ATE90167T1 - Verfahren zum niederschlagen von rauhem zinnoxid. - Google Patents

Verfahren zum niederschlagen von rauhem zinnoxid.

Info

Publication number: ATE90167T1
Authority: AT; Austria
Prior art keywords: tin oxide; film; substrate; depositioning; tin
Prior art date: 1987-08-31

Application number

AT88113976T

Other languages

English (en)

Inventor

James G O'dowd

Anthony W Catalano

Charles M Fortmann

Ora Jean Lee

Original Assignee

Solarex Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-08-31

Filing date

1988-08-26

Publication date

1993-06-15

1988-08-26 Application filed by Solarex Corp filed Critical Solarex Corp

1993-06-15 Application granted granted Critical

1993-06-15 Publication of ATE90167T1 publication Critical patent/ATE90167T1/de

Links

229910001887 tin oxide Inorganic materials 0.000 title abstract 6
238000000034 method Methods 0.000 title abstract 4
DDSPUNTXKUFWTM-UHFFFAOYSA-N oxygen(2-);tin(4+) Chemical compound [O-2].[O-2].[Sn+4] DDSPUNTXKUFWTM-UHFFFAOYSA-N 0.000 title 1
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 5
238000000151 deposition Methods 0.000 abstract 3
239000000758 substrate Substances 0.000 abstract 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
238000005229 chemical vapour deposition Methods 0.000 abstract 2
239000000203 mixture Substances 0.000 abstract 2
239000000376 reactant Substances 0.000 abstract 2
HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 abstract 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
230000008021 deposition Effects 0.000 abstract 1
238000005137 deposition process Methods 0.000 abstract 1
235000012239 silicon dioxide Nutrition 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
239000005361 soda-lime glass Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Inorganic Chemistry (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Geochemistry & Mineralogy (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical Vapour Deposition (AREA)
Surface Treatment Of Glass (AREA)
Catalysts (AREA)
Photovoltaic Devices (AREA)
Manufacturing Of Electric Cables (AREA)

AT88113976T 1987-08-31 1988-08-26 Verfahren zum niederschlagen von rauhem zinnoxid. ATE90167T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US07/090,851 US4880664A (en)	1987-08-31	1987-08-31	Method of depositing textured tin oxide
EP88113976A EP0305928B1 (de)	1987-08-31	1988-08-26	Verfahren zum Niederschlagen von rauhem Zinnoxid

Publications (1)

Publication Number	Publication Date
ATE90167T1 true ATE90167T1 (de)	1993-06-15

Family

ID=22224628

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT88113976T ATE90167T1 (de)	1987-08-31	1988-08-26	Verfahren zum niederschlagen von rauhem zinnoxid.

Country Status (6)

Country	Link
US (1)	US4880664A (de)
EP (1)	EP0305928B1 (de)
JP (1)	JPH01145350A (de)
AT (1)	ATE90167T1 (de)
CA (1)	CA1333461C (de)
DE (1)	DE3881455T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02258691A (ja) *	1989-03-31	1990-10-19	Agency Of Ind Science & Technol	透明導電膜の製造方法
US5147519A (en) *	1990-07-27	1992-09-15	Motorola, Inc.	Method of manufacturing elastomers containing fine line conductors
JPH0456351U (de) *	1990-09-20	1992-05-14
US5393563A (en) *	1991-10-29	1995-02-28	Ellis, Jr.; Frank B.	Formation of tin oxide films on glass substrates
JP3163687B2 (ja) *	1991-11-12	2001-05-08	富士通株式会社	化学気相成長装置及び化学気相成長膜形成方法
BR9205672A (pt) *	1991-12-26	1994-08-02	Atochem North America Elf	Composição gasosa
JP2974485B2 (ja) *	1992-02-05	1999-11-10	キヤノン株式会社	光起電力素子の製造法
US5230746A (en) *	1992-03-03	1993-07-27	Amoco Corporation	Photovoltaic device having enhanced rear reflecting contact
US5496583A (en) *	1994-08-29	1996-03-05	Amoco/Enron Solar	Hydrogen fluoride dopant source in the preparation of conductive coated substrate
GB9515198D0 (en) *	1995-07-25	1995-09-20	Pilkington Plc	A method of coating glass
US6077722A (en) *	1998-07-14	2000-06-20	Bp Solarex	Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
JP3227449B2 (ja)	1999-05-28	2001-11-12	日本板硝子株式会社	光電変換装置用基板とその製造方法、およびこれを用いた光電変換装置
US8093490B2 (en) *	2001-12-03	2012-01-10	Nippon Sheet Glass Company, Limited	Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate
NL1019911C2 (nl) *	2002-02-06	2003-08-07	Tno	Werkwijze voor het produceren van een tinoxide deklaag.
FR2897745A1 (fr) *	2006-02-22	2007-08-24	Saint Gobain	Dispositif electroluminescent et utilisation d'une couche electroconductrice transparente dans un dispostif electroluminescent
KR20080110756A (ko) *	2006-02-22	2008-12-19	쌩-고벵 글래스 프랑스	유기 발광 장치 및 유기 발광 장치의 투명 전기 전도층의 용도
WO2009082141A2 (en) *	2007-12-21	2009-07-02	Jusung Engineering Co., Ltd.	Thin film type solar cell and method for manufacturing the same
TWI478359B (zh) *	2008-09-05	2015-03-21	半導體能源研究所股份有限公司	光電轉換裝置
US20110048530A1 (en) *	2009-08-31	2011-03-03	Sasha Marjanovic	Surface nucleated glasses for photovoltaic devices
EP2336388B1 (de)	2009-12-18	2012-08-08	centrotherm photovoltaics AG	Verfahren zum Auftragen einer Zinnoxidschicht auf ein Substrat
KR101933727B1 (ko) *	2013-08-26	2018-12-31	연세대학교 산학협력단	원자층 증착법으로 산화물 박막의 일부를 할로겐 원소로 도핑할 수 있는 할로겐 도핑 소스, 상기 할로겐 도핑 소스의 제조 방법, 상기 할로겐 원소 소스를 이용하여 원자층 증착법으로 산화물 박막의 일부를 할로겐으로 도핑하는 방법, 및 상기 방법을 이용하여 형성된 할로겐 원소가 도핑된 산화물 박막
US12557607B2 (en) *	2023-01-18	2026-02-17	Taiwan Semiconductor Manufacturing Company, Ltd.	Photoresist and formation method thereof
US12512319B2 (en) *	2023-01-18	2025-12-30	Taiwan Semiconductor Manufacturing Company, Ltd.	Photoresist and formation method thereof

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2692836A (en) *	1951-06-14	1954-10-26	Libbey Owens Ford Glass Co	Method of increasing the electrical conductivity of tin oxide films
US2898496A (en) *	1953-11-20	1959-08-04	Sr Leland B Clark	Electrically conductive films and method for producing same
US3306768A (en) *	1964-01-08	1967-02-28	Motorola Inc	Method of forming thin oxide films
BE879189A (fr) *	1978-10-19	1980-04-04	Bfg Glassgroup	Procede de formation d'un revetement d'oxyde d'etain sur un support de verre chaud et produits ainsi obtenus
US4235945A (en) *	1978-12-01	1980-11-25	Ppg Industries, Inc.	High resistivity electroconductive tin oxide films
US4325987A (en) *	1979-07-31	1982-04-20	Societa Italiana Vetro-Siv-S.P.A.	Process for the production of an electrically conducting article
US4344817A (en) *	1980-09-15	1982-08-17	Photon Power, Inc.	Process for forming tin oxide conductive pattern
CH640571A5 (fr) *	1981-03-06	1984-01-13	Battelle Memorial Institute	Procede et dispositif pour deposer sur un substrat une couche de matiere minerale.
US4377613A (en) *	1981-09-14	1983-03-22	Gordon Roy G	Non-iridescent glass structures
US4532537A (en) *	1982-09-27	1985-07-30	Rca Corporation	Photodetector with enhanced light absorption
GB2139421B (en) *	1983-03-07	1987-09-23	Semiconductor Energy Lab	Semiconductor photoelectric conversion device and method of manufacture
US4612217A (en) *	1983-08-01	1986-09-16	Gordon Roy G	Coating process for making non-iridescent glass structure
US4696837A (en) *	1985-06-25	1987-09-29	M&T Chemicals Inc.	Chemical vapor deposition method of producing fluorine-doped tin oxide coatings
IN164438B (de) *	1984-12-28	1989-03-18	M & T Chemicals Inc
JPS61227946A (ja) *	1985-03-30	1986-10-11	Asahi Glass Co Ltd	電導性ガラス
DE3673612D1 (de) *	1985-05-14	1990-09-27	M & T Chemicals Inc	Herstellungsverfahren durchsichtiger schleierfreier zinnoxydschichten.
JPS63199863A (ja) *	1987-02-17	1988-08-18	Asahi Glass Co Ltd	透明性電導体

1987
- 1987-08-31 US US07/090,851 patent/US4880664A/en not_active Expired - Fee Related
1988
- 1988-08-26 EP EP88113976A patent/EP0305928B1/de not_active Expired - Lifetime
- 1988-08-26 DE DE8888113976T patent/DE3881455T2/de not_active Expired - Fee Related
- 1988-08-26 AT AT88113976T patent/ATE90167T1/de not_active IP Right Cessation
- 1988-08-29 CA CA000575916A patent/CA1333461C/en not_active Expired - Fee Related
- 1988-08-31 JP JP63215336A patent/JPH01145350A/ja active Pending

Also Published As

Publication number	Publication date
JPH01145350A (ja)	1989-06-07
DE3881455D1 (de)	1993-07-08
EP0305928B1 (de)	1993-06-02
EP0305928A2 (de)	1989-03-08
DE3881455T2 (de)	1993-09-09
EP0305928A3 (en)	1990-03-07
CA1333461C (en)	1994-12-13
US4880664A (en)	1989-11-14

Legal Events

Date	Code	Title	Description
1993-12-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties

Publication	Publication Date	Title
ATE90167T1 (de)	1993-06-15	Verfahren zum niederschlagen von rauhem zinnoxid.
RU2194089C2 (ru)	2002-12-10	Способ получения покрытия из оксида олова на стекле
KR100238740B1 (ko)	2000-01-15	유리 기판의 피복법
EP1057791B1 (de)	2004-05-12	Verfahren zum Herstellen einer Glasplatte mit unebener Oberfläche
EP0309902A3 (de)	1990-03-07	Dampfphasenabscheidung von Zinnoxyd auf Floatglas im Zinnbad
FI972260A0 (fi)	1997-05-28	Laite ja menetelmä pintojen käsittelemiseksi
FR2303090A1 (fr)	1976-10-01	Procede pour realiser un revetement absorbant transparent et produits obtenus
CA2049441A1 (en)	1992-03-01	Method of coating glass
DE68906236D1 (de)	1993-06-03	Verfahren zur beschichtung von glas.
KR920700105A (ko)	1992-02-19	코팅 글라스 구조물 및 그 제조방법
WO1989004549A2 (en)	1989-05-18	Annealing method for iii-v deposition
AU1934488A (en)	1989-02-13	Apparatus for coating a substrate
EP0390150B1 (de)	1993-08-04	Verfahren zur Herstellung einer Metalloxidschicht
PL275999A1 (en)	1989-07-24	Method and device for depositing a thin layer on a transparent substrate
JPS57161857A (en)	1982-10-05	Photomask blank plate
DE3681770D1 (de)	1991-11-07	Zinnoxydschicht, verfahren zur beschichtung und so beschichtetes substrat.
SE9602269L (sv)	1996-12-10	Glasningspanel med solfiltrerande egenskaper och förfarande för framställning av densamma
JPS57161856A (en)	1982-10-05	Photomask
JPS55121648A (en)	1980-09-18	Cvd device
JPS5793346A (en)	1982-06-10	Production of photomask plate
DE3784547D1 (de)	1993-04-15	Herstellungsverfahren einer niedergeschlagenen schicht.
JPS5717158A (en)	1982-01-28	Manufacture of semiconductor device
ATE40977T1 (de)	1989-03-15	Verfahren zum aufbringen einer zinnoxidschicht auf ein substrat ausgehend von gasfoermigen zinnverbindungen.
JPS57102044A (en)	1982-06-24	Insulating isolation substrate
JPS56125845A (en)	1981-10-02	Formation of pattern