ATE557072T1 - Polierpaste zum polieren eines lsi - Google Patents

Polierpaste zum polieren eines lsi

Info

Publication number
ATE557072T1
ATE557072T1 AT99935076T AT99935076T ATE557072T1 AT E557072 T1 ATE557072 T1 AT E557072T1 AT 99935076 T AT99935076 T AT 99935076T AT 99935076 T AT99935076 T AT 99935076T AT E557072 T1 ATE557072 T1 AT E557072T1
Authority
AT
Austria
Prior art keywords
polishing
lsi
material composition
paste
cerium oxide
Prior art date
Application number
AT99935076T
Other languages
English (en)
Inventor
Takanori Kido
Fumio Tsujino
Kagetaka Ichikawa
Nobuo Uotani
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE557072T1 publication Critical patent/ATE557072T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Disintegrating Or Milling (AREA)
AT99935076T 1998-08-05 1999-08-05 Polierpaste zum polieren eines lsi ATE557072T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22199798 1998-08-05
JP37377798A JP3560484B2 (ja) 1998-08-05 1998-12-28 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
PCT/JP1999/004241 WO2000008678A1 (en) 1998-08-05 1999-08-05 Abrasive composition for polishing lsi device

Publications (1)

Publication Number Publication Date
ATE557072T1 true ATE557072T1 (de) 2012-05-15

Family

ID=26524619

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99935076T ATE557072T1 (de) 1998-08-05 1999-08-05 Polierpaste zum polieren eines lsi

Country Status (6)

Country Link
EP (1) EP1130630B1 (de)
JP (1) JP3560484B2 (de)
KR (1) KR100573445B1 (de)
AT (1) ATE557072T1 (de)
TW (1) TW419737B (de)
WO (1) WO2000008678A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
KR100480760B1 (ko) * 2000-10-02 2005-04-07 미쓰이 긴조꾸 고교 가부시키가이샤 세륨계 연마재 및 세륨계 연마재의 제조방법
JP3945745B2 (ja) * 2001-03-09 2007-07-18 三井金属鉱業株式会社 セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法
JP3872307B2 (ja) 2001-03-21 2007-01-24 インターナショナル・ビジネス・マシーンズ・コーポレーション オークション方法、オークションシステムおよびプログラム
JP2003277731A (ja) * 2002-03-26 2003-10-02 Catalysts & Chem Ind Co Ltd 研磨用粒子および研磨材
JP4554142B2 (ja) * 2002-04-30 2010-09-29 日揮触媒化成株式会社 基板洗浄用粒子および該基板洗浄用粒子を含む洗浄材、基材の洗浄方法
DE102005017372A1 (de) * 2005-04-14 2006-10-19 Degussa Ag Wässrige Ceroxiddispersion
KR101103748B1 (ko) * 2005-09-27 2012-01-06 삼성코닝정밀소재 주식회사 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법
SG184772A1 (en) * 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
WO2009077412A2 (en) * 2007-12-14 2009-06-25 Akzo Nobel N.V. Aqueous slurry comprising inorganic oxygen-containing particulates
MY171093A (en) * 2012-02-10 2019-09-25 Basf Se Chemical mechanical polishing (cmp) composition comprising a protein
CN104371550B (zh) * 2013-08-14 2018-02-09 安集微电子（上海）有限公司 一种用于抛光硅材料的化学机械抛光液
CN104371553B (zh) * 2013-08-14 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液以及应用
CN104371552B (zh) * 2013-08-14 2017-09-15 安集微电子（上海）有限公司 含硅有机化合物在延长化学机械抛光液中研磨颗粒稳定性中的应用
CN104275651A (zh) * 2014-09-26 2015-01-14 河南省联合磨料磨具有限公司 一种金刚石抛光膜制备方法
CN109689294B (zh) * 2016-09-16 2022-01-25 霓达杜邦股份有限公司 研磨垫
CN119118139B (zh) * 2024-09-18 2025-09-26 深圳中机新材料有限公司 用于碳化硅衬底抛光的高纯硅溶胶及其制备方法
WO2026078797A1 (ja) * 2024-10-08 2026-04-16 株式会社レゾナック 砥粒、スラリ、研磨方法、及び、部品の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127965A (ja) * 1983-12-09 1985-07-08 Matsushita Electric Ind Co Ltd 研摩用組成物
JP2864451B2 (ja) * 1994-11-07 1999-03-03 三井金属鉱業株式会社 研磨材及び研磨方法
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
JP3462052B2 (ja) * 1996-09-30 2003-11-05 日立化成工業株式会社 酸化セリウム研磨剤および基板の研磨法
WO1998049723A1 (en) 1997-04-30 1998-11-05 Minnesota Mining And Manufacturing Company Method of planarizing the upper surface of a semiconductor wafer

Also Published As

Publication number Publication date
JP3560484B2 (ja) 2004-09-02
KR100573445B1 (ko) 2006-04-26
EP1130630A1 (de) 2001-09-05
JP2000114211A (ja) 2000-04-21
WO2000008678A1 (en) 2000-02-17
EP1130630B1 (de) 2012-05-09
TW419737B (en) 2001-01-21
KR20010053235A (ko) 2001-06-25
EP1130630A4 (de) 2007-01-10

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