ATE556424T1 - Erweiterte virtuelle anode - Google Patents

Erweiterte virtuelle anode

Info

Publication number
ATE556424T1
ATE556424T1 AT07814751T AT07814751T ATE556424T1 AT E556424 T1 ATE556424 T1 AT E556424T1 AT 07814751 T AT07814751 T AT 07814751T AT 07814751 T AT07814751 T AT 07814751T AT E556424 T1 ATE556424 T1 AT E556424T1
Authority
AT
Austria
Prior art keywords
manifold
gas
anode
electrons
enhanced
Prior art date
Application number
AT07814751T
Other languages
English (en)
Inventor
John German
Original Assignee
Cardinal Cg Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cardinal Cg Co filed Critical Cardinal Cg Co
Application granted granted Critical
Publication of ATE556424T1 publication Critical patent/ATE556424T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AT07814751T 2006-09-15 2007-09-07 Erweiterte virtuelle anode ATE556424T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/532,371 US7850828B2 (en) 2006-09-15 2006-09-15 Enhanced virtual anode
PCT/US2007/077863 WO2008033724A2 (en) 2006-09-15 2007-09-07 Enhanced virtual anode

Publications (1)

Publication Number Publication Date
ATE556424T1 true ATE556424T1 (de) 2012-05-15

Family

ID=38754827

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07814751T ATE556424T1 (de) 2006-09-15 2007-09-07 Erweiterte virtuelle anode

Country Status (4)

Country Link
US (1) US7850828B2 (de)
EP (1) EP2062283B1 (de)
AT (1) ATE556424T1 (de)
WO (1) WO2008033724A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267756B1 (de) * 2007-11-01 2015-03-04 Oerlikon Trading AG, Trübbach Vakuumplasmaquellen
US20120181165A1 (en) * 2011-01-14 2012-07-19 Seagate Technology Llc In-situ gas injection for linear targets
US9176285B2 (en) 2012-05-03 2015-11-03 Adc Telecommunications, Inc. Fiber optic connector
CN105274498B (zh) * 2012-05-11 2017-10-27 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
EP2811509A1 (de) * 2013-06-07 2014-12-10 Soleras Advanced Coatings bvba Elektronische Konfiguration für Magnetron-Sputter-Deposition-Systeme
WO2016126650A1 (en) 2015-02-03 2016-08-11 Cardinal Cg Company Sputtering apparatus including gas distribution system
US20240194464A1 (en) * 2022-12-09 2024-06-13 Intevac, Inc. Stable ground anode for thin film processing
US12542263B2 (en) 2022-12-12 2026-02-03 Intevac, Inc. Cylindrical cathode and chamber using same for sputtering

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DE3521053A1 (de) 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
US4802968A (en) 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
US4849087A (en) 1988-02-11 1989-07-18 Southwall Technologies Apparatus for obtaining transverse uniformity during thin film deposition on extended substrate
SK277865B6 (en) 1989-08-14 1995-05-10 Stanislav Kadlec Method of sputtering of layers and device for realization of this method
US5039376A (en) 1989-09-19 1991-08-13 Stefan Zukotynski Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge
DE4006411C2 (de) 1990-03-01 1997-05-28 Leybold Ag Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US5108574A (en) 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
JPH0565642A (ja) 1991-09-10 1993-03-19 Matsushita Electric Ind Co Ltd 反応性スパツタリング装置
GB9121665D0 (en) 1991-10-11 1991-11-27 Boc Group Plc Sputtering processes and apparatus
EP0537854B1 (de) 1991-10-18 1997-09-10 Koninklijke Philips Electronics N.V. Verfahren zum Herstellen einer Halbeiteranordnung, wobei auf der Oberfläche einer Halbleiterscheibe aus einem Prozessgas eine Materialschicht abgeschieden wird
US5334302A (en) 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
CH687258A5 (de) 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
US5403458A (en) 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use
US5616225A (en) 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
DE19513691A1 (de) 1995-04-11 1996-10-17 Leybold Ag Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US6116185A (en) * 1996-05-01 2000-09-12 Rietzel; James G. Gas injector for plasma enhanced chemical vapor deposition
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US5897753A (en) 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
US6086962A (en) 1997-07-25 2000-07-11 Diamonex, Incorporated Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
KR20010052797A (ko) 1998-06-12 2001-06-25 조셉 제이. 스위니 가스 분배 시스템
US6153067A (en) 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
US6238526B1 (en) * 1999-02-14 2001-05-29 Advanced Ion Technology, Inc. Ion-beam source with channeling sputterable targets and a method for channeled sputtering
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DE60142320D1 (de) 2000-03-13 2010-07-22 Canon Kk Verfahren zur Herstellung eines Dünnfilms
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US6988463B2 (en) 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
US7166199B2 (en) 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
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Also Published As

Publication number Publication date
EP2062283A2 (de) 2009-05-27
WO2008033724A2 (en) 2008-03-20
US7850828B2 (en) 2010-12-14
EP2062283B1 (de) 2012-05-02
WO2008033724A3 (en) 2008-10-02
US20080067057A1 (en) 2008-03-20

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