ATE554519T1 - Vertikalresonator-oberflächenemissionslaser und bilderzeugungsvorrichtung mit vertikalresonator- oberflächenemissionslaser - Google Patents
Vertikalresonator-oberflächenemissionslaser und bilderzeugungsvorrichtung mit vertikalresonator- oberflächenemissionslaserInfo
- Publication number
- ATE554519T1 ATE554519T1 AT08016480T AT08016480T ATE554519T1 AT E554519 T1 ATE554519 T1 AT E554519T1 AT 08016480 T AT08016480 T AT 08016480T AT 08016480 T AT08016480 T AT 08016480T AT E554519 T1 ATE554519 T1 AT E554519T1
- Authority
- AT
- Austria
- Prior art keywords
- emission laser
- surface emission
- resonator surface
- vertical resonator
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
- H01S5/18333—Position of the structure with more than one structure only above the active layer
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Lasers (AREA)
- Laser Beam Printer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007245540 | 2007-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE554519T1 true ATE554519T1 (de) | 2012-05-15 |
Family
ID=39967977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08016480T ATE554519T1 (de) | 2007-09-21 | 2008-09-18 | Vertikalresonator-oberflächenemissionslaser und bilderzeugungsvorrichtung mit vertikalresonator- oberflächenemissionslaser |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7796662B2 (de) |
| EP (1) | EP2040345B1 (de) |
| JP (1) | JP4974981B2 (de) |
| CN (1) | CN101394064B (de) |
| AT (1) | ATE554519T1 (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4537658B2 (ja) * | 2002-02-22 | 2010-09-01 | 株式会社リコー | 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法 |
| EP1994921A1 (de) * | 2007-05-21 | 2008-11-26 | L'Oreal | Eine Kombination von einem Filter A Hydroxyaminobenzophenon mit einem Filter B Zimsäureester und mit einer Verbindung C Piperidinole, Benzotriazole oder Dibenzoylmethan enthaltende Parfümzusammensetzung |
| JP5274038B2 (ja) * | 2008-02-06 | 2013-08-28 | キヤノン株式会社 | 垂直共振器型面発光レーザの製造方法とレーザアレイの製造方法 |
| JP5084540B2 (ja) * | 2008-02-06 | 2012-11-28 | キヤノン株式会社 | 垂直共振器型面発光レーザ |
| JP4621263B2 (ja) * | 2008-02-22 | 2011-01-26 | キヤノン株式会社 | 面発光レーザおよび画像形成装置 |
| JP5388666B2 (ja) * | 2008-04-21 | 2014-01-15 | キヤノン株式会社 | 面発光レーザ |
| JP5279392B2 (ja) * | 2008-07-31 | 2013-09-04 | キヤノン株式会社 | 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
| JP5106487B2 (ja) * | 2008-07-31 | 2012-12-26 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器 |
| JP5279393B2 (ja) * | 2008-07-31 | 2013-09-04 | キヤノン株式会社 | 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
| JP5183555B2 (ja) | 2009-04-02 | 2013-04-17 | キヤノン株式会社 | 面発光レーザアレイ |
| JP4975130B2 (ja) * | 2009-05-07 | 2012-07-11 | キヤノン株式会社 | フォトニック結晶面発光レーザ |
| JP5355276B2 (ja) | 2009-07-28 | 2013-11-27 | キヤノン株式会社 | 面発光レーザ |
| JP2011061083A (ja) * | 2009-09-11 | 2011-03-24 | Sony Corp | 半導体レーザ |
| JP2012049282A (ja) * | 2010-08-26 | 2012-03-08 | Canon Inc | 光学素子、該光学素子を備えた面発光レーザ、該面発光レーザを露光用光源として備えた電子写真装置 |
| JP5871458B2 (ja) | 2010-11-02 | 2016-03-01 | キヤノン株式会社 | 垂直共振器型面発光レーザ、画像形成装置 |
| CN102255240B (zh) * | 2011-06-02 | 2012-09-26 | 中国科学院半导体研究所 | 实现大功率横向低发散角的半导体激光器结构 |
| WO2013003569A2 (en) * | 2011-06-28 | 2013-01-03 | Luminus Devices, Inc. | Light-emitting diode architectures for enhanced performance |
| JP6061541B2 (ja) * | 2011-09-28 | 2017-01-18 | キヤノン株式会社 | 面発光レーザ、画像形成装置 |
| JP2013197377A (ja) * | 2012-03-21 | 2013-09-30 | Furukawa Electric Co Ltd:The | 面発光レーザ素子 |
| CN102637715B (zh) * | 2012-05-07 | 2015-07-22 | 中国科学院上海高等研究院 | 图像传感器 |
| US9502863B2 (en) * | 2014-08-26 | 2016-11-22 | Fuji Xerox Co., Ltd. | Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device |
| US10516251B2 (en) * | 2016-06-28 | 2019-12-24 | Vi Systems Gmbh | Reliable high-speed oxide-confined vertical-cavity surface-emitting laser |
| CN109473510B (zh) | 2017-09-07 | 2022-05-13 | 佳能株式会社 | 发光晶闸管、发光晶闸管阵列、曝光头和图像形成设备 |
| CN108879328A (zh) * | 2018-09-18 | 2018-11-23 | 厦门乾照半导体科技有限公司 | 一种提升激光增益的vcsel芯片及其制备方法 |
| US11038321B2 (en) * | 2018-10-12 | 2021-06-15 | The Board Of Trustees Of The University Of Illinois | Single mode VCSELs with low threshold and high speed operation |
| US12548979B2 (en) | 2020-02-24 | 2026-02-10 | Shenzhen Raysees AI Technology Co., Ltd. | VCSEL array with non-isolated emitters |
| CN121076587A (zh) * | 2025-11-07 | 2025-12-05 | 杰创半导体(苏州)有限公司 | 一种大功率单模vcsel激光器芯片及其制作方法 |
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| EP0435643B1 (de) * | 1989-12-27 | 1997-03-26 | Canon Kabushiki Kaisha | Bildaufzeichnungsgerät, welches Lichtstrahlen verwendet |
| US5568499A (en) * | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
| US5881085A (en) * | 1996-07-25 | 1999-03-09 | Picolight, Incorporated | Lens comprising at least one oxidized layer and method for forming same |
| EP0905835A1 (de) | 1997-09-26 | 1999-03-31 | Xerox Corporation | Einzeln ansprechbare oberflächenemittierende Vielfachlaser mit vergrabener selektiv oxidierter Öffnung |
| DE19813727C2 (de) * | 1998-03-27 | 2000-04-13 | Siemens Ag | Vertikalresonator-Laserdiode und Verfahren zu deren Herstellung |
| US6411638B1 (en) * | 1999-08-31 | 2002-06-25 | Honeywell Inc. | Coupled cavity anti-guided vertical-cavity surface-emitting laser |
| US6570905B1 (en) * | 2000-11-02 | 2003-05-27 | U-L-M Photonics Gmbh | Vertical cavity surface emitting laser with reduced parasitic capacitance |
| US6990135B2 (en) * | 2002-10-28 | 2006-01-24 | Finisar Corporation | Distributed bragg reflector for optoelectronic device |
| US6810065B1 (en) | 2000-11-28 | 2004-10-26 | Optical Communication Productions, Inc. | Low electrical resistance n-type mirror for optoelectronic devices |
| EP1257025A3 (de) * | 2001-04-18 | 2005-04-06 | The Furukawa Electric Co., Ltd. | Oberflächenemitierende Halbleiterlaservorrichtung |
| JP2002353561A (ja) * | 2001-05-23 | 2002-12-06 | Canon Inc | 面発光レーザ装置およびその製造方法 |
| JP2003133640A (ja) * | 2001-08-10 | 2003-05-09 | Furukawa Electric Co Ltd:The | 面発光半導体レーザ素子 |
| JP4537658B2 (ja) * | 2002-02-22 | 2010-09-01 | 株式会社リコー | 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法 |
| JP4629949B2 (ja) * | 2002-04-05 | 2011-02-09 | 古河電気工業株式会社 | 面発光レーザ素子、面発光レーザ素子を用いたトランシーバ、光送受信器および光通信システム |
| US6987791B2 (en) * | 2002-10-30 | 2006-01-17 | Finisar Corporation | Long wavelength vertical cavity surface emitting lasers |
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| JP4124017B2 (ja) * | 2003-05-12 | 2008-07-23 | ソニー株式会社 | 面発光型半導体レーザ素子の製造方法 |
| JP2004356438A (ja) * | 2003-05-29 | 2004-12-16 | Hamamatsu Photonics Kk | 半導体発光素子 |
| JP2005259951A (ja) * | 2004-03-11 | 2005-09-22 | Nec Corp | 面発光レーザとその製造方法、および、光通信システム |
| US20050265415A1 (en) * | 2004-05-28 | 2005-12-01 | Lambkin John D | Laser diode and method of manufacture |
| US7596165B2 (en) | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
| JP4378352B2 (ja) | 2005-04-28 | 2009-12-02 | キヤノン株式会社 | 周期構造体の製造方法 |
| JP2007027364A (ja) * | 2005-07-15 | 2007-02-01 | Ricoh Co Ltd | p型半導体分布ブラッグ反射器および面発光素子および面発光モノリシックアレイおよび電子写真システムおよび光通信システムおよび光インターコネクションシステム |
| JP5194432B2 (ja) | 2005-11-30 | 2013-05-08 | 株式会社リコー | 面発光レーザ素子 |
| JP4908837B2 (ja) | 2005-12-13 | 2012-04-04 | キヤノン株式会社 | 発光素子アレイ及び画像形成装置 |
| US7408967B2 (en) * | 2005-12-19 | 2008-08-05 | Emcore Corporation | Method of fabricating single mode VCSEL for optical mouse |
| JP2007173304A (ja) * | 2005-12-19 | 2007-07-05 | Sony Corp | 面発光型半導体レーザ |
| JP2007234824A (ja) | 2006-02-28 | 2007-09-13 | Canon Inc | 垂直共振器型面発光レーザ |
| JP4743867B2 (ja) | 2006-02-28 | 2011-08-10 | キヤノン株式会社 | 面発光レーザ |
| JP2007299895A (ja) | 2006-04-28 | 2007-11-15 | Ricoh Co Ltd | 面発光レーザ素子、それを備えた面発光レーザアレイ、面発光レーザ素子または面発光レーザアレイを備えた電子写真システム、面発光レーザ素子または面発光レーザアレイを備えた光インターコネクションシステムおよび面発光レーザ素子または面発光レーザアレイを備えた光通信システム |
| JP4110181B2 (ja) | 2006-09-01 | 2008-07-02 | キヤノン株式会社 | 半導体レーザ装置 |
| JP2008244431A (ja) | 2007-02-28 | 2008-10-09 | Canon Inc | 面発光レーザアレイ及びその製造方法、面発光レーザアレイを備えている画像形成装置 |
-
2008
- 2008-09-02 JP JP2008224646A patent/JP4974981B2/ja not_active Expired - Fee Related
- 2008-09-12 US US12/209,250 patent/US7796662B2/en not_active Expired - Fee Related
- 2008-09-18 EP EP08016480A patent/EP2040345B1/de not_active Not-in-force
- 2008-09-18 AT AT08016480T patent/ATE554519T1/de active
- 2008-09-19 CN CN2008101497020A patent/CN101394064B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2040345A1 (de) | 2009-03-25 |
| JP4974981B2 (ja) | 2012-07-11 |
| EP2040345B1 (de) | 2012-04-18 |
| JP2009094485A (ja) | 2009-04-30 |
| CN101394064B (zh) | 2011-12-14 |
| US7796662B2 (en) | 2010-09-14 |
| CN101394064A (zh) | 2009-03-25 |
| US20090080489A1 (en) | 2009-03-26 |
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