BE775973A - Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice - Google Patents

Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice

Info

Publication number
BE775973A
BE775973A BE775973A BE775973A BE775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A
Authority
BE
Belgium
Prior art keywords
making
insulating substrate
partly covered
semiconductor layer
substrate partly
Prior art date
Application number
BE775973A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE775973A publication Critical patent/BE775973A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
BE775973A 1970-12-01 1971-11-29 Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice BE775973A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2059116A DE2059116C3 (de) 1970-12-01 1970-12-01 Verfahren zur Herstellung eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
BE775973A true BE775973A (fr) 1972-03-16

Family

ID=5789659

Family Applications (1)

Application Number Title Priority Date Filing Date
BE775973A BE775973A (fr) 1970-12-01 1971-11-29 Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice

Country Status (7)

Country Link
BE (1) BE775973A (fr)
DE (1) DE2059116C3 (fr)
FR (1) FR2116424A1 (fr)
GB (1) GB1358438A (fr)
IT (1) IT941388B (fr)
LU (1) LU64363A1 (fr)
NL (1) NL7115760A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284981A1 (fr) * 1974-09-10 1976-04-09 Radiotechnique Compelec Procede d'obtention d'un circuit integre semiconducteur
JPS5674921A (en) 1979-11-22 1981-06-20 Toshiba Corp Manufacturing method of semiconductor and apparatus thereof
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
IN157312B (fr) * 1982-01-12 1986-03-01 Rca Corp
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
GB2142185A (en) * 1983-06-22 1985-01-09 Rca Corp Mosfet fabrication method
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4704186A (en) * 1986-02-19 1987-11-03 Rca Corporation Recessed oxide method for making a silicon-on-insulator substrate
EP0307108A1 (fr) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Méthode pour former des cristaux
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
TW205603B (fr) * 1990-09-21 1993-05-11 Anelva Corp

Also Published As

Publication number Publication date
DE2059116B2 (de) 1974-04-25
DE2059116C3 (de) 1974-11-21
DE2059116A1 (de) 1972-07-06
LU64363A1 (fr) 1972-06-19
NL7115760A (fr) 1972-06-05
GB1358438A (en) 1974-07-03
FR2116424A1 (fr) 1972-07-13
IT941388B (it) 1973-03-01

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