Xerox Corporation Electrophotographic imaging member and process comprising sputtering titanium on substrate
EP0219826B1 (de) * 1985-10-24 1994-09-07 Texas Instruments Incorporated System für Vakuumbehandlung
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JPH03201399A (ja) * 1989-12-27 1991-09-03 Shimadzu Corp Ｘ線発生方法
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
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JP2001160499A (ja) * 1999-12-03 2001-06-12 Japan Atom Energy Res Inst 金属プラズマ放電型ｘ線発生装置
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
JP2002118087A (ja) * 2000-06-29 2002-04-19 Dms Co Ltd 紫外線照査装置
US6667484B2 (en) * 2000-07-03 2003-12-23 Asml Netherlands B.V. Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby
DE10139677A1 (de) 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
DE10151080C1 (de) 2001-10-10 2002-12-05 Xtreme Tech Gmbh Einrichtung und Verfahren zum Erzeugen von extrem ultravioletter (EUV-)Strahlung auf Basis einer Gasentladung
JP2003288998A (ja) * 2002-03-27 2003-10-10 Ushio Inc 極端紫外光源
DE10238096B3 (de) * 2002-08-21 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe
EP1401248B1 (de) * 2002-09-19 2012-07-25 ASML Netherlands B.V. Strahlungsquelle, Lithographiegerät und Methode zur Herstellung von Bauelementen
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
EP1642482B1 (de) * 2003-06-27 2013-10-02 Bruker Advanced Supercon GmbH Vorrichtung und verfahren zur erzeugung von extrem ultravioletter strahlung oder weicher röntgenstrahlung
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Also Published As

Publication number Publication date
JP2007525799A (ja) 2007-09-06
EP1716726B1 (de) 2012-03-28
US20080298552A1 (en) 2008-12-04
CN101390453B (zh) 2011-08-03
JP5183928B2 (ja) 2013-04-17
TW200526086A (en) 2005-08-01
TWI412300B (zh) 2013-10-11
US7809112B2 (en) 2010-10-05
CN101390453A (zh) 2009-03-18
DE10359464A1 (de) 2005-07-28
WO2005060321A2 (en) 2005-06-30
EP1716726A2 (de) 2006-11-02
WO2005060321A3 (en) 2007-10-11
WO2005060321A8 (en) 2006-08-24

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