BE774112A - Memoire utilisant des transistors a seuil variable - Google Patents

Memoire utilisant des transistors a seuil variable

Info

Publication number
BE774112A
BE774112A BE774112A BE774112A BE774112A BE 774112 A BE774112 A BE 774112A BE 774112 A BE774112 A BE 774112A BE 774112 A BE774112 A BE 774112A BE 774112 A BE774112 A BE 774112A
Authority
BE
Belgium
Prior art keywords
memory
variable threshold
threshold transistors
transistors
variable
Prior art date
Application number
BE774112A
Other languages
English (en)
Inventor
E C Ross
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE774112A publication Critical patent/BE774112A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
BE774112A 1970-10-19 1971-10-18 Memoire utilisant des transistors a seuil variable BE774112A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8171370A 1970-10-19 1970-10-19

Publications (1)

Publication Number Publication Date
BE774112A true BE774112A (fr) 1972-02-14

Family

ID=22165910

Family Applications (1)

Application Number Title Priority Date Filing Date
BE774112A BE774112A (fr) 1970-10-19 1971-10-18 Memoire utilisant des transistors a seuil variable

Country Status (9)

Country Link
US (1) US3720925A (fr)
JP (1) JPS523701B1 (fr)
BE (1) BE774112A (fr)
CA (1) CA961159A (fr)
DE (1) DE2152109C3 (fr)
FR (1) FR2111709B1 (fr)
GB (1) GB1363509A (fr)
NL (1) NL182922C (fr)
SE (1) SE379444B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413804A1 (de) * 1973-05-04 1974-11-21 Ibm Schaltungsanordnung fuer eine wortorganisierte halbleiterspeichermatrix

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882469A (en) * 1971-11-30 1975-05-06 Texas Instruments Inc Non-volatile variable threshold memory cell
DE2403599B1 (de) * 1974-01-25 1975-02-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Kennungsgeber für Fern- oder Datenschreiber
US4091360A (en) * 1976-09-01 1978-05-23 Bell Telephone Laboratories, Incorporated Dynamic precharge circuitry
DE2843115A1 (de) * 1978-10-03 1980-04-17 Plessey Handel Investment Ag Betriebsverfahren fuer eine transistor- speichermatrix
US4291391A (en) * 1979-09-14 1981-09-22 Texas Instruments Incorporated Taper isolated random access memory array and method of operating
US4866432A (en) * 1986-04-25 1989-09-12 Exel Microelectronics, Inc. Field programmable matrix circuit for EEPROM logic cells
GB2226727B (en) * 1988-10-15 1993-09-08 Sony Corp Address decoder circuits for non-volatile memories

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1499444A (fr) * 1966-09-16 1967-10-27 Constr Telephoniques Matrice de circuits logiques intégrés
US3529299A (en) * 1966-10-21 1970-09-15 Texas Instruments Inc Programmable high-speed read-only memory devices
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3582908A (en) * 1969-03-10 1971-06-01 Bell Telephone Labor Inc Writing a read-only memory while protecting nonselected elements
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations
JPS4844585B1 (fr) * 1969-04-12 1973-12-25
US3649848A (en) * 1970-12-03 1972-03-14 Rca Corp Voltage translation circuit for mnos memory array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413804A1 (de) * 1973-05-04 1974-11-21 Ibm Schaltungsanordnung fuer eine wortorganisierte halbleiterspeichermatrix

Also Published As

Publication number Publication date
NL182922C (nl) 1988-06-01
DE2152109A1 (de) 1972-04-20
SE379444B (fr) 1975-10-06
DE2152109B2 (de) 1974-11-28
AU3466571A (en) 1973-04-19
DE2152109C3 (de) 1975-07-17
FR2111709A1 (fr) 1972-06-09
NL182922B (nl) 1988-01-04
NL7114285A (fr) 1972-04-21
GB1363509A (en) 1974-08-14
FR2111709B1 (fr) 1977-08-05
CA961159A (en) 1975-01-14
US3720925A (en) 1973-03-13
JPS523701B1 (fr) 1977-01-29

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