ATE87399T1 - Schaltkreis fuer ein photoempfindliches pixel mit einem belichteten blockierglied. - Google Patents

Schaltkreis fuer ein photoempfindliches pixel mit einem belichteten blockierglied.

Info

Publication number
ATE87399T1
ATE87399T1 AT87307461T AT87307461T ATE87399T1 AT E87399 T1 ATE87399 T1 AT E87399T1 AT 87307461 T AT87307461 T AT 87307461T AT 87307461 T AT87307461 T AT 87307461T AT E87399 T1 ATE87399 T1 AT E87399T1
Authority
AT
Austria
Prior art keywords
circuit
photosensitive pixel
exposure blocking
blocking element
meter
Prior art date
Application number
AT87307461T
Other languages
English (en)
Inventor
Koichi Kitamura
Louis D Swatz
Clive Catchpole
Zvi Yaniv
Original Assignee
Optical Imaging Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Imaging Syst filed Critical Optical Imaging Syst
Application granted granted Critical
Publication of ATE87399T1 publication Critical patent/ATE87399T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/40—Picture signal circuits
    • H04N1/40056—Circuits for driving or energising particular reading heads or original illumination means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/452—Input structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrophotography Configuration And Component (AREA)
AT87307461T 1986-09-16 1987-08-24 Schaltkreis fuer ein photoempfindliches pixel mit einem belichteten blockierglied. ATE87399T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/907,926 US4714836A (en) 1986-09-16 1986-09-16 Photosensitive pixel with exposed blocking element
EP87307461A EP0260824B1 (de) 1986-09-16 1987-08-24 Schaltkreis für ein photoempfindliches Pixel mit einem belichteten Blockierglied

Publications (1)

Publication Number Publication Date
ATE87399T1 true ATE87399T1 (de) 1993-04-15

Family

ID=25424863

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87307461T ATE87399T1 (de) 1986-09-16 1987-08-24 Schaltkreis fuer ein photoempfindliches pixel mit einem belichteten blockierglied.

Country Status (8)

Country Link
US (1) US4714836A (de)
EP (1) EP0260824B1 (de)
JP (1) JPS6386973A (de)
AT (1) ATE87399T1 (de)
CA (1) CA1325056C (de)
DE (1) DE3784991T2 (de)
ES (1) ES2040256T3 (de)
IL (1) IL83893A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910412A (en) * 1987-04-17 1990-03-20 Stemcor Corporation Light biased photoresponsive array
FR2626128B1 (fr) * 1988-01-15 1990-05-04 Thomson Csf Matrice photosensible a deux diodes et une capacite par point, sans remise a niveau optique
DE3816660C1 (en) * 1988-05-17 1989-09-07 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Sensor, especially photodetector arrangement
US5335092A (en) * 1989-04-06 1994-08-02 Nippon Steel Corporation Contact type image sensor
JPH03209767A (ja) * 1990-01-11 1991-09-12 Fuji Xerox Co Ltd イメージセンサ
US5216274A (en) * 1991-01-11 1993-06-01 Fuji Xerox Co., Ltd. Image sensor
EP0515849A3 (en) * 1991-04-27 1993-05-19 Kanegafuchi Chemical Industry Co., Ltd. Image sensor
US5254848A (en) * 1991-06-21 1993-10-19 Fuji Xerox Co., Ltd. Image sensor and method of reading data out of the same having load capacitors being respectively continuously connected to common signal lines
JPH0522516A (ja) * 1991-07-17 1993-01-29 Fuji Xerox Co Ltd イメージセンサ
GB9209734D0 (en) * 1992-05-06 1992-06-17 Philips Electronics Uk Ltd An image sensor
EP0601200A4 (de) * 1992-06-15 1994-10-26 Kanegafuchi Chemical Ind Halbleiteranordnung.
WO1993026046A1 (fr) * 1992-06-15 1993-12-23 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Dispositif semi-conducteur
US5774180A (en) * 1992-12-04 1998-06-30 Fuji Xerox Co., Ltd. Image sensor capable of producing an image signal free from an afterimage
EP0619676A3 (de) * 1993-04-09 1995-05-24 Kanegafuchi Chemical Ind Bildleseverfahren und -vorrichtung.
EP1786027A3 (de) * 2005-11-14 2009-03-04 Schott AG Plasma-Àtzen von konischen Strukturen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369372A (en) * 1979-06-18 1983-01-18 Canon Kabushiki Kaisha Photo electro transducer device
US4500924A (en) * 1979-11-16 1985-02-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus
EP0163956A3 (de) * 1984-05-04 1988-04-06 Energy Conversion Devices, Inc. Integrierte strahlungsempfindliche Matrix
US4675739A (en) * 1984-05-04 1987-06-23 Energy Conversion Devices, Inc. Integrated radiation sensing array

Also Published As

Publication number Publication date
ES2040256T3 (es) 1993-10-16
JPS6386973A (ja) 1988-04-18
US4714836A (en) 1987-12-22
IL83893A0 (en) 1988-02-29
IL83893A (en) 1991-03-10
EP0260824B1 (de) 1993-03-24
EP0260824A3 (en) 1989-03-15
DE3784991D1 (de) 1993-04-29
DE3784991T2 (de) 1993-10-14
CA1325056C (en) 1993-12-07
EP0260824A2 (de) 1988-03-23

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee