BE815609A - Dispositif de dopage de matiere semi-conductrice lors d'une fusion par zones sans creuset - Google Patents

Dispositif de dopage de matiere semi-conductrice lors d'une fusion par zones sans creuset

Info

Publication number
BE815609A
BE815609A BE144810A BE144810A BE815609A BE 815609 A BE815609 A BE 815609A BE 144810 A BE144810 A BE 144810A BE 144810 A BE144810 A BE 144810A BE 815609 A BE815609 A BE 815609A
Authority
BE
Belgium
Prior art keywords
crucible
zones
melting
semi
conductive material
Prior art date
Application number
BE144810A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE815609A publication Critical patent/BE815609A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE144810A 1973-05-28 1974-05-28 Dispositif de dopage de matiere semi-conductrice lors d'une fusion par zones sans creuset BE815609A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE732327085A DE2327085C3 (de) 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
BE815609A true BE815609A (fr) 1974-09-16

Family

ID=5882335

Family Applications (1)

Application Number Title Priority Date Filing Date
BE144810A BE815609A (fr) 1973-05-28 1974-05-28 Dispositif de dopage de matiere semi-conductrice lors d'une fusion par zones sans creuset

Country Status (6)

Country Link
US (1) US3908586A (fr)
JP (1) JPS5336403B2 (fr)
BE (1) BE815609A (fr)
DE (1) DE2327085C3 (fr)
DK (1) DK286274A (fr)
IT (1) IT1012869B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique
DE3518073A1 (de) * 1985-05-20 1986-11-20 Siemens AG, 1000 Berlin und 8000 München Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen
JP4934829B2 (ja) * 2007-09-06 2012-05-23 株式会社やまびこ エンジンユニット
JP4957600B2 (ja) * 2008-03-18 2012-06-20 信越半導体株式会社 Ｆｚ法による半導体結晶製造方法および半導体結晶製造装置
JP2017141130A (ja) * 2016-02-09 2017-08-17 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2550899A (en) * 1948-03-16 1951-05-01 United States Steel Corp Apparatus for cooling mill rolls
NL266156A (fr) * 1960-06-24
US3606171A (en) * 1970-03-06 1971-09-20 Walter D Voelker Injection nozzle of adjustable length

Also Published As

Publication number Publication date
JPS5336403B2 (fr) 1978-10-03
DE2327085C3 (de) 1979-03-08
US3908586A (en) 1975-09-30
JPS5020907A (fr) 1975-03-05
IT1012869B (it) 1977-03-10
DK286274A (fr) 1975-01-20
DE2327085A1 (de) 1974-12-19
DE2327085B2 (de) 1978-07-20

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