BE845291A - Procede pour realiser des structures dans des surfaces de corps solides par attaque ionique - Google Patents
Procede pour realiser des structures dans des surfaces de corps solides par attaque ioniqueInfo
- Publication number
- BE845291A BE845291A BE169897A BE169897A BE845291A BE 845291 A BE845291 A BE 845291A BE 169897 A BE169897 A BE 169897A BE 169897 A BE169897 A BE 169897A BE 845291 A BE845291 A BE 845291A
- Authority
- BE
- Belgium
- Prior art keywords
- solid body
- body surfaces
- ionic attack
- realizing
- structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4083—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2536718A DE2536718C3 (de) | 1975-08-18 | 1975-08-18 | Verfahren zur Herstellung geätzter Strukturen in Festkörperoberflächen durch Ionenätzung und Bestrahlungsmaske zur Verwendung in diesem Verfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE845291A true BE845291A (fr) | 1976-12-16 |
Family
ID=5954228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE169897A BE845291A (fr) | 1975-08-18 | 1976-08-18 | Procede pour realiser des structures dans des surfaces de corps solides par attaque ionique |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4092210A (fr) |
| JP (1) | JPS6013071B2 (fr) |
| BE (1) | BE845291A (fr) |
| CA (1) | CA1070264A (fr) |
| DE (1) | DE2536718C3 (fr) |
| FR (1) | FR2321367A1 (fr) |
| GB (1) | GB1513218A (fr) |
| IT (1) | IT1066889B (fr) |
| NL (1) | NL7609175A (fr) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4292384A (en) * | 1977-09-30 | 1981-09-29 | Horizons Research Incorporated | Gaseous plasma developing and etching process employing low voltage DC generation |
| US4180432A (en) * | 1977-12-19 | 1979-12-25 | International Business Machines Corporation | Process for etching SiO2 layers to silicon in a moderate vacuum gas plasma |
| US4226666A (en) * | 1978-08-21 | 1980-10-07 | International Business Machines Corporation | Etching method employing radiation and noble gas halide |
| US4183780A (en) * | 1978-08-21 | 1980-01-15 | International Business Machines Corporation | Photon enhanced reactive ion etching |
| US4340276A (en) | 1978-11-01 | 1982-07-20 | Minnesota Mining And Manufacturing Company | Method of producing a microstructured surface and the article produced thereby |
| JPS5565365A (en) * | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
| US4275286A (en) * | 1978-12-04 | 1981-06-23 | Hughes Aircraft Company | Process and mask for ion beam etching of fine patterns |
| US4289574A (en) * | 1979-04-30 | 1981-09-15 | Fairchild Camera & Instrument Corp. | Process for patterning metal connections on a semiconductor structure by using an aluminum oxide etch resistant layer |
| US4243476A (en) * | 1979-06-29 | 1981-01-06 | International Business Machines Corporation | Modification of etch rates by solid masking materials |
| US4259145A (en) * | 1979-06-29 | 1981-03-31 | International Business Machines Corporation | Ion source for reactive ion etching |
| EP0048291B1 (fr) * | 1980-09-19 | 1985-07-03 | Ibm Deutschland Gmbh | Structure comprenant un corps de silicium présentant une ouverture le traversant de part en part et procédé de fabrication |
| US4326936A (en) * | 1980-10-14 | 1982-04-27 | Rockwell International Corporation | Repeatable method for sloping walls of thin film material |
| JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
| US4344996A (en) * | 1980-12-19 | 1982-08-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Surface texturing of fluoropolymers |
| US4351698A (en) * | 1981-10-16 | 1982-09-28 | Memorex Corporation | Variable sloped etching of thin film heads |
| US4362598A (en) * | 1981-10-26 | 1982-12-07 | General Electric Company | Method of patterning a thick resist layer of polymeric plastic |
| US4385975A (en) * | 1981-12-30 | 1983-05-31 | International Business Machines Corp. | Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate |
| DE3221981C2 (de) * | 1982-06-11 | 1985-08-29 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe | Verfahren zum Herstellen von aus Trennkörpern mit Abschlußplatten bestehenden Trenndüsenelementen zur Trennung gas- oder dampfförmiger Gemische |
| US4496419A (en) * | 1983-02-28 | 1985-01-29 | Cornell Research Foundation, Inc. | Fine line patterning method for submicron devices |
| US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
| CA1281307C (fr) * | 1985-04-01 | 1991-03-12 | Allan R. Knoll | Methode de gravure au plasma d'un substrat avec un compose gazeux d'organohalogenure |
| US4655384A (en) * | 1985-10-18 | 1987-04-07 | The Babcock & Wilcox Company | Method of fabricating fiber-reinforced metal composites |
| GB8606821D0 (en) | 1986-03-19 | 1986-04-23 | Pa Consulting Services | Corneal reprofiling |
| US5091047A (en) * | 1986-09-11 | 1992-02-25 | National Semiconductor Corp. | Plasma etching using a bilayer mask |
| US4906594A (en) * | 1987-06-12 | 1990-03-06 | Agency Of Industrial Science And Technology | Surface smoothing method and method of forming SOI substrate using the surface smoothing method |
| US4869777A (en) * | 1988-12-16 | 1989-09-26 | Ibm Corporation | Method for selectively etching the materials of a composite of two materials |
| US4938841A (en) * | 1989-10-31 | 1990-07-03 | Bell Communications Research, Inc. | Two-level lithographic mask for producing tapered depth |
| US5275695A (en) * | 1992-12-18 | 1994-01-04 | International Business Machines Corporation | Process for generating beveled edges |
| US5804088A (en) * | 1996-07-12 | 1998-09-08 | Texas Instruments Incorporated | Intermediate layer lithography |
| US5881445A (en) * | 1997-07-30 | 1999-03-16 | Mauro; George | Method of producing micro-apertures in optically flat surfaces and structures when made by the method |
| FR2794892B1 (fr) * | 1999-06-08 | 2003-06-27 | X Ion | Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre |
| US6613243B2 (en) | 2000-07-25 | 2003-09-02 | Shipley Company, L.L.C. | Method of making a 3-D structure using an erodable mask formed from a film having a composition that varies in its direction of thickness |
| JP3671854B2 (ja) * | 2001-04-05 | 2005-07-13 | 松下電器産業株式会社 | シリコン系基板の表面処理方法 |
| US7737534B2 (en) * | 2008-06-10 | 2010-06-15 | Northrop Grumman Systems Corporation | Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer |
| CN103165416B (zh) * | 2011-12-13 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 用于刻蚀的硬掩膜及其制备方法以及mos器件的制造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
| NL7401859A (nl) * | 1974-02-12 | 1975-08-14 | Philips Nv | Werkwijze voor het vervaardigen van een patroon en of meer lagen op een ondergrond door selijk verwijderen van deze laag of lagen sputteretsen en voorwerpen, in het bijzon- alfgeleiderinrichtingen, vervaardigd met ssing van deze werkwijze. |
| US3975252A (en) * | 1975-03-14 | 1976-08-17 | Bell Telephone Laboratories, Incorporated | High-resolution sputter etching |
| US3986912A (en) * | 1975-09-04 | 1976-10-19 | International Business Machines Corporation | Process for controlling the wall inclination of a plasma etched via hole |
-
1975
- 1975-08-18 DE DE2536718A patent/DE2536718C3/de not_active Expired
-
1976
- 1976-07-16 US US05/705,785 patent/US4092210A/en not_active Expired - Lifetime
- 1976-07-20 GB GB30095/76A patent/GB1513218A/en not_active Expired
- 1976-07-26 FR FR7622729A patent/FR2321367A1/fr active Granted
- 1976-08-13 JP JP51096889A patent/JPS6013071B2/ja not_active Expired
- 1976-08-17 CA CA259,233A patent/CA1070264A/fr not_active Expired
- 1976-08-18 BE BE169897A patent/BE845291A/fr unknown
- 1976-08-18 NL NL7609175A patent/NL7609175A/xx not_active Application Discontinuation
- 1976-09-06 IT IT26095/76A patent/IT1066889B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2536718A1 (de) | 1977-02-24 |
| CA1070264A (fr) | 1980-01-22 |
| DE2536718C3 (de) | 1978-04-27 |
| JPS6013071B2 (ja) | 1985-04-04 |
| IT1066889B (it) | 1985-03-12 |
| US4092210A (en) | 1978-05-30 |
| FR2321367B1 (fr) | 1981-01-30 |
| FR2321367A1 (fr) | 1977-03-18 |
| GB1513218A (en) | 1978-06-07 |
| JPS5224946A (en) | 1977-02-24 |
| DE2536718B2 (de) | 1977-08-25 |
| NL7609175A (nl) | 1977-02-22 |
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