BE674294A - - Google Patents

Info

Publication number
BE674294A
BE674294A BE674294DA BE674294A BE 674294 A BE674294 A BE 674294A BE 674294D A BE674294D A BE 674294DA BE 674294 A BE674294 A BE 674294A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE674294A publication Critical patent/BE674294A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/922—Diffusion along grain boundaries
BE674294D 1964-12-28 BE674294A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421532A US3336661A (en) 1964-12-28 1964-12-28 Semiconductive device fabrication

Publications (1)

Publication Number Publication Date
BE674294A true BE674294A (cs)

Family

ID=23670929

Family Applications (1)

Application Number Title Priority Date Filing Date
BE674294D BE674294A (cs) 1964-12-28

Country Status (7)

Country Link
US (1) US3336661A (cs)
BE (1) BE674294A (cs)
DE (1) DE1514378B1 (cs)
FR (1) FR1464990A (cs)
GB (1) GB1119570A (cs)
NL (1) NL6516962A (cs)
SE (1) SE326500B (cs)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
GB1030670A (en) * 1964-12-02 1966-05-25 Standard Telephones Cables Ltd Semiconductor devices
US3463974A (en) * 1966-07-01 1969-08-26 Fairchild Camera Instr Co Mos transistor and method of manufacture
US3655545A (en) * 1968-02-28 1972-04-11 Ppg Industries Inc Post heating of sputtered metal oxide films
US3547717A (en) * 1968-04-29 1970-12-15 Sprague Electric Co Radiation resistant semiconductive device
US3620850A (en) * 1970-03-25 1971-11-16 Fairchild Camera Instr Co Oxygen annealing
US4139658A (en) * 1976-06-23 1979-02-13 Rca Corp. Process for manufacturing a radiation hardened oxide
US4214919A (en) * 1978-12-28 1980-07-29 Burroughs Corporation Technique of growing thin silicon oxide films utilizing argon in the contact gas
US4585492A (en) * 1984-07-30 1986-04-29 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced hole trapping
KR100732288B1 (ko) * 2005-04-15 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material
US2981646A (en) * 1958-02-11 1961-04-25 Sprague Electric Co Process of forming barrier layers
US3034211A (en) * 1959-12-29 1962-05-15 Pittsburgh Steel Co Method of making clad steel
US3147152A (en) * 1960-01-28 1964-09-01 Western Electric Co Diffusion control in semiconductive bodies
NL265382A (cs) * 1960-03-08
BE636316A (cs) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
NL6516962A (cs) 1966-06-29
GB1119570A (en) 1968-07-10
SE326500B (cs) 1970-07-27
FR1464990A (fr) 1967-03-20
US3336661A (en) 1967-08-22
DE1514378B1 (de) 1970-06-18

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