ATE81565T1 - FIELD EMISSION DEVICE. - Google Patents
FIELD EMISSION DEVICE.Info
- Publication number
- ATE81565T1 ATE81565T1 AT87303550T AT87303550T ATE81565T1 AT E81565 T1 ATE81565 T1 AT E81565T1 AT 87303550 T AT87303550 T AT 87303550T AT 87303550 T AT87303550 T AT 87303550T AT E81565 T1 ATE81565 T1 AT E81565T1
- Authority
- AT
- Austria
- Prior art keywords
- insulative
- electron
- emission
- particles
- devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Powder Metallurgy (AREA)
Abstract
A device is disclosed which produces high current, low noise, low lateral energy, stochastic electron emission from a multiplicity of insulative particles subjected to a field. The insulative particles are in and of a surface thickness comprised of a random mixture of insulative and conductive particles in ohmic contact. Emission is achieved at applied potentials of about 5 volts which produce a field sufficient to emit electron currents of nanoamperes to milliamperes. Single devices or arrays of devices may be batch fabricated. each device has an integral, implicitly self-aligned electron optic system comprising means for modulating, focusing and deflecting the formed current beam, and means shielding the device from ambient magnetic fields.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP87303550A EP0288616B1 (en) | 1987-04-22 | 1987-04-22 | Field emission device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE81565T1 true ATE81565T1 (en) | 1992-10-15 |
Family
ID=8197873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT87303550T ATE81565T1 (en) | 1987-04-22 | 1987-04-22 | FIELD EMISSION DEVICE. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0288616B1 (en) |
| AT (1) | ATE81565T1 (en) |
| DE (1) | DE3782247D1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332627A (en) * | 1990-10-30 | 1994-07-26 | Sony Corporation | Field emission type emitter and a method of manufacturing thereof |
| CN1103110C (en) * | 1995-08-04 | 2003-03-12 | 可印刷发射体有限公司 | Field electron emission materials and devices |
| EP0827176A3 (en) * | 1996-08-16 | 2000-03-08 | Tektronix, Inc. | Sputter-resistant conductive coatings with enhanced emission of electrons for cathode electrodes in DC plasma addressing structure |
| EP1225613A4 (en) * | 1999-10-12 | 2007-10-17 | Matsushita Electric Industrial Co Ltd | ELECTRON EMISSIONING DEVICE AND ELECTRON SOURCE EQUIPPED THEREWITH, FIELD EMISSION IMAGE INDICATOR, FLUORESCENT LAMP AND THEIR MANUFACTURING METHOD |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1226627A (en) * | 1967-08-02 | 1971-03-31 | ||
| JPS5436828B2 (en) * | 1974-08-16 | 1979-11-12 | ||
| US4213192A (en) | 1979-01-15 | 1980-07-15 | Christensen Alton O Sr | Electron beam accessed read-write-erase random access memory |
| US4663559A (en) * | 1982-09-17 | 1987-05-05 | Christensen Alton O | Field emission device |
| US4498952A (en) | 1982-09-17 | 1985-02-12 | Condesin, Inc. | Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns |
-
1987
- 1987-04-22 DE DE8787303550T patent/DE3782247D1/en not_active Expired - Lifetime
- 1987-04-22 EP EP87303550A patent/EP0288616B1/en not_active Expired
- 1987-04-22 AT AT87303550T patent/ATE81565T1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0288616A1 (en) | 1988-11-02 |
| DE3782247D1 (en) | 1992-11-19 |
| EP0288616B1 (en) | 1992-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |