BE756782A - Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal - Google Patents

Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal

Info

Publication number
BE756782A
BE756782A BE756782DA BE756782A BE 756782 A BE756782 A BE 756782A BE 756782D A BE756782D A BE 756782DA BE 756782 A BE756782 A BE 756782A
Authority
BE
Belgium
Prior art keywords
semiconductor
metal layer
insulating layers
structure containing
memory body
Prior art date
Application number
Other languages
English (en)
Inventor
D Kahng
E H Nicollian
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE756782A publication Critical patent/BE756782A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
BE756782D 1969-10-03 Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal BE756782A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86366369A 1969-10-03 1969-10-03

Publications (1)

Publication Number Publication Date
BE756782A true BE756782A (fr) 1971-03-01

Family

ID=25341528

Family Applications (1)

Application Number Title Priority Date Filing Date
BE756782D BE756782A (fr) 1969-10-03 Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal

Country Status (5)

Country Link
US (1) US3604988A (fr)
BE (1) BE756782A (fr)
DE (1) DE2048020A1 (fr)
FR (1) FR2064120A1 (fr)
NL (1) NL7014301A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method
US3877054A (en) * 1973-03-01 1975-04-08 Bell Telephone Labor Inc Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor
US4127900A (en) * 1976-10-29 1978-11-28 Massachusetts Institute Of Technology Reading capacitor memories with a variable voltage ramp
US4384299A (en) * 1976-10-29 1983-05-17 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
JPS5656677A (en) * 1979-10-13 1981-05-18 Toshiba Corp Semiconductor memory device
SU1005223A1 (ru) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Полупроводниковое запоминающее устройство
JP4657813B2 (ja) * 2005-05-31 2011-03-23 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (fr) * 1961-08-17
US3355637A (en) * 1965-04-15 1967-11-28 Rca Corp Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel

Also Published As

Publication number Publication date
US3604988A (en) 1971-09-14
NL7014301A (fr) 1971-04-06
DE2048020A1 (de) 1971-04-22
FR2064120A1 (fr) 1971-07-16

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