BE706200A - - Google Patents

Info

Publication number
BE706200A
BE706200A BE706200DA BE706200A BE 706200 A BE706200 A BE 706200A BE 706200D A BE706200D A BE 706200DA BE 706200 A BE706200 A BE 706200A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE706200A publication Critical patent/BE706200A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
BE706200D 1966-11-15 1967-11-08 BE706200A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59459966A 1966-11-15 1966-11-15

Publications (1)

Publication Number Publication Date
BE706200A true BE706200A (fr) 1968-05-08

Family

ID=24379581

Family Applications (1)

Application Number Title Priority Date Filing Date
BE706200D BE706200A (fr) 1966-11-15 1967-11-08

Country Status (3)

Country Link
US (1) US3487276A (fr)
BE (1) BE706200A (fr)
FR (1) FR1544514A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083428B1 (fr) * 1970-03-19 1976-07-23 Mitsubishi Electric Corp
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
DE2027459A1 (de) * 1970-06-04 1971-12-16 Ibm Deutschland Verfahren zur Kontrolle von Diffusions
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
US3777227A (en) * 1972-08-21 1973-12-04 Westinghouse Electric Corp Double diffused high voltage, high current npn transistor
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS5230389A (en) * 1975-09-03 1977-03-08 Hitachi Ltd Thyristor
JPS5248986A (en) * 1975-10-17 1977-04-19 Mitsubishi Electric Corp Semiconductor temperature sensitive switch element
US4117505A (en) * 1976-11-19 1978-09-26 Mitsubishi Denki Kabushiki Kaisha Thyristor with heat sensitive switching characteristics
JPS5821342A (ja) * 1981-07-31 1983-02-08 Hitachi Ltd 半導体装置
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion

Also Published As

Publication number Publication date
US3487276A (en) 1969-12-30
FR1544514A (fr) 1968-10-31

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19861130