ATE553236T1 - Vorrichtung aus piezoelektrischem einkristall und verfahren zu ihrer herstellung - Google Patents

Vorrichtung aus piezoelektrischem einkristall und verfahren zu ihrer herstellung

Info

Publication number
ATE553236T1
ATE553236T1 AT04252865T AT04252865T ATE553236T1 AT E553236 T1 ATE553236 T1 AT E553236T1 AT 04252865 T AT04252865 T AT 04252865T AT 04252865 T AT04252865 T AT 04252865T AT E553236 T1 ATE553236 T1 AT E553236T1
Authority
AT
Austria
Prior art keywords
single crystal
crystal device
piezoelectric single
producing same
orthogonal
Prior art date
Application number
AT04252865T
Other languages
English (en)
Inventor
Mitsuyoshi Matsushita
Yousuke Iwasaki
Original Assignee
Jfe Mineral Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jfe Mineral Co Ltd filed Critical Jfe Mineral Co Ltd
Application granted granted Critical
Publication of ATE553236T1 publication Critical patent/ATE553236T1/de

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
    • F16K1/32—Details
    • F16K1/54—Arrangements for modifying the way in which the rate of flow varies during the actuation of the valve
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K27/00—Construction of housing; Use of materials therefor
    • F16K27/02—Construction of housing; Use of materials therefor of lift valves
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
    • F16K37/0008—Mechanical means
    • F16K37/0016—Mechanical means having a graduated scale
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/095—Forming inorganic materials by melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT04252865T 2003-05-21 2004-05-17 Vorrichtung aus piezoelektrischem einkristall und verfahren zu ihrer herstellung ATE553236T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003143668 2003-05-21

Publications (1)

Publication Number Publication Date
ATE553236T1 true ATE553236T1 (de) 2012-04-15

Family

ID=33095444

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04252865T ATE553236T1 (de) 2003-05-21 2004-05-17 Vorrichtung aus piezoelektrischem einkristall und verfahren zu ihrer herstellung

Country Status (5)

Country Link
US (1) US7015628B2 (de)
EP (1) EP1479796B1 (de)
KR (1) KR100628812B1 (de)
CN (1) CN100405628C (de)
AT (1) ATE553236T1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4373777B2 (ja) * 2003-12-26 2009-11-25 敏夫 小川 圧電デバイス
JP4568529B2 (ja) * 2004-04-30 2010-10-27 Ｊｆｅミネラル株式会社 圧電単結晶素子
US7402938B2 (en) * 2004-10-29 2008-07-22 Jfe Mineral Co., Ltd. Piezoelectric single crystal device
JP4845879B2 (ja) * 2005-03-18 2011-12-28 日本碍子株式会社 圧電素子の検査方法、検査装置及び分極処理方法
JP5297576B2 (ja) * 2005-03-28 2013-09-25 セイコーエプソン株式会社 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置
JP5041765B2 (ja) * 2005-09-05 2012-10-03 キヤノン株式会社 エピタキシャル酸化物膜、圧電膜、圧電膜素子、圧電膜素子を用いた液体吐出ヘッド及び液体吐出装置
JP5127268B2 (ja) * 2007-03-02 2013-01-23 キヤノン株式会社 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置
JP5307986B2 (ja) * 2007-05-07 2013-10-02 富士フイルム株式会社 圧電素子とその製造方法、及び液体吐出装置
JP2008311634A (ja) * 2007-05-14 2008-12-25 Fujifilm Corp 圧電素子及びその駆動方法、圧電装置、液体吐出装置
KR100929552B1 (ko) 2007-12-28 2009-12-03 한국과학기술연구원 [110] 방향으로 분극된 완화형 강유전체 단결정을 이용한에너지 하베스터
US8907546B2 (en) 2010-08-10 2014-12-09 Wesley S. Hackenberger Temperature and field stable relaxor-PT piezoelectric single crystals
US8987976B2 (en) * 2011-09-23 2015-03-24 Qualcomm Incorporated Piezoelectric resonator having combined thickness and width vibrational modes
JP6246719B2 (ja) 2011-10-18 2017-12-13 ダルハウジー ユニバーシティー 圧電材料及び特性制御方法
JP5935870B2 (ja) 2012-03-08 2016-06-15 コニカミノルタ株式会社 圧電デバイス、超音波探触子、液滴吐出装置および圧電デバイスの製造方法
CN105308496A (zh) 2012-04-04 2016-02-03 P·韩 电光单晶元件、该元件的制造方法以及使用该元件的系统
CN102644114A (zh) * 2012-04-16 2012-08-22 中国科学院福建物质结构研究所 一种铁电单晶铌镥酸铅-钛酸铅及其制备方法
JP6254157B2 (ja) * 2012-06-12 2017-12-27 ユニバーシティ・オブ・カンザス 圧電性複合体とその製造方法
CN102817080A (zh) * 2012-09-04 2012-12-12 中国科学院上海硅酸盐研究所 一种铌镥酸铅-铌镁酸铅-钛酸铅三元系弛豫铁电单晶及其制备方法
JP6091951B2 (ja) * 2013-03-25 2017-03-08 東芝メディカルシステムズ株式会社 圧電振動子、超音波プローブ、圧電振動子製造方法および超音波プローブ製造方法
CN103952757B (zh) * 2014-04-21 2016-08-24 山东大学 三硼酸铋晶体高温压电切型及其在高温压电领域的应用
CN105405959B (zh) * 2015-10-29 2018-02-09 上海师范大学 一种横向伸缩振动模式的三元系弛豫铁电单晶压电变压器
JP6654435B2 (ja) * 2016-01-07 2020-02-26 株式会社ディスコ ウエーハ生成方法
CN106441509A (zh) * 2016-09-14 2017-02-22 华北电力大学 非浸入式液位测量传感器及其安装与应用方法
CN106500800A (zh) * 2016-09-27 2017-03-15 华北电力大学 一种基于超声导波的密闭容器液位测量方法
JP6787852B2 (ja) * 2017-08-09 2020-11-18 Ｊｆｅミネラル株式会社 圧電単結晶インゴットの製造方法および圧電単結晶インゴット
JP7366006B2 (ja) 2017-09-01 2023-10-20 ティーアールエス・テクノロジーズ・インコーポレーテッド 極性ナノ領域エンジニアードリラクサー－ＰｂＴｉＯ３強誘電性結晶
CN112786776A (zh) * 2020-12-25 2021-05-11 西安交通大学 一种压电单晶驱动器及其制备方法
JP2026508080A (ja) * 2023-01-31 2026-03-10 チェアマン，ディフェンス リサーチ アンド ディヴェロップメント オーガナイゼーション （ディーアールディーオー） 圧電単結晶トランスデューサ素子およびその製造方法

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JP3258111B2 (ja) * 1992-02-12 2002-02-18 株式会社東芝 超音波送受信素子、超音波プローブおよび超音波治療装置用送波器
JP2001509312A (ja) * 1997-01-28 2001-07-10 ザ ペンステート リサーチファウンデーション 超音波変換器のためのリラクサー強誘電体単結晶
US5804907A (en) * 1997-01-28 1998-09-08 The Penn State Research Foundation High strain actuator using ferroelectric single crystal
JP3399785B2 (ja) * 1997-05-27 2003-04-21 富士通株式会社 圧電体装置及びその製造方法
US6465937B1 (en) * 2000-03-08 2002-10-15 Koninklijke Philips Electronics N.V. Single crystal thickness and width cuts for enhanced ultrasonic transducer
JP3987744B2 (ja) * 2002-03-25 2007-10-10 敏夫 小川 ドメイン制御圧電単結晶素子

Also Published As

Publication number Publication date
US7015628B2 (en) 2006-03-21
EP1479796B1 (de) 2012-04-11
US20040232803A1 (en) 2004-11-25
KR20040100917A (ko) 2004-12-02
KR100628812B1 (ko) 2006-09-26
CN1574408A (zh) 2005-02-02
CN100405628C (zh) 2008-07-23
EP1479796A2 (de) 2004-11-24
EP1479796A3 (de) 2010-08-18

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