BE642102A - - Google Patents

Info

Publication number
BE642102A
BE642102A BE642102A BE642102A BE642102A BE 642102 A BE642102 A BE 642102A BE 642102 A BE642102 A BE 642102A BE 642102 A BE642102 A BE 642102A BE 642102 A BE642102 A BE 642102A
Authority
BE
Belgium
Application number
BE642102A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE642102A publication Critical patent/BE642102A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap
BE642102A 1963-01-04 1964-01-03 BE642102A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US249496A US3362858A (en) 1963-01-04 1963-01-04 Fabrication of semiconductor controlled rectifiers

Publications (1)

Publication Number Publication Date
BE642102A true BE642102A (cs) 1964-05-04

Family

ID=22943696

Family Applications (1)

Application Number Title Priority Date Filing Date
BE642102A BE642102A (cs) 1963-01-04 1964-01-03

Country Status (4)

Country Link
US (1) US3362858A (cs)
BE (1) BE642102A (cs)
FR (1) FR1378698A (cs)
GB (1) GB1018400A (cs)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475664A (en) * 1965-06-30 1969-10-28 Texas Instruments Inc Ambient atmosphere isolated semiconductor devices
US3642544A (en) * 1965-08-02 1972-02-15 Ibm Method of fabricating solid-state devices
US3475235A (en) * 1966-10-05 1969-10-28 Westinghouse Electric Corp Process for fabricating a semiconductor device
US3562610A (en) * 1967-05-25 1971-02-09 Westinghouse Electric Corp Controlled rectifier with improved switching characteristics
US3852128A (en) * 1969-02-22 1974-12-03 Licentia Gmbh Method of diffusing impurities into semiconductor wafers
FR2108781B1 (cs) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3943016A (en) * 1970-12-07 1976-03-09 General Electric Company Gallium-phosphorus simultaneous diffusion process
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3914138A (en) * 1974-08-16 1975-10-21 Westinghouse Electric Corp Method of making semiconductor devices by single step diffusion
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
US4264383A (en) * 1979-08-23 1981-04-28 Westinghouse Electric Corp. Technique for making asymmetric thyristors
US4611222A (en) * 1979-10-12 1986-09-09 Westinghouse Electric Corp. Solid-state switch
JPS5824006B2 (ja) * 1980-01-30 1983-05-18 株式会社日立製作所 不純物拡散法
FR2815471B1 (fr) * 2000-10-12 2003-02-07 St Microelectronics Sa Composant vertical a tenue en tension elevee

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
NL251064A (cs) * 1955-11-04
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
NL241124A (cs) * 1958-07-09
US3041213A (en) * 1958-11-17 1962-06-26 Texas Instruments Inc Diffused junction semiconductor device and method of making
NL276751A (cs) * 1961-04-10

Also Published As

Publication number Publication date
US3362858A (en) 1968-01-09
FR1378698A (fr) 1964-11-13
GB1018400A (en) 1966-01-26

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