BE578161A - Agents d'encapsulage à bas point de fusion pour éléments de circuits - Google Patents
Agents d'encapsulage à bas point de fusion pour éléments de circuitsInfo
- Publication number
- BE578161A BE578161A BE578161A BE578161A BE578161A BE 578161 A BE578161 A BE 578161A BE 578161 A BE578161 A BE 578161A BE 578161 A BE578161 A BE 578161A BE 578161 A BE578161 A BE 578161A
- Authority
- BE
- Belgium
- Prior art keywords
- melting point
- low melting
- circuit elements
- encapsulating agents
- point encapsulating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
- C01G28/008—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/025—Other inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/087—Chemical composition of glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/15—Nonoxygen containing chalogenides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73083258A | 1958-04-28 | 1958-04-28 | |
| US79891259 US2961350A (en) | 1958-04-28 | 1959-03-20 | Glass coating of circuit elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE578161A true BE578161A (fr) | 1959-08-17 |
Family
ID=27112118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE578161A BE578161A (fr) | 1958-04-28 | 1959-04-27 | Agents d'encapsulage à bas point de fusion pour éléments de circuits |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US2961350A (fr) |
| BE (1) | BE578161A (fr) |
| CH (1) | CH387175A (fr) |
| DE (1) | DE1179277B (fr) |
| ES (1) | ES249413A1 (fr) |
| FR (1) | FR1226008A (fr) |
| GB (1) | GB923338A (fr) |
| NL (1) | NL238657A (fr) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3200310A (en) * | 1959-09-22 | 1965-08-10 | Carman Lab Inc | Glass encapsulated semiconductor device |
| NL263412A (fr) * | 1960-04-22 | |||
| US3170813A (en) * | 1961-05-19 | 1965-02-23 | Westinghouse Electric Corp | Method for encapsulating semiconductors |
| US3189799A (en) * | 1961-06-14 | 1965-06-15 | Microwave Ass | Semiconductor devices and method of fabricating them |
| US3251918A (en) * | 1961-06-14 | 1966-05-17 | Du Pont | Process for making a capacitor element for high temperature operation |
| US3546013A (en) * | 1961-09-29 | 1970-12-08 | Ibm | Method of providing protective coverings for semiconductors |
| US3212921A (en) * | 1961-09-29 | 1965-10-19 | Ibm | Method of forming a glass film on an object and the product produced thereby |
| DE1252819B (de) * | 1961-11-06 | 1967-10-26 | Western Electric Company Incorporated, New York, N. Y. (V. St. A.) | Elektronisches Festkörperbauelement |
| US3340438A (en) * | 1965-04-05 | 1967-09-05 | Ibm | Encapsulation of electronic modules |
| GB1054450A (fr) * | 1963-09-26 | 1900-01-01 | ||
| US4198444A (en) * | 1975-08-04 | 1980-04-15 | General Electric Company | Method for providing substantially hermetic sealing means for electronic components |
| JPS5683050A (en) * | 1979-12-12 | 1981-07-07 | Toshiba Corp | Semiconductor device |
| ATE137608T1 (de) * | 1988-11-10 | 1996-05-15 | Applied Materials Inc | Planarisationsmethode für ic-struktur |
| US5112776A (en) * | 1988-11-10 | 1992-05-12 | Applied Materials, Inc. | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing |
| US5244841A (en) * | 1988-11-10 | 1993-09-14 | Applied Materials, Inc. | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing |
| US5204288A (en) * | 1988-11-10 | 1993-04-20 | Applied Materials, Inc. | Method for planarizing an integrated circuit structure using low melting inorganic material |
| US5958100A (en) * | 1993-06-03 | 1999-09-28 | Micron Technology, Inc. | Process of making a glass semiconductor package |
| WO2003087424A1 (fr) * | 2002-04-15 | 2003-10-23 | Schott Ag | Procede de formation de boitiers dans le cadre de composants electroniques et composants electroniques encapsules hermetiquement |
| JP2006503976A (ja) * | 2002-04-15 | 2006-02-02 | ショット アクチエンゲゼルシャフト | 金属表面を被覆する方法および被覆された金属表面を有する基板 |
| JP2005528783A (ja) | 2002-04-15 | 2005-09-22 | ショット アーゲー | 電子回路用のコピー防止を作成する方法 |
| US6925781B1 (en) | 2004-02-03 | 2005-08-09 | Playtex Products, Inc. | Integrated cutting tool for waste disposal method and apparatus |
| US10191186B2 (en) | 2013-03-15 | 2019-01-29 | Schott Corporation | Optical bonding through the use of low-softening point optical glass for IR optical applications and products formed |
| WO2019118406A1 (fr) * | 2017-12-11 | 2019-06-20 | Schott Corporation | Verres athermiques et systèmes athermiques pour optique infrarouge |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE597244C (de) * | 1930-07-24 | 1934-05-19 | Porzellanfabrik Ph Rosenthal & | Verfahren zur Herstellung elektrischer Widerstaende |
| DE765307C (de) * | 1938-07-29 | 1954-08-16 | Siemens Schuckertwerke A G | Leicht schmelzbares siliciumfreies Glas |
| US2706692A (en) * | 1951-12-07 | 1955-04-19 | Poor & Co | Method of bonding vitreous enamels and articles produced thereby |
| US2883295A (en) * | 1958-02-24 | 1959-04-21 | Servo Corp Of America | Glass composition |
-
1959
- 1959-03-20 US US79891259 patent/US2961350A/en not_active Expired - Lifetime
- 1959-04-22 FR FR792870A patent/FR1226008A/fr not_active Expired
- 1959-04-22 DE DEW25445A patent/DE1179277B/de active Pending
- 1959-04-24 GB GB1399759A patent/GB923338A/en not_active Expired
- 1959-04-27 BE BE578161A patent/BE578161A/fr unknown
- 1959-04-28 ES ES0249413A patent/ES249413A1/es not_active Expired
- 1959-04-28 CH CH7261859A patent/CH387175A/de unknown
- 1959-04-29 NL NL238657D patent/NL238657A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH387175A (de) | 1965-01-31 |
| NL238657A (fr) | 1964-01-27 |
| GB923338A (en) | 1963-04-10 |
| US2961350A (en) | 1960-11-22 |
| DE1179277B (de) | 1964-10-08 |
| ES249413A1 (es) | 1959-12-01 |
| FR1226008A (fr) | 1960-07-06 |
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