ATE67530T1 - Metallorganisches gasphasen-epitaxiewachstum von ii-vi-halbleitermaterialien. - Google Patents

Metallorganisches gasphasen-epitaxiewachstum von ii-vi-halbleitermaterialien.

Info

Publication number
ATE67530T1
ATE67530T1 AT87104410T AT87104410T ATE67530T1 AT E67530 T1 ATE67530 T1 AT E67530T1 AT 87104410 T AT87104410 T AT 87104410T AT 87104410 T AT87104410 T AT 87104410T AT E67530 T1 ATE67530 T1 AT E67530T1
Authority
AT
Austria
Prior art keywords
group
gas phase
semiconductor materials
organic metal
phase epitaxy
Prior art date
Application number
AT87104410T
Other languages
English (en)
Inventor
Donald Valentine Jr
Duncan William Brown
Original Assignee
American Cyanamid Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Cyanamid Co filed Critical American Cyanamid Co
Application granted granted Critical
Publication of ATE67530T1 publication Critical patent/ATE67530T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
AT87104410T 1986-04-02 1987-03-25 Metallorganisches gasphasen-epitaxiewachstum von ii-vi-halbleitermaterialien. ATE67530T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/847,370 US4920068A (en) 1986-04-02 1986-04-02 Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
EP87104410A EP0240844B1 (de) 1986-04-02 1987-03-25 Metallorganisches Gasphasen-Epitaxiewachstum von II-VI-Halbleitermaterialien

Publications (1)

Publication Number Publication Date
ATE67530T1 true ATE67530T1 (de) 1991-10-15

Family

ID=25300449

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87104410T ATE67530T1 (de) 1986-04-02 1987-03-25 Metallorganisches gasphasen-epitaxiewachstum von ii-vi-halbleitermaterialien.

Country Status (14)

Country Link
US (1) US4920068A (de)
EP (1) EP0240844B1 (de)
JP (1) JPH07118457B2 (de)
KR (1) KR870010621A (de)
AT (1) ATE67530T1 (de)
CA (1) CA1287555C (de)
DE (1) DE3773031D1 (de)
ES (1) ES2025080B3 (de)
GR (1) GR3002742T3 (de)
HK (1) HK36392A (de)
IE (1) IE59894B1 (de)
IL (1) IL82033A0 (de)
MX (1) MX166921B (de)
SG (1) SG21992G (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828938A (en) * 1986-04-11 1989-05-09 Hughes Aircraft Company Method for depositing materials containing tellurium and product
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US5194983A (en) * 1986-11-27 1993-03-16 Centre National De La Recherche Scientifique (C.N.R.S.) Superlattice optical monitor
US5312983A (en) * 1991-02-15 1994-05-17 Advanced Technology Materials, Inc. Organometallic tellurium compounds useful in chemical vapor deposition processes
US5382542A (en) * 1993-07-26 1995-01-17 Hughes Aircraft Company Method of growth of II-VI materials on silicon using As passivation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
US3218203A (en) * 1961-10-09 1965-11-16 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3224912A (en) * 1962-07-13 1965-12-21 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
GB2078695B (en) * 1980-05-27 1984-06-20 Secr Defence Cadmium mercury telluride deposition
US4439267A (en) * 1982-09-29 1984-03-27 The United States Of America As Represented By The Secretary Of The Army Vapor-phase method for growing mercury cadmium telluride
DE3379059D1 (en) * 1982-10-19 1989-03-02 Secr Defence Brit Organometallic chemical vapour deposition of films
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Also Published As

Publication number Publication date
SG21992G (en) 1992-04-16
JPH07118457B2 (ja) 1995-12-18
IL82033A0 (en) 1987-10-20
KR870010621A (ko) 1987-11-30
ES2025080B3 (es) 1992-03-16
EP0240844A1 (de) 1987-10-14
GR3002742T3 (en) 1993-01-25
IE59894B1 (en) 1994-04-20
MX166921B (es) 1993-02-15
EP0240844B1 (de) 1991-09-18
IE870840L (en) 1987-10-02
HK36392A (en) 1992-05-29
JPS62282438A (ja) 1987-12-08
CA1287555C (en) 1991-08-13
DE3773031D1 (de) 1991-10-24
US4920068A (en) 1990-04-24

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee