BE841352A - Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons - Google Patents

Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons

Info

Publication number
BE841352A
BE841352A BE166632A BE166632A BE841352A BE 841352 A BE841352 A BE 841352A BE 166632 A BE166632 A BE 166632A BE 166632 A BE166632 A BE 166632A BE 841352 A BE841352 A BE 841352A
Authority
BE
Belgium
Prior art keywords
neutrons
homogenous
phosphorus
irradiation
reaction
Prior art date
Application number
BE166632A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE841352A publication Critical patent/BE841352A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE166632A 1975-05-02 1976-04-30 Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons BE841352A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2519527A DE2519527C3 (de) 1975-05-02 1975-05-02 Verfahren zum Herstellen von homogen-phosphordotiertem einkristallinem Silicium durch Neutronenbestrahlung

Publications (1)

Publication Number Publication Date
BE841352A true BE841352A (fr) 1976-08-16

Family

ID=5945553

Family Applications (1)

Application Number Title Priority Date Filing Date
BE166632A BE841352A (fr) 1975-05-02 1976-04-30 Procede de reaction de silicium monocristallin a dopage de phosphore homogene par irradiation avec des neutrons

Country Status (5)

Country Link
JP (1) JPS598057B2 (fr)
BE (1) BE841352A (fr)
DE (1) DE2519527C3 (fr)
DK (1) DK189276A (fr)
IT (1) IT1060268B (fr)

Also Published As

Publication number Publication date
DE2519527C3 (de) 1982-05-13
JPS51136281A (en) 1976-11-25
IT1060268B (it) 1982-07-10
DE2519527B2 (de) 1977-05-05
JPS598057B2 (ja) 1984-02-22
DE2519527A1 (de) 1976-11-04
DK189276A (da) 1976-11-03

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SIEMENS A.G.

Effective date: 19850430