ATE898T1 - BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE. - Google Patents

BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE.

Info

Publication number
ATE898T1
ATE898T1 AT80103474T AT80103474T ATE898T1 AT E898 T1 ATE898 T1 AT E898T1 AT 80103474 T AT80103474 T AT 80103474T AT 80103474 T AT80103474 T AT 80103474T AT E898 T1 ATE898 T1 AT E898T1
Authority
AT
Austria
Prior art keywords
discs
plates
chips
doped
bipolar transistor
Prior art date
Application number
AT80103474T
Other languages
German (de)
Inventor
Reinhard Dr. Dahlberg
Original Assignee
Licentia Patent-Verwaltungs-Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent-Verwaltungs-Gmbh filed Critical Licentia Patent-Verwaltungs-Gmbh
Application granted granted Critical
Publication of ATE898T1 publication Critical patent/ATE898T1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A bipolar transistor comprises a pair of monocrystalline semiconductor discs, plates or chips, one n-doped and one p-doped, one of the discs, plates or chips providing the base region and having an oppositely doped emitter region and a base/emitter p-n junction, and both of the discs, plates or chips having a structure of parallel ridges which face, cross and touch when the discs plates or chips are assembled together under mechanical pressure, the surfaces of the side edges of the ridges on the other of the discs being highly doped with the conductivity type of the base region whereby the contact surfaces between the ridges form parallel connected base/collector p-n junctions as a result of plastic deformation of the semiconductor material. The invention also includes a method of making such a bipolar transistor.
AT80103474T 1979-07-03 1980-06-21 BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE. ATE898T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2926785A DE2926785C2 (en) 1979-07-03 1979-07-03 Bipolar transistor and method for its manufacture
EP80103474A EP0022204B1 (en) 1979-07-03 1980-06-21 Bipolar transistor and process for its production

Publications (1)

Publication Number Publication Date
ATE898T1 true ATE898T1 (en) 1982-05-15

Family

ID=6074781

Family Applications (1)

Application Number Title Priority Date Filing Date
AT80103474T ATE898T1 (en) 1979-07-03 1980-06-21 BIPOLAR TRANSISTOR AND PROCESS FOR ITS MANUFACTURE.

Country Status (5)

Country Link
US (1) US4451843A (en)
EP (1) EP0022204B1 (en)
JP (1) JPS5613764A (en)
AT (1) ATE898T1 (en)
DE (1) DE2926785C2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549196A (en) * 1982-08-04 1985-10-22 Westinghouse Electric Corp. Lateral bipolar transistor
US5273918A (en) * 1984-01-26 1993-12-28 Temic Telefunken Microelectronic Gmbh Process for the manufacture of a junction field effect transistor
DE3402517A1 (en) * 1984-01-26 1985-08-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for fabricating a junction field effect transistor
JPH0770474B2 (en) * 1985-02-08 1995-07-31 株式会社東芝 Method for manufacturing compound semiconductor device
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
WO1999025024A1 (en) * 1997-11-10 1999-05-20 Kendall Don L Quantum ridges and tips
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US6762094B2 (en) * 2002-09-27 2004-07-13 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making
US20070034909A1 (en) * 2003-09-22 2007-02-15 James Stasiak Nanometer-scale semiconductor devices and method of making

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2618690A (en) * 1949-10-06 1952-11-18 Otmar M Stuetzer Transconductor employing line type field controlled semiconductor
NL82014C (en) * 1949-11-30
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2641638A (en) * 1952-03-27 1953-06-09 Rca Corp Line-contact transistor
US2663830A (en) * 1952-10-22 1953-12-22 Bell Telephone Labor Inc Semiconductor signal translating device
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
GB1053069A (en) * 1963-06-28
DE1514727A1 (en) * 1965-09-30 1969-06-19 Schaefer Dipl Phys Siegfried Production of pn junctions by plastic deformation of semiconductors
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices
DE1916555A1 (en) * 1969-04-01 1971-03-04 Semikron Gleichrichterbau Semiconductor rectifier arrangement and method for its production
GB1297046A (en) * 1969-08-25 1972-11-22
DE2244062A1 (en) * 1972-09-08 1974-03-28 Licentia Gmbh OHM SHEAR CONNECTOR FOR A SILICON SEMI-CONDUCTOR COMPONENT
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2547262C3 (en) * 1975-10-22 1981-07-16 Reinhard Dr. 7101 Flein Dahlberg Thermoelectric arrangement with large temperature gradients and use
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
DE2837394A1 (en) * 1978-08-26 1980-03-20 Semikron Gleichrichterbau Semiconductor bridge rectifier - using two substrates, each contg. three rectifier elements, where the two direct current output leads are located on different substrates

Also Published As

Publication number Publication date
DE2926785A1 (en) 1981-01-15
US4451843A (en) 1984-05-29
EP0022204A1 (en) 1981-01-14
DE2926785C2 (en) 1985-12-12
JPS5613764A (en) 1981-02-10
EP0022204B1 (en) 1982-04-21

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee