BE643783A - Dispositif de commutation de puissance à semi-conducteur - Google Patents

Dispositif de commutation de puissance à semi-conducteur

Info

Publication number
BE643783A
BE643783A BE643783DA BE643783A BE 643783 A BE643783 A BE 643783A BE 643783D A BE643783D A BE 643783DA BE 643783 A BE643783 A BE 643783A
Authority
BE
Belgium
Prior art keywords
switching device
power switching
semiconductor power
semiconductor
switching
Prior art date
Application number
Other languages
English (en)
Inventor
Stanislas Teszner
Original Assignee
Forges Et Ateliers De Constructions Electriques De Jeumont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR925330A external-priority patent/FR1361920A/fr
Application filed by Forges Et Ateliers De Constructions Electriques De Jeumont filed Critical Forges Et Ateliers De Constructions Electriques De Jeumont
Publication of BE643783A publication Critical patent/BE643783A/fr

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Generation Of Surge Voltage And Current (AREA)
BE643783D 1963-02-19 1964-02-13 Dispositif de commutation de puissance à semi-conducteur BE643783A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR925330A FR1361920A (fr) 1963-02-19 1963-02-19 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance
FR962388 1964-02-01

Publications (1)

Publication Number Publication Date
BE643783A true BE643783A (fr) 1964-05-29

Family

ID=32044408

Family Applications (1)

Application Number Title Priority Date Filing Date
BE643783D BE643783A (fr) 1963-02-19 1964-02-13 Dispositif de commutation de puissance à semi-conducteur

Country Status (6)

Country Link
US (1) US3227896A (fr)
BE (1) BE643783A (fr)
CH (1) CH422998A (fr)
DE (1) DE1439674C3 (fr)
GB (1) GB1051773A (fr)
NL (1) NL6401336A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358195A (en) * 1964-07-24 1967-12-12 Motorola Inc Remote cutoff field effect transistor
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3430113A (en) * 1965-10-04 1969-02-25 Us Air Force Current modulated field effect transistor
DE1564790C3 (de) * 1966-12-22 1978-03-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Spannungsabhängiger Halbleiterkondensator
US3535599A (en) * 1969-06-11 1970-10-20 David G Deak Field effect semiconductor device with multiple channel regions selectively switched from conducting to nonconducting
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor

Also Published As

Publication number Publication date
DE1439674B2 (de) 1974-10-31
DE1439674A1 (de) 1968-12-19
US3227896A (en) 1966-01-04
DE1439674C3 (de) 1975-07-03
CH422998A (fr) 1966-10-31
GB1051773A (en) 1966-12-21
NL6401336A (nl) 1964-08-20

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