ATE95845T1 - Abaenderung der inneren struktur von metallen. - Google Patents
Abaenderung der inneren struktur von metallen.Info
- Publication number
- ATE95845T1 ATE95845T1 AT89308265T AT89308265T ATE95845T1 AT E95845 T1 ATE95845 T1 AT E95845T1 AT 89308265 T AT89308265 T AT 89308265T AT 89308265 T AT89308265 T AT 89308265T AT E95845 T1 ATE95845 T1 AT E95845T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- metals
- structural
- layering
- structural metal
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 6
- 239000002184 metal Substances 0.000 title abstract 6
- 150000002739 metals Chemical class 0.000 title abstract 3
- 230000004048 modification Effects 0.000 title 1
- 238000012986 modification Methods 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- -1 potassium Chemical class 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/90—Ion implanted
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12812—Diverse refractory group metal-base components: alternative to or next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12819—Group VB metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/12833—Alternative to or next to each other
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/232,284 US4915746A (en) | 1988-08-15 | 1988-08-15 | Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures |
| EP89308265A EP0356111B1 (de) | 1988-08-15 | 1989-08-15 | Abänderung der inneren Struktur von Metallen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE95845T1 true ATE95845T1 (de) | 1993-10-15 |
Family
ID=22872534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT89308265T ATE95845T1 (de) | 1988-08-15 | 1989-08-15 | Abaenderung der inneren struktur von metallen. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4915746A (de) |
| EP (1) | EP0356111B1 (de) |
| JP (1) | JP2930327B2 (de) |
| CN (1) | CN1020239C (de) |
| AT (1) | ATE95845T1 (de) |
| DE (1) | DE68909865T2 (de) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2823276B2 (ja) * | 1989-03-18 | 1998-11-11 | 株式会社東芝 | X線マスクの製造方法および薄膜の内部応力制御装置 |
| WO1990014670A1 (en) * | 1989-05-02 | 1990-11-29 | Electric Power Research Institute, Inc. | Isotope deposition, stimulation, and direct energy conversion for nuclear fusion in a solid |
| KR940007867B1 (ko) * | 1990-10-30 | 1994-08-26 | 가부시키가이샤 도시바 | 고온열처리용 지그 |
| FR2672829B1 (fr) * | 1991-02-19 | 1995-06-30 | Nitruvid | Procede pour realiser une liaison par brasage entre deux pieces, notamment une piece ceramique et une piece metallique, et ensemble soude realise par ce procede. |
| US5248130A (en) * | 1991-03-11 | 1993-09-28 | Eaton Corporation | Vehicle leaf spring with irradiated center for crack diversion |
| AT398580B (de) * | 1991-11-05 | 1994-12-27 | Strauss Helmut | Beschichtung für metallische oder nichtmetallische substrate, verfahren und vorrichtung zu deren herstellung |
| US5298095A (en) * | 1991-12-20 | 1994-03-29 | Rmi Titanium Company | Enhancement of hot workability of titanium base alloy by use of thermal spray coatings |
| US5543348A (en) * | 1995-03-29 | 1996-08-06 | Kabushiki Kaisha Toshiba | Controlled recrystallization of buried strap in a semiconductor memory device |
| US5556713A (en) * | 1995-04-06 | 1996-09-17 | Southwest Research Institute | Diffusion barrier for protective coatings |
| US5905279A (en) * | 1996-04-09 | 1999-05-18 | Kabushiki Kaisha Toshiba | Low resistant trench fill for a semiconductor device |
| US5885896A (en) * | 1996-07-08 | 1999-03-23 | Micron Technology, Inc. | Using implants to lower anneal temperatures |
| US6083567A (en) * | 1996-08-30 | 2000-07-04 | University Of Maryland, Baltimore County | Sequential ion implantation and deposition (SIID) technique |
| US5763017A (en) * | 1996-10-28 | 1998-06-09 | Toyo Technologies Inc. | Method for producing micro-bubble-textured material |
| US6098655A (en) * | 1996-12-03 | 2000-08-08 | Carolina Power & Light Company | Alleviating sticking of normally closed valves in nuclear reactor plants |
| US6063246A (en) * | 1997-05-23 | 2000-05-16 | University Of Houston | Method for depositing a carbon film on a membrane |
| US6143141A (en) * | 1997-09-12 | 2000-11-07 | Southwest Research Institute | Method of forming a diffusion barrier for overlay coatings |
| US6351036B1 (en) | 1998-08-20 | 2002-02-26 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with a barrier film and process for making same |
| US6188134B1 (en) * | 1998-08-20 | 2001-02-13 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with rubidium barrier film and process for making same |
| WO2001061067A1 (fr) * | 2000-02-17 | 2001-08-23 | Anatoly Nikolaevich Paderov | Revetement de protection composite fait d'alliages refractaires |
| US7229675B1 (en) | 2000-02-17 | 2007-06-12 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
| US6465887B1 (en) | 2000-05-03 | 2002-10-15 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with diffusion barrier and process for making same |
| US9566148B2 (en) * | 2000-05-12 | 2017-02-14 | Vactronix Scientific, Inc. | Self-supporting laminated films, structural materials and medical devices manufactured therefrom and methods of making same |
| US6593227B1 (en) * | 2001-05-08 | 2003-07-15 | Advanced Micro Devices, Inc. | Method and apparatus for planarizing surfaces of semiconductor device conductive layers |
| EP1946797A3 (de) * | 2001-12-12 | 2009-03-11 | The Univ. of Alberta, The Univ. of British Columbia, Carleton Univ., Simon Fraser Univ. and The Univ. of Victoria | Radioaktives Ion |
| US20050118098A1 (en) * | 2001-12-12 | 2005-06-02 | Vincent John S. | Radioactive ion |
| DE102004051374A1 (de) * | 2003-10-30 | 2005-06-02 | Sumitomo Electric Industries, Ltd. | Galvanogeformtes Ionenimplantations-Strukturmaterial und Verfahren zur Herstellung des Strukturmaterials |
| GB2450933A (en) * | 2007-07-13 | 2009-01-14 | Hauzer Techno Coating Bv | Method of providing a hard coating |
| CN102582156A (zh) * | 2012-02-10 | 2012-07-18 | 王宝根 | 超音速火焰铝粉融合铁复合板生产流水线 |
| CN103921498B (zh) * | 2013-01-15 | 2017-08-29 | 深圳富泰宏精密工业有限公司 | 具有硬质膜层的不锈钢制品及其制备方法 |
| CN104342627B (zh) * | 2014-09-25 | 2016-12-07 | 昆明理工大学 | 一种纯铜材料表面强化处理方法 |
| CN105543797A (zh) * | 2015-12-12 | 2016-05-04 | 朱惠冲 | 铼镧稀土合金高能电子注射靶的制备工艺 |
| US10017844B2 (en) | 2015-12-18 | 2018-07-10 | General Electric Company | Coated articles and method for making |
| CN107385404A (zh) * | 2017-06-28 | 2017-11-24 | 江苏大学 | 一种使用氦离子注入提高镍基合金表层硬度的工艺方法 |
| CN114262912B (zh) * | 2020-10-16 | 2024-03-15 | 天津大学 | 具有位错-应变效应的IrNi纳米颗粒 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900636A (en) * | 1971-01-21 | 1975-08-19 | Gillette Co | Method of treating cutting edges |
| IL38468A (en) * | 1971-02-02 | 1974-11-29 | Hughes Aircraft Co | Electrical resistance device and its production |
| US3806380A (en) * | 1971-03-05 | 1974-04-23 | Hitachi Ltd | Method for hardening treatment of aluminum or aluminum-base alloy |
| GB1392811A (en) * | 1971-04-07 | 1975-04-30 | Atomic Energy Authority Uk | Methods for treating steel to modify the structure thereof |
| US3811936A (en) * | 1971-12-22 | 1974-05-21 | Westinghouse Electric Corp | Method for producing refractory metal members by vapor deposition,and resulting product |
| CA1028935A (en) * | 1973-12-14 | 1978-04-04 | Niels N. Engel | Superhard martensite and method of making same |
| GB1555802A (en) * | 1976-01-28 | 1979-11-14 | Atomic Energy Authority Uk | Metalworking tool elements |
| US4123833A (en) * | 1977-10-13 | 1978-11-07 | Westinghouse Electric Corp. | Method of producing doped tungsten filaments by ion-implantation |
| US4296352A (en) * | 1979-12-19 | 1981-10-20 | General Electric Company | Incandescent lamp |
| US4433005A (en) * | 1980-05-05 | 1984-02-21 | United Technologies Corporation | Fatigue resistant tatanium alloy articles |
| JPS5739152A (en) * | 1980-08-18 | 1982-03-04 | Matsushita Electronics Corp | Tungsten material for light bulb |
| US4372985A (en) * | 1980-12-08 | 1983-02-08 | Rockwell International Corporation | Ion implantation for hard bubble suppression |
| JPS57186284A (en) * | 1981-05-11 | 1982-11-16 | Hitachi Ltd | Manufacture of magnetic bubble memory element |
| JPS57186285A (en) * | 1981-05-11 | 1982-11-16 | Hitachi Ltd | Manufacture of magnetic bubble memory element |
| US4542009A (en) * | 1983-04-21 | 1985-09-17 | Combustion Engineering, Inc. | Synthesis of intercalatable layered stable transition metal chalcogenides and alkali metal-transition metal chalcogenides |
| US4520040A (en) * | 1983-12-15 | 1985-05-28 | Varian Associates, Inc. | Ferromagnetic films for high density recording and methods of production |
| US4743308A (en) * | 1987-01-20 | 1988-05-10 | Spire Corporation | Corrosion inhibition of metal alloys |
-
1988
- 1988-08-15 US US07/232,284 patent/US4915746A/en not_active Expired - Fee Related
-
1989
- 1989-08-15 EP EP89308265A patent/EP0356111B1/de not_active Expired - Lifetime
- 1989-08-15 CN CN89107597A patent/CN1020239C/zh not_active Expired - Fee Related
- 1989-08-15 AT AT89308265T patent/ATE95845T1/de not_active IP Right Cessation
- 1989-08-15 DE DE89308265T patent/DE68909865T2/de not_active Expired - Fee Related
- 1989-08-15 JP JP1210568A patent/JP2930327B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0356111A1 (de) | 1990-02-28 |
| JPH0320455A (ja) | 1991-01-29 |
| EP0356111B1 (de) | 1993-10-13 |
| DE68909865T2 (de) | 1994-05-11 |
| CN1020239C (zh) | 1993-04-07 |
| US4915746A (en) | 1990-04-10 |
| DE68909865D1 (de) | 1993-11-18 |
| JP2930327B2 (ja) | 1999-08-03 |
| CN1041009A (zh) | 1990-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |