BE557168A - - Google Patents

Info

Publication number
BE557168A
BE557168A BE557168DA BE557168A BE 557168 A BE557168 A BE 557168A BE 557168D A BE557168D A BE 557168DA BE 557168 A BE557168 A BE 557168A
Authority
BE
Belgium
Prior art keywords
impurities
impurity
concentration
heat treatment
emi
Prior art date
Application number
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE557168A publication Critical patent/BE557168A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
BE557168D 1956-05-02 BE557168A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1174438X 1956-05-02

Publications (1)

Publication Number Publication Date
BE557168A true BE557168A (de)

Family

ID=10879740

Family Applications (1)

Application Number Title Priority Date Filing Date
BE557168D BE557168A (de) 1956-05-02

Country Status (2)

Country Link
BE (1) BE557168A (de)
FR (1) FR1174438A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260624A (en) * 1961-05-10 1966-07-12 Siemens Ag Method of producing a p-n junction in a monocrystalline semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1248102A (fr) * 1959-10-30 1960-12-09 Materiel Telephonique Préparation des semi-conducteurs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260624A (en) * 1961-05-10 1966-07-12 Siemens Ag Method of producing a p-n junction in a monocrystalline semiconductor device

Also Published As

Publication number Publication date
FR1174438A (fr) 1959-03-11

Similar Documents

Publication Publication Date Title
FR2477771A1 (fr) Procede pour la realisation d'un dispositif semiconducteur a haute tension de blocage et dispositif semiconducteur ainsi realise
FR2804245A1 (fr) Procede de formation d'une couche mince cristalline contenant du silicium
EP0760162B1 (de) Verfahren zur herstellung einer struktur mit niedrigen konzentrationsdefekten mit einer in einem halbleitersubstrat begrabenen oxydschicht
FR2794897A1 (fr) Plaquette a semi-conducteur et dispositif a semi-conducteur fabrique a partir d'une telle plaquette
FR2658839A1 (fr) Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.
EP2143687B1 (de) Reinigungsverfahren eines substrats aus kristallinem silizium und herstellungsverfahren einer fotovoltaikzelle
EP2795668B1 (de) Verfahren zur herstellung eines mos-stapels auf einem diamantsubstrat
EP0034982A1 (de) Verfahren zur Herstellung homogener Schichten aus Hg1-xCdxTe
EP1774579B1 (de) Herstellungsverfahren für eine mehrschichtige struktur mit trennschicht
EP1580805B1 (de) Verfahren zum Präparieren einer Siliziumoxidschicht durch Oxidation bei hohe Temperatur auf einem Substrat mit einer Silizium-Germanium Oberfläche
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
BE557168A (de)
FR2497402A1 (fr) Procede de fabrication de jonctions p-n par electromigration
FR2463509A1 (fr) Procede de fabrication de dispositifs semi-conducteurs et dispositifs obtenus par ce procede
FR3073076A1 (fr) Point memoire a materiau a changement de phase
EP1547136B1 (de) Verfahren zur herstellung einer drahtförmigen nanostruktur aus einer halbleitenden schicht
FR2531106A1 (fr) Procede de metallisation de la face arriere d'une plaquette de silicium
FR2484703A1 (fr) Procede pour realiser une jonction pn sur un semiconducteur compose du groupe ii-vi
EP4060716A1 (de) Verfahren zur veränderung eines spannungszustandes von mindestens einer halbleiterschicht
FR2905706A1 (fr) Procede d'elimination par recuit des precipites dans un materiau semi conducteur ii vi
FR2814855A1 (fr) Jonction schottky a barriere stable sur carbure de silicium
EP0127488B1 (de) Verfahren zum Herstellen eines Leistungstransistors mit Spannungsbelastbarkeit beim Öffnen
FR2709842A1 (fr) Dispositif de commutation optique et procédé de fabrication d'un tel dispositif.
EP0012324B1 (de) Verfahren zur Herstellung von Kontakten auf Halbleiterbereichen geringer Tiefe
FR2664096A1 (fr) Procede de metallisation pour dispositif a semi-conducteur utilisant du nitrure de titane amorphe.