ATE80675T1 - METHOD AND DEVICE FOR ETCHING SUBSTRATES WITH A MAGNETIC FIELD ASSISTED LOW PRESSURE DISCHARGE. - Google Patents

METHOD AND DEVICE FOR ETCHING SUBSTRATES WITH A MAGNETIC FIELD ASSISTED LOW PRESSURE DISCHARGE.

Info

Publication number
ATE80675T1
ATE80675T1 AT89119683T AT89119683T ATE80675T1 AT E80675 T1 ATE80675 T1 AT E80675T1 AT 89119683 T AT89119683 T AT 89119683T AT 89119683 T AT89119683 T AT 89119683T AT E80675 T1 ATE80675 T1 AT E80675T1
Authority
AT
Austria
Prior art keywords
substrates
magnetic field
etching
anode
gaps
Prior art date
Application number
AT89119683T
Other languages
German (de)
Inventor
Dieter Dipl-Ing Hofmann
Bernd Dipl-Ing Hensel
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Ag filed Critical Leybold Ag
Application granted granted Critical
Publication of ATE80675T1 publication Critical patent/ATE80675T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An etching method whereby a sufficiently high etching rate is attained, in a uniform surface treatment that is very gentle on projecting edges of the substrates. Also the substrates are held at or brought to a sufficiently high temperature by the etching process. The method for etching substrates with a magnetic-field supported low-pressure discharge is characterized in that the magnetic field is decoupled from the substrates such that the magnetic field strength at the substrates is less than 6000 A/m. In the space between the substrates and the magnet system at least one electron emitter is disposed at a location at which a magnetic field strength is present that is greater than the field strength at the substrates but equal to or less than 12,000 A/m. On the side of the substrates facing away from the at least one electron emitter, at least one anode is disposed with an anode potential of +10 to +250 V with respect to ground. An etching potential between -100 V and -1000 V with respect to ground is applied to the substrates. The ratio of the gaps between the substrates and the surfaces of the substrates projected onto a projection plane carried through the gaps amounts to at least 0.1. The potential difference between the at least one emitter and the at least one anode is selected so high that an electron current (primary and secondary electrons) flows through the substrate gaps to the anode.
AT89119683T 1988-11-04 1989-10-24 METHOD AND DEVICE FOR ETCHING SUBSTRATES WITH A MAGNETIC FIELD ASSISTED LOW PRESSURE DISCHARGE. ATE80675T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3837487A DE3837487A1 (en) 1988-11-04 1988-11-04 METHOD AND DEVICE FOR ETCHING SUBSTRATES WITH A MAGNETIC FIELD SUPPORTED LOW PRESSURE DISCHARGE
EP89119683A EP0371252B1 (en) 1988-11-04 1989-10-24 Process and apparatus for etching substrates with a low-pressure discharge assisted by a magnetic field

Publications (1)

Publication Number Publication Date
ATE80675T1 true ATE80675T1 (en) 1992-10-15

Family

ID=6366508

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89119683T ATE80675T1 (en) 1988-11-04 1989-10-24 METHOD AND DEVICE FOR ETCHING SUBSTRATES WITH A MAGNETIC FIELD ASSISTED LOW PRESSURE DISCHARGE.

Country Status (6)

Country Link
US (1) US4911784A (en)
EP (1) EP0371252B1 (en)
JP (1) JPH0328384A (en)
AT (1) ATE80675T1 (en)
CA (1) CA2002322A1 (en)
DE (2) DE3837487A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690796A (en) * 1992-12-23 1997-11-25 Balzers Aktiengesellschaft Method and apparatus for layer depositions
US5601687A (en) * 1995-09-11 1997-02-11 The United States Of America As Represented By The Secretary Of The Air Force Mask design
DE19602030B4 (en) * 1996-01-20 2007-08-02 Günther & Co. GmbH drill
GB9916558D0 (en) * 1999-07-14 1999-09-15 Dormer Tools Sheffield Ltd Method and means for drill production
JP4069112B2 (en) * 2004-11-24 2008-04-02 大和製衡株式会社 Combination scale
US8721901B2 (en) 2007-10-05 2014-05-13 Micron Technology, Inc. Methods of processing substrates and methods of forming conductive connections to substrates
US8919279B1 (en) * 2010-09-30 2014-12-30 WD Media, LLC Processing system having magnet keeper
BR112021015259A2 (en) * 2019-04-11 2021-10-26 Tdw Delaware, Inc. PIPE TOOL WITH COMPOSITE MAGNETIC FIELD FOR LINE INSPECTION
CN114855118B (en) * 2022-06-15 2025-07-01 沈阳爱科斯科技有限公司 Vacuum coating system
CN119243259A (en) * 2024-12-05 2025-01-03 洛阳云源智能科技有限公司 Aluminum electrolytic cell lining structure and use method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1029941B (en) * 1955-07-13 1958-05-14 Siemens Ag Process for the production of monocrystalline semiconductor layers
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
DE3107914A1 (en) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln METHOD AND DEVICE FOR COATING MOLDED PARTS BY CATODENSIONING
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
DE3442208C3 (en) * 1984-11-19 1998-06-10 Leybold Ag Method and device for producing hard carbon layers
DE3503105A1 (en) * 1985-01-30 1986-07-31 Leybold-Heraeus GmbH, 5000 Köln METHOD FOR COATING MACHINE PARTS AND TOOLS WITH CARBIDE MATERIAL AND MACHINE PARTS AND TOOLS PRODUCED BY THE METHOD
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
FR2613381B1 (en) * 1987-04-01 1989-06-23 Cit Alcatel METHOD OF ATTACKING A SURFACE OF A ROOM IN INDIUM PHOSPHIDE

Also Published As

Publication number Publication date
US4911784A (en) 1990-03-27
EP0371252A1 (en) 1990-06-06
DE58902295D1 (en) 1992-10-22
EP0371252B1 (en) 1992-09-16
CA2002322A1 (en) 1990-05-04
JPH0328384A (en) 1991-02-06
DE3837487A1 (en) 1990-05-10

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