BE612393A - Dispositif pour obtenir un corps semiconducteur pur, de préférence du silicium. - Google Patents

Dispositif pour obtenir un corps semiconducteur pur, de préférence du silicium.

Info

Publication number
BE612393A
BE612393A BE612393A BE612393A BE612393A BE 612393 A BE612393 A BE 612393A BE 612393 A BE612393 A BE 612393A BE 612393 A BE612393 A BE 612393A BE 612393 A BE612393 A BE 612393A
Authority
BE
Belgium
Prior art keywords
obtaining
semiconductor body
preferably silicon
pure semiconductor
pure
Prior art date
Application number
BE612393A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE612393A publication Critical patent/BE612393A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
BE612393A 1961-01-26 1962-01-08 Dispositif pour obtenir un corps semiconducteur pur, de préférence du silicium. BE612393A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES72220A DE1223804B (de) 1961-01-26 1961-01-26 Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium

Publications (1)

Publication Number Publication Date
BE612393A true BE612393A (fr) 1962-05-02

Family

ID=7503045

Family Applications (1)

Application Number Title Priority Date Filing Date
BE612393A BE612393A (fr) 1961-01-26 1962-01-08 Dispositif pour obtenir un corps semiconducteur pur, de préférence du silicium.

Country Status (5)

Country Link
US (1) US3286685A (fr)
BE (1) BE612393A (fr)
CH (1) CH442247A (fr)
DE (1) DE1223804B (fr)
GB (1) GB991184A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229986B (de) * 1964-07-21 1966-12-08 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleiter-materials
US3456616A (en) * 1968-05-08 1969-07-22 Texas Instruments Inc Vapor deposition apparatus including orbital substrate support
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
DE3644976C2 (fr) * 1985-12-04 1992-08-27 Passavant-Werke Ag, 6209 Aarbergen, De
US4826668A (en) * 1987-06-11 1989-05-02 Union Carbide Corporation Process for the production of ultra high purity polycrystalline silicon
IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
IT1246735B (it) * 1990-06-27 1994-11-26 Union Carbide Coatings Service Mandrino di grafie per un filamento iniziatore nella fabbricazione di silicio policristallino e metodo di protezione.
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
WO2009128888A1 (fr) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Appareil de fabrication destiné à déposer un matériau et électrode utilisée dans un tel appareil
TW201142069A (en) * 2010-03-19 2011-12-01 Gt Solar Inc System and method for polycrystalline silicon deposition
JP2013535390A (ja) 2010-07-19 2013-09-12 アールイーシー シリコン インコーポレイテッド 多結晶シリコン生産
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
CN103501889B (zh) 2011-03-30 2016-01-27 维克托·格里戈里耶维奇·科列斯尼克 通过在SiO2和FeTiO3颗粒与磁波之间产生电磁相互作用获得硅和钛的方法
DE102011077967A1 (de) 2011-06-22 2012-12-27 Wacker Chemie Ag Elektrode und Verfahren zur Stromversorgung eines Reaktors
MY162042A (en) * 2011-07-20 2017-05-31 Hemlock Semiconductor Operations Llc Manufacturing apparatus for depositing a material on a carrier body
KR101739206B1 (ko) * 2015-12-09 2017-05-23 오씨아이 주식회사 지락 전류 방지 및 실리콘 더스트 제거 효과가 우수한 폴리실리콘 제조 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA602898A (en) * 1960-08-02 Siemens-Schuckertwerke Aktiengesellschaft Method and apparatus for producing highest-purity silicon for electric semiconductor devices
DE1139812B (de) * 1958-12-09 1962-11-22 Siemens Ag Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung
US3021198A (en) * 1958-07-24 1962-02-13 Siemens And Halske Ag Berling Method for producing semiconductor single crystals
US2967115A (en) * 1958-07-25 1961-01-03 Gen Electric Method of depositing silicon on a silica coated substrate
NL246189A (fr) * 1958-12-09
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
NL256255A (fr) * 1959-11-02

Also Published As

Publication number Publication date
CH442247A (de) 1967-08-31
GB991184A (en) 1965-05-05
DE1223804B (de) 1966-09-01
US3286685A (en) 1966-11-22

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