ATE557418T1 - Verfahren zum ätzen von merkmalen mit hohem streckungsverhältnis - Google Patents

Verfahren zum ätzen von merkmalen mit hohem streckungsverhältnis

Info

Publication number
ATE557418T1
ATE557418T1 AT02773707T AT02773707T ATE557418T1 AT E557418 T1 ATE557418 T1 AT E557418T1 AT 02773707 T AT02773707 T AT 02773707T AT 02773707 T AT02773707 T AT 02773707T AT E557418 T1 ATE557418 T1 AT E557418T1
Authority
AT
Austria
Prior art keywords
sub
etching high
sif
sicl
extension ratio
Prior art date
Application number
AT02773707T
Other languages
English (en)
Inventor
Aelan Mosden
Sandra Hyland
Minori Kajimoto
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE557418T1 publication Critical patent/ATE557418T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
AT02773707T 2001-10-31 2002-10-31 Verfahren zum ätzen von merkmalen mit hohem streckungsverhältnis ATE557418T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33078801P 2001-10-31 2001-10-31
PCT/US2002/031607 WO2003037497A2 (en) 2001-10-31 2002-10-31 Method of etching high aspect ratio features

Publications (1)

Publication Number Publication Date
ATE557418T1 true ATE557418T1 (de) 2012-05-15

Family

ID=23291333

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02773707T ATE557418T1 (de) 2001-10-31 2002-10-31 Verfahren zum ätzen von merkmalen mit hohem streckungsverhältnis

Country Status (9)

Country Link
US (1) US7226868B2 (de)
EP (1) EP1439900B1 (de)
JP (1) JP2005508078A (de)
KR (1) KR100775175B1 (de)
CN (1) CN100355033C (de)
AT (1) ATE557418T1 (de)
AU (1) AU2002337812A1 (de)
TW (1) TWI296132B (de)
WO (1) WO2003037497A2 (de)

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US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
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US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
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Also Published As

Publication number Publication date
CN100355033C (zh) 2007-12-12
US7226868B2 (en) 2007-06-05
TWI296132B (en) 2008-04-21
EP1439900A2 (de) 2004-07-28
KR20050042018A (ko) 2005-05-04
WO2003037497A2 (en) 2003-05-08
WO2003037497A3 (en) 2004-04-15
CN1592954A (zh) 2005-03-09
EP1439900B1 (de) 2012-05-09
AU2002337812A1 (en) 2003-05-12
EP1439900A4 (de) 2009-05-27
TW200300276A (en) 2003-05-16
US20040221797A1 (en) 2004-11-11
KR100775175B1 (ko) 2007-11-12
JP2005508078A (ja) 2005-03-24

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