BE618732A - Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse

Info

Publication number
BE618732A
BE618732A BE618732A BE618732A BE618732A BE 618732 A BE618732 A BE 618732A BE 618732 A BE618732 A BE 618732A BE 618732 A BE618732 A BE 618732A BE 618732 A BE618732 A BE 618732A
Authority
BE
Belgium
Prior art keywords
gas phase
semiconductor devices
manufacturing semiconductor
monocrystalline deposition
monocrystalline
Prior art date
Application number
BE618732A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE618732A publication Critical patent/BE618732A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
BE618732A 1961-06-09 1962-06-08 Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse BE618732A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0074267 DE1138481C2 (de) 1961-06-09 1961-06-09 Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase

Publications (1)

Publication Number Publication Date
BE618732A true BE618732A (fr) 1962-12-14

Family

ID=7504530

Family Applications (1)

Application Number Title Priority Date Filing Date
BE618732A BE618732A (fr) 1961-06-09 1962-06-08 Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse

Country Status (4)

Country Link
US (1) US3152933A (fr)
BE (1) BE618732A (fr)
DE (1) DE1138481C2 (fr)
GB (1) GB987895A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297002A (fr) * 1962-08-23 1900-01-01
DE1467360B2 (de) * 1962-12-01 1971-08-12 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einkristalliner schichten aus indiumantimonid
US3304908A (en) * 1963-08-14 1967-02-21 Merck & Co Inc Epitaxial reactor including mask-work support
DE1544259A1 (de) * 1965-02-05 1970-07-09 Siemens Ag Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten
US3607135A (en) * 1967-10-12 1971-09-21 Ibm Flash evaporating gallium arsenide
US3610202A (en) * 1969-05-23 1971-10-05 Siemens Ag Epitactic apparatus
US3658569A (en) * 1969-11-13 1972-04-25 Nasa Selective nickel deposition
US3647530A (en) * 1969-11-13 1972-03-07 Texas Instruments Inc Production of semiconductor material
US3936328A (en) * 1972-04-28 1976-02-03 Mitsubishi Denki Kabushiki Kaisha Process of manufacturing semiconductor devices
BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
DE2541284A1 (de) * 1975-09-16 1977-03-24 Wacker Chemitronic Verfahren zur abscheidung von hochreinem halbleitermaterial
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US5651839A (en) * 1995-10-26 1997-07-29 Queen's University At Kingston Process for engineering coherent twin and coincident site lattice grain boundaries in polycrystalline materials
JP5959198B2 (ja) * 2008-04-14 2016-08-02 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
RU2494578C2 (ru) * 2008-04-14 2013-09-27 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
CN102047066B (zh) * 2008-04-14 2013-01-16 赫姆洛克半导体公司 用于沉积材料的制造设备和其中使用的电极
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
KR101115697B1 (ko) 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE943422C (de) * 1949-04-02 1956-05-17 Licentia Gmbh Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
BE536122A (fr) * 1954-03-05
DE1046196B (de) * 1954-11-27 1958-12-11 Siemens Ag Verfahren zur Herstellung eines Halbleiters fuer Flaechengleichrichter, -transistoren od. dgl. mit mehreren Bereichen verschiedener Leitfaehigkeit
NL225538A (fr) * 1955-11-02
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs
NL104094C (fr) * 1956-05-18
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
US3085032A (en) * 1960-02-26 1963-04-09 Bell Telephone Labor Inc Treatment of gallium arsenide
CH428675A (de) * 1960-03-02 1967-01-31 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium

Also Published As

Publication number Publication date
DE1138481C2 (de) 1963-05-22
DE1138481B (de) 1962-10-25
GB987895A (en) 1965-03-31
US3152933A (en) 1964-10-13

Similar Documents

Publication Publication Date Title
BE618583A (fr) Procédé de fabrication de dispositifs semi-conducteurs par précipitation monocristalline d'un corps semi-conducteur en partant de la phase gazeuse
FR1252005A (fr) Procédé de fabrication de silicium compact extra pur
FR1250270A (fr) Procédé de fabrication de dispositifs semi-conducteurs à jonctions uniformes
FR1170559A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1151572A (fr) Procédé de fabrication de dispositifs semi-conducteurs, à jonction soudée par évaporation
FR1386964A (fr) Procédé de fabrication de dispositifs semi-conducteurs intégrés
FR1276947A (fr) Fabrication de dispositifs semi-conducteurs à jonctions multiples
FR1197039A (fr) Procédé de fabrication de dispositifs semi-conducteurs
BE585390A (fr) Procédé de fabrication de silicium de très grande pureté.
BE575837A (fr) Procédé de fabrication de monocristaux semi-conducteurs.
FR1374977A (fr) Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse
FR1185444A (fr) Procédé de fabrication de systèmes d'électrodes semi-conducteurs
FR1420169A (fr) Procédé de fabrication de monocristaux semi-conducteurs par dépôt de substance semi-conductrice
BE580831A (fr) Procédé pour la fabrication, par sublimation, de tétrachlorure de zirconium pur
FR1538402A (fr) Procédé de fabrication de dispositifs semi-conducteurs intégrés
FR1374979A (fr) Procédé de fabrication de dispositifs semi-conducteurs par précipitation monocristalline d'un corps semi-conducteur en partant de la phase gazeuse
BE606242A (fr) Procédé de préparation de couches particulièrement minces de composés semi-conducteurs du type A<III>B<V>
FR1522201A (fr) Procédé de fabrication de dispositifs semi-conducteurs à jonction
AU253719B2 (en) Process for the production of semi - conductor arrangements by monocrystalline deposition of semi - conductor material from the gas phase
FR79855E (fr) Procédé de fabrication de dioléfines conjuguées à partir des métadioxanes
AU1826962A (en) Process for the production of semi - conductor arrangements by monocrystalline deposition of semi - conductor material from the gas phase
FR1318305A (fr) Procédé de fabrication d'un monocristal d'une substance, par exemple d'une substance semi-conductrice à partir de sa phase vapeur
FR1254365A (fr) Procédé continu de fabrication de dispositifs à semi-conducteurs
BE610520A (fr) Procédé pour la fabrication de dispositifs semi-conducteurs.
FR1313672A (fr) Procédé de fabrication de tiges-semi-conductrices monocristallines par tirage sans creuset