ATE557424T1 - Verfahren zur verbesserung der zuverlässigkeit eines p-kanal-halbleiterbauelements und damit hergestelltes p-kanal-halbleiterbauelement - Google Patents

Verfahren zur verbesserung der zuverlässigkeit eines p-kanal-halbleiterbauelements und damit hergestelltes p-kanal-halbleiterbauelement

Info

Publication number
ATE557424T1
ATE557424T1 AT10186985T AT10186985T ATE557424T1 AT E557424 T1 ATE557424 T1 AT E557424T1 AT 10186985 T AT10186985 T AT 10186985T AT 10186985 T AT10186985 T AT 10186985T AT E557424 T1 ATE557424 T1 AT E557424T1
Authority
AT
Austria
Prior art keywords
layer
semiconductor component
channel semiconductor
channel
gate dielectric
Prior art date
Application number
AT10186985T
Other languages
English (en)
Inventor
Ben Kaczer
Jacopo Franco
Original Assignee
Imec
Univ Leuven Kath
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec, Univ Leuven Kath filed Critical Imec
Application granted granted Critical
Publication of ATE557424T1 publication Critical patent/ATE557424T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
AT10186985T 2009-10-09 2010-10-08 Verfahren zur verbesserung der zuverlässigkeit eines p-kanal-halbleiterbauelements und damit hergestelltes p-kanal-halbleiterbauelement ATE557424T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25040909P 2009-10-09 2009-10-09

Publications (1)

Publication Number Publication Date
ATE557424T1 true ATE557424T1 (de) 2012-05-15

Family

ID=43430712

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10186985T ATE557424T1 (de) 2009-10-09 2010-10-08 Verfahren zur verbesserung der zuverlässigkeit eines p-kanal-halbleiterbauelements und damit hergestelltes p-kanal-halbleiterbauelement

Country Status (4)

Country Link
US (1) US8062962B2 (de)
EP (1) EP2309543B1 (de)
JP (1) JP2011082527A (de)
AT (1) ATE557424T1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102122464B1 (ko) 2013-11-29 2020-06-12 삼성전자 주식회사 셀프 리프레쉬 정보를 이용하여 부 바이어스 온도 불안정 현상을 방지하는 방법
CN106847918B (zh) * 2015-12-04 2022-01-07 Imec 非营利协会 Ge场效应晶体管(FET)和制造方法
KR102756342B1 (ko) * 2022-05-03 2025-01-16 성균관대학교산학협력단 접합 구조 소자, 이의 제조 방법 및 이를 포함하는 컴퓨팅 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287913A (ja) * 2006-04-17 2007-11-01 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ及びその製造方法

Also Published As

Publication number Publication date
US20110084309A1 (en) 2011-04-14
EP2309543A1 (de) 2011-04-13
US8062962B2 (en) 2011-11-22
EP2309543B1 (de) 2012-05-09
JP2011082527A (ja) 2011-04-21

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