ATE556354T1 - Vermeidung der schrumpfung von linienenden bei transistoren durch zusätzliche phasenschiebermuster - Google Patents
Vermeidung der schrumpfung von linienenden bei transistoren durch zusätzliche phasenschiebermusterInfo
- Publication number
- ATE556354T1 ATE556354T1 AT02709485T AT02709485T ATE556354T1 AT E556354 T1 ATE556354 T1 AT E556354T1 AT 02709485 T AT02709485 T AT 02709485T AT 02709485 T AT02709485 T AT 02709485T AT E556354 T1 ATE556354 T1 AT E556354T1
- Authority
- AT
- Austria
- Prior art keywords
- line end
- phase shifter
- transistors
- additional phase
- endcap
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 3
- 238000004904 shortening Methods 0.000 abstract 3
- 238000000206 photolithography Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28132501P | 2001-04-03 | 2001-04-03 | |
| US09/872,620 US6553560B2 (en) | 2001-04-03 | 2001-05-31 | Alleviating line end shortening in transistor endcaps by extending phase shifters |
| PCT/US2002/004119 WO2002082182A2 (en) | 2001-04-03 | 2002-02-11 | Alleviating line end shortening in transistor endcaps by extending phase shifters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE556354T1 true ATE556354T1 (de) | 2012-05-15 |
Family
ID=26960832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02709485T ATE556354T1 (de) | 2001-04-03 | 2002-02-11 | Vermeidung der schrumpfung von linienenden bei transistoren durch zusätzliche phasenschiebermuster |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6553560B2 (de) |
| EP (1) | EP1410105B1 (de) |
| JP (2) | JP4700898B2 (de) |
| AT (1) | ATE556354T1 (de) |
| AU (1) | AU2002243967A1 (de) |
| TW (1) | TW521322B (de) |
| WO (1) | WO2002082182A2 (de) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7083879B2 (en) | 2001-06-08 | 2006-08-01 | Synopsys, Inc. | Phase conflict resolution for photolithographic masks |
| US6787271B2 (en) * | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
| US6866971B2 (en) | 2000-09-26 | 2005-03-15 | Synopsys, Inc. | Full phase shifting mask in damascene process |
| US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
| US6553560B2 (en) | 2001-04-03 | 2003-04-22 | Numerical Technologies, Inc. | Alleviating line end shortening in transistor endcaps by extending phase shifters |
| US6573010B2 (en) | 2001-04-03 | 2003-06-03 | Numerical Technologies, Inc. | Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator |
| US6593038B2 (en) | 2001-05-04 | 2003-07-15 | Numerical Technologies, Inc. | Method and apparatus for reducing color conflicts during trim generation for phase shifters |
| US6569583B2 (en) | 2001-05-04 | 2003-05-27 | Numerical Technologies, Inc. | Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts |
| US6852471B2 (en) | 2001-06-08 | 2005-02-08 | Numerical Technologies, Inc. | Exposure control for phase shifting photolithographic masks |
| US7178128B2 (en) * | 2001-07-13 | 2007-02-13 | Synopsys Inc. | Alternating phase shift mask design conflict resolution |
| US6664009B2 (en) | 2001-07-27 | 2003-12-16 | Numerical Technologies, Inc. | Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges |
| US6738958B2 (en) | 2001-09-10 | 2004-05-18 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process composite gates |
| US6698007B2 (en) | 2001-10-09 | 2004-02-24 | Numerical Technologies, Inc. | Method and apparatus for resolving coloring conflicts between phase shifters |
| US7122281B2 (en) | 2002-02-26 | 2006-10-17 | Synopsys, Inc. | Critical dimension control using full phase and trim masks |
| US6605481B1 (en) | 2002-03-08 | 2003-08-12 | Numerical Technologies, Inc. | Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit |
| US6944844B2 (en) * | 2002-04-03 | 2005-09-13 | Synopsys, Inc. | System and method to determine impact of line end shortening |
| US6704921B2 (en) | 2002-04-03 | 2004-03-09 | Numerical Technologies, Inc. | Automated flow in PSM phase assignment |
| US6785879B2 (en) * | 2002-06-11 | 2004-08-31 | Numerical Technologies, Inc. | Model-based data conversion |
| US6711732B1 (en) * | 2002-07-26 | 2004-03-23 | Taiwan Semiconductor Manufacturing Company | Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era |
| US6821689B2 (en) | 2002-09-16 | 2004-11-23 | Numerical Technologies | Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature |
| US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
| US7445874B2 (en) * | 2004-11-10 | 2008-11-04 | Chartered Semiconductor Manufacturing, Ltd | Method to resolve line end distortion for alternating phase shift mask |
| US7617473B2 (en) * | 2005-01-21 | 2009-11-10 | International Business Machines Corporation | Differential alternating phase shift mask optimization |
| US20060257795A1 (en) * | 2005-05-16 | 2006-11-16 | Benjamin Szu-Min Lin | Method for forming composite pattern including different types of patterns |
| US7407597B2 (en) * | 2006-09-14 | 2008-08-05 | Lam Research Corporation | Line end shortening reduction during etch |
| US7491343B2 (en) * | 2006-09-14 | 2009-02-17 | Lam Research Corporation | Line end shortening reduction during etch |
| US7713824B2 (en) | 2007-02-21 | 2010-05-11 | Infineon Technologies North America Corp. | Small feature integrated circuit fabrication |
| CN103105727B (zh) * | 2011-11-15 | 2014-06-04 | 无锡华润上华科技有限公司 | 形成光掩膜版的方法及光掩膜版 |
| US8856695B1 (en) | 2013-03-14 | 2014-10-07 | Samsung Electronics Co., Ltd. | Method for generating post-OPC layout in consideration of top loss of etch mask layer |
| KR102279711B1 (ko) | 2014-03-11 | 2021-07-21 | 삼성전자주식회사 | 반도체 장치의 레이아웃 방법, 포토 마스크 및 이를 이용하여 제조된 반도체 장치 |
| US9418935B1 (en) | 2015-09-09 | 2016-08-16 | Globalfoundries Inc. | Integrated circuit line ends formed using additive processing |
Family Cites Families (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4456371A (en) | 1982-06-30 | 1984-06-26 | International Business Machines Corporation | Optical projection printing threshold leveling arrangement |
| JPH0690505B2 (ja) | 1985-09-20 | 1994-11-14 | 株式会社日立製作所 | ホトマスク |
| JP2650962B2 (ja) | 1988-05-11 | 1997-09-10 | 株式会社日立製作所 | 露光方法及び素子の形成方法並びに半導体素子の製造方法 |
| JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| EP0395425B1 (de) | 1989-04-28 | 1996-10-16 | Fujitsu Limited | Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske |
| US5328807A (en) | 1990-06-11 | 1994-07-12 | Hitichi, Ltd. | Method of forming a pattern |
| JP2974821B2 (ja) | 1991-06-19 | 1999-11-10 | 沖電気工業株式会社 | パターン形成方法 |
| KR100256619B1 (ko) | 1991-07-12 | 2000-06-01 | 사와무라 시코 | 포토마스크 및 그것을 사용한 레지시트 패턴 형성방법 |
| US5364716A (en) | 1991-09-27 | 1994-11-15 | Fujitsu Limited | Pattern exposing method using phase shift and mask used therefor |
| JP3148770B2 (ja) | 1992-03-27 | 2001-03-26 | 日本電信電話株式会社 | ホトマスク及びマスクパタンデータ処理方法 |
| US5308741A (en) | 1992-07-31 | 1994-05-03 | Motorola, Inc. | Lithographic method using double exposure techniques, mask position shifting and light phase shifting |
| US5302477A (en) | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
| US5538815A (en) | 1992-09-14 | 1996-07-23 | Kabushiki Kaisha Toshiba | Method for designing phase-shifting masks with automatization capability |
| US5527645A (en) | 1993-04-21 | 1996-06-18 | Pati; Yagyensh C. | Systematic method for production of phase-shifting photolithographic masks |
| JPH07111528A (ja) | 1993-10-12 | 1995-04-25 | Matsushita Electric Ind Co Ltd | 留守番電話装置 |
| US5424154A (en) | 1993-12-10 | 1995-06-13 | Intel Corporation | Lithographic emhancement method and apparatus for randomly spaced structures |
| JP3393926B2 (ja) | 1993-12-28 | 2003-04-07 | 株式会社東芝 | フォトマスク設計方法及びその装置 |
| EP0674223B1 (de) | 1994-02-14 | 1997-05-02 | International Business Machines Corporation | Dämpfende Phasenverschiebungsmaske und Herstellungsverfahren |
| US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
| US5538833A (en) | 1994-08-03 | 1996-07-23 | International Business Machines Corporation | High resolution phase edge lithography without the need for a trim mask |
| US5537648A (en) | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
| US5472814A (en) | 1994-11-17 | 1995-12-05 | International Business Machines Corporation | Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement |
| US5565286A (en) | 1994-11-17 | 1996-10-15 | International Business Machines Corporation | Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor |
| KR0158904B1 (ko) | 1994-12-02 | 1999-02-01 | 김주용 | 콘택마스크 |
| US5523186A (en) | 1994-12-16 | 1996-06-04 | International Business Machines Corporation | Split and cover technique for phase shifting photolithography |
| JP3273456B2 (ja) | 1995-02-24 | 2002-04-08 | アルプス電気株式会社 | モータ駆動スライド型可変抵抗器 |
| US5532090A (en) | 1995-03-01 | 1996-07-02 | Intel Corporation | Method and apparatus for enhanced contact and via lithography |
| US5595843A (en) | 1995-03-30 | 1997-01-21 | Intel Corporation | Layout methodology, mask set, and patterning method for phase-shifting lithography |
| JP2638561B2 (ja) | 1995-05-10 | 1997-08-06 | 株式会社日立製作所 | マスク形成方法 |
| KR0161879B1 (ko) | 1995-09-25 | 1999-01-15 | 문정환 | 위상 반전 마스크의 구조 및 제조방법 |
| JP2917879B2 (ja) | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| US6185727B1 (en) | 1995-12-12 | 2001-02-06 | International Business Machines Corporation | Design verification for asymmetric phase shift mask layouts |
| US5885734A (en) | 1996-08-15 | 1999-03-23 | Micron Technology, Inc. | Process for modifying a hierarchical mask layout |
| US5994002A (en) | 1996-09-06 | 1999-11-30 | Matsushita Electric Industrial Co., Ltd. | Photo mask and pattern forming method |
| JP3518275B2 (ja) | 1996-09-06 | 2004-04-12 | 松下電器産業株式会社 | フォトマスクおよびパターン形成方法 |
| US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| PT927381E (pt) | 1996-09-18 | 2004-10-29 | Numerical Tech Inc | Metodo e dispositivo de producao de circuitos de mudanca de fase |
| US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5923562A (en) | 1996-10-18 | 1999-07-13 | International Business Machines Corporation | Method for automatically eliminating three way intersection design conflicts in phase edge, phase shift designs |
| US5807649A (en) | 1996-10-31 | 1998-09-15 | International Business Machines Corporation | Lithographic patterning method and mask set therefor with light field trim mask |
| JPH10207038A (ja) | 1997-01-28 | 1998-08-07 | Matsushita Electric Ind Co Ltd | レチクル及びパターン形成方法 |
| US5883813A (en) | 1997-03-04 | 1999-03-16 | International Business Machines Corporation | Automatic generation of phase shift masks using net coloring |
| US5923566A (en) | 1997-03-25 | 1999-07-13 | International Business Machines Corporation | Phase shifted design verification routine |
| US6057063A (en) | 1997-04-14 | 2000-05-02 | International Business Machines Corporation | Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
| US6370679B1 (en) * | 1997-09-17 | 2002-04-09 | Numerical Technologies, Inc. | Data hierarchy layout correction and verification method and apparatus |
| US6470489B1 (en) * | 1997-09-17 | 2002-10-22 | Numerical Technologies, Inc. | Design rule checking system and method |
| JP3101594B2 (ja) | 1997-11-06 | 2000-10-23 | キヤノン株式会社 | 露光方法及び露光装置 |
| TW363147B (en) | 1997-11-22 | 1999-07-01 | United Microelectronics Corp | Phase shifting mask |
| TW378281B (en) | 1997-11-28 | 2000-01-01 | United Microelectronics Corp | Phase shift mask and method for manufacturing the same |
| US6083275A (en) | 1998-01-09 | 2000-07-04 | International Business Machines Corporation | Optimized phase shift design migration |
| JP3307313B2 (ja) | 1998-01-23 | 2002-07-24 | ソニー株式会社 | パターン生成方法及びその装置 |
| JP4019491B2 (ja) * | 1998-03-30 | 2007-12-12 | ソニー株式会社 | 露光方法 |
| US6189136B1 (en) * | 1998-07-20 | 2001-02-13 | Philips Electronics, North America Corp. | Design level optical proximity correction methods |
| US6130012A (en) | 1999-01-13 | 2000-10-10 | Advanced Micro Devices, Inc. | Ion beam milling to generate custom reticles |
| JP3482172B2 (ja) * | 1999-03-04 | 2003-12-22 | 松下電器産業株式会社 | Lsi用パターンのレイアウト作成方法及びlsi用パターンの形成方法 |
| US6139994A (en) | 1999-06-25 | 2000-10-31 | Broeke; Doug Van Den | Use of intersecting subresolution features for microlithography |
| US6251549B1 (en) | 1999-07-19 | 2001-06-26 | Marc David Levenson | Generic phase shift mask |
| US6335128B1 (en) * | 1999-09-28 | 2002-01-01 | Nicolas Bailey Cobb | Method and apparatus for determining phase shifts and trim masks for an integrated circuit |
| US6338922B1 (en) | 2000-05-08 | 2002-01-15 | International Business Machines Corporation | Optimized alternating phase shifted mask design |
| US6503666B1 (en) | 2000-07-05 | 2003-01-07 | Numerical Technologies, Inc. | Phase shift masking for complex patterns |
| US6524752B1 (en) * | 2000-07-05 | 2003-02-25 | Numerical Technologies, Inc. | Phase shift masking for intersecting lines |
| US6978436B2 (en) | 2000-07-05 | 2005-12-20 | Synopsys, Inc. | Design data format and hierarchy management for phase processing |
| US6733929B2 (en) | 2000-07-05 | 2004-05-11 | Numerical Technologies, Inc. | Phase shift masking for complex patterns with proximity adjustments |
| US6681379B2 (en) | 2000-07-05 | 2004-01-20 | Numerical Technologies, Inc. | Phase shifting design and layout for static random access memory |
| US7028285B2 (en) | 2000-07-05 | 2006-04-11 | Synopsys, Inc. | Standard cell design incorporating phase information |
| US6430737B1 (en) * | 2000-07-10 | 2002-08-06 | Mentor Graphics Corp. | Convergence technique for model-based optical and process correction |
| US6901575B2 (en) | 2000-10-25 | 2005-05-31 | Numerical Technologies, Inc. | Resolving phase-shift conflicts in layouts using weighted links between phase shifters |
| JP2004529378A (ja) | 2001-03-08 | 2004-09-24 | ニューメリカル テクノロジーズ インコーポレイテッド | 多重レベルのマスキング解像度用の交番位相偏移マスキング |
| US6635393B2 (en) | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
| US6566019B2 (en) | 2001-04-03 | 2003-05-20 | Numerical Technologies, Inc. | Using double exposure effects during phase shifting to control line end shortening |
| US6573010B2 (en) | 2001-04-03 | 2003-06-03 | Numerical Technologies, Inc. | Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator |
| US6553560B2 (en) | 2001-04-03 | 2003-04-22 | Numerical Technologies, Inc. | Alleviating line end shortening in transistor endcaps by extending phase shifters |
| US6728912B2 (en) * | 2001-04-12 | 2004-04-27 | International Business Machines Corporation | SOI cell stability test method |
-
2001
- 2001-05-31 US US09/872,620 patent/US6553560B2/en not_active Expired - Lifetime
-
2002
- 2002-02-11 WO PCT/US2002/004119 patent/WO2002082182A2/en not_active Ceased
- 2002-02-11 JP JP2002579888A patent/JP4700898B2/ja not_active Expired - Lifetime
- 2002-02-11 AU AU2002243967A patent/AU2002243967A1/en not_active Abandoned
- 2002-02-11 EP EP02709485A patent/EP1410105B1/de not_active Expired - Lifetime
- 2002-02-11 AT AT02709485T patent/ATE556354T1/de active
- 2002-02-25 TW TW091103328A patent/TW521322B/zh not_active IP Right Cessation
- 2002-12-06 US US10/313,325 patent/US6859918B2/en not_active Expired - Lifetime
-
2009
- 2009-08-11 JP JP2009186919A patent/JP2009271550A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002243967A1 (en) | 2002-10-21 |
| EP1410105B1 (de) | 2012-05-02 |
| EP1410105A2 (de) | 2004-04-21 |
| TW521322B (en) | 2003-02-21 |
| WO2002082182A2 (en) | 2002-10-17 |
| US20030066038A1 (en) | 2003-04-03 |
| JP4700898B2 (ja) | 2011-06-15 |
| US6553560B2 (en) | 2003-04-22 |
| WO2002082182A3 (en) | 2004-02-19 |
| US6859918B2 (en) | 2005-02-22 |
| JP2004527790A (ja) | 2004-09-09 |
| JP2009271550A (ja) | 2009-11-19 |
| US20020144232A1 (en) | 2002-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2002243967A1 (en) | Alleviating line end shortening in transistor endcaps by extending phase shifters | |
| CY1112348T1 (el) | Μεθοδος εκχυλισης υπολειμματικου διαλυτη και μικροσωματιδια που παραγονται με την παρουσα μεθοδο | |
| DE69838852D1 (de) | Verfahren und vorrichtung zur kopplung von signalen zwischen zwei schaltungen, in verschiedenen taktbereichen arbeitend | |
| TW200731002A (en) | Semiconductor device and manufacturing method thereof, mask for manufacturing semiconductor and processing method of optical proximity | |
| MY139581A (en) | Rinse solution for lithography and pattern forming method using the same | |
| SG125933A1 (en) | Mask and its manufacturing method, exposure, and device fabrication method | |
| DE69522075D1 (de) | Verfahren zum Herstellen von multifunktionellen, monolithisch-integrierten Schaltungsanordnungen | |
| DE3581755D1 (de) | Behandlungsverfahren fuer integrierte schaltungen durch photolithographie. | |
| ATE347906T1 (de) | Reinigung von polysaccharid-protein-konjugat impfstoffen durch ultrafiltration mit ammoniumsulfat-lösungen | |
| DE60139777D1 (de) | Verfahren und vorrichtung zum verstellen der phase einer eingangs-/ausgangsschaltung | |
| WO2002095942A3 (en) | Dual-edge triggered dynamic logic | |
| PT927381E (pt) | Metodo e dispositivo de producao de circuitos de mudanca de fase | |
| EP1310987A4 (de) | Verfahren zur herstellung integrierter halbleiterschaltungen und verfahren zur herstellung von multichipmodulen | |
| EA200201070A1 (ru) | Способ и установка для получения бруска моющего вещества | |
| ATE555420T1 (de) | Belichtungskontrolle für phasenschiebermasken | |
| DE60028847D1 (de) | Verfahren mit reduzierter Maskenzahl für die Herstellung von Mischsspannung-CMOS mit Hochleistung-Transistoren und -I/O Transistoren von hoher Zuverlässigkeit | |
| DE3788438D1 (de) | Methode zur Herstellung von integrierten elektronischen Vorrichtungen, insbesondere Hochspannungs-P-Kanal-MOS-Transistoren. | |
| ATE254826T1 (de) | Zwischensystem-weiterreichen mit geänderten parameter | |
| WO2000028444A8 (en) | A systematic approach for regularity extraction | |
| TW200632593A (en) | Lithographic rinse solution and resist-pattern forming method using the same | |
| DE60238147D1 (de) | Verfahren zur selbstanordnung elektronischer schaltkreise und damit hergestellte schaltungen | |
| WO2003024171A3 (en) | Method of treating photoresists using electrodeless uv lamps | |
| PT1022208E (pt) | Processo para a optimizacao do tempo de encerramento das passagens de nivel | |
| KR930004307Y1 (ko) | 슈미트 트리거회로 | |
| WO2002039487A3 (de) | Vorrichtung und verfahren zur umhüllung eines elektronischen bauelements |