ATE73869T1 - Verfahren und vorrichtung zum selektiven chemischen aufdampfen. - Google Patents

Verfahren und vorrichtung zum selektiven chemischen aufdampfen.

Info

Publication number
ATE73869T1
ATE73869T1 AT86903102T AT86903102T ATE73869T1 AT E73869 T1 ATE73869 T1 AT E73869T1 AT 86903102 T AT86903102 T AT 86903102T AT 86903102 T AT86903102 T AT 86903102T AT E73869 T1 ATE73869 T1 AT E73869T1
Authority
AT
Austria
Prior art keywords
vapor deposition
chemical vapor
selective chemical
substrate
metal
Prior art date
Application number
AT86903102T
Other languages
English (en)
Inventor
Ronald Harvey Wilson
Robert Winston Stoll
Michael Anthony Calacone
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/733,445 external-priority patent/US4653428A/en
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE73869T1 publication Critical patent/ATE73869T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Electrodes Of Semiconductors (AREA)
AT86903102T 1985-05-10 1986-05-09 Verfahren und vorrichtung zum selektiven chemischen aufdampfen. ATE73869T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/733,445 US4653428A (en) 1985-05-10 1985-05-10 Selective chemical vapor deposition apparatus
US81389085A 1985-12-27 1985-12-27
EP86903102A EP0223787B1 (de) 1985-05-10 1986-05-09 Verfahren und vorrichtung zum selektiven chemischen aufdampfen
PCT/US1986/000994 WO1986006755A1 (en) 1985-05-10 1986-05-09 Selective chemical vapor deposition method and apparatus

Publications (1)

Publication Number Publication Date
ATE73869T1 true ATE73869T1 (de) 1992-04-15

Family

ID=27112577

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86903102T ATE73869T1 (de) 1985-05-10 1986-05-09 Verfahren und vorrichtung zum selektiven chemischen aufdampfen.

Country Status (4)

Country Link
EP (1) EP0223787B1 (de)
AT (1) ATE73869T1 (de)
DE (1) DE3684414D1 (de)
WO (1) WO1986006755A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252667B1 (de) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Verfahren zum Abscheiden aus der Gasphase
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
JP2798250B2 (ja) * 1987-06-01 1998-09-17 ゼネラル・エレクトリック・カンパニイ アルミニウム物質との低抵抗接点形成方法，およびアルミニウムとの低抵抗接点
GB2216903A (en) * 1988-04-06 1989-10-18 Ici Plc Transparent conductive zinc oxide layer
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
DE69025252T2 (de) * 1989-09-26 1996-07-04 Canon Kk Verfahren zum Herstellen einer abgeschiedenen Schicht und Verfahren zum Herstellen einer Halbleitervorrichtung
US5250323A (en) * 1989-10-30 1993-10-05 Kabushiki Kaisha Toshiba Chemical vapor growth apparatus having an exhaust device including trap
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US6156645A (en) * 1996-10-25 2000-12-05 Cypress Semiconductor Corporation Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
US4550684A (en) * 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating

Also Published As

Publication number Publication date
WO1986006755A1 (en) 1986-11-20
EP0223787B1 (de) 1992-03-18
DE3684414D1 (de) 1992-04-23
EP0223787A1 (de) 1987-06-03

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Legal Events

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