BE845628A - Detecteur pyro-electrique a effet de champ pour rayonnement electromagnetique - Google Patents

Detecteur pyro-electrique a effet de champ pour rayonnement electromagnetique

Info

Publication number
BE845628A
BE845628A BE170171A BE170171A BE845628A BE 845628 A BE845628 A BE 845628A BE 170171 A BE170171 A BE 170171A BE 170171 A BE170171 A BE 170171A BE 845628 A BE845628 A BE 845628A
Authority
BE
Belgium
Prior art keywords
pyro
effect
field
electromagnetic radiation
electric detector
Prior art date
Application number
BE170171A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE845628A publication Critical patent/BE845628A/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
BE170171A 1975-09-04 1976-08-27 Detecteur pyro-electrique a effet de champ pour rayonnement electromagnetique BE845628A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/610,365 US4024560A (en) 1975-09-04 1975-09-04 Pyroelectric-field effect electromagnetic radiation detector

Publications (1)

Publication Number Publication Date
BE845628A true BE845628A (fr) 1977-02-28

Family

ID=24444727

Family Applications (1)

Application Number Title Priority Date Filing Date
BE170171A BE845628A (fr) 1975-09-04 1976-08-27 Detecteur pyro-electrique a effet de champ pour rayonnement electromagnetique

Country Status (7)

Country Link
US (1) US4024560A (fr)
JP (1) JPS5232288A (fr)
BE (1) BE845628A (fr)
CA (1) CA1071743A (fr)
DE (1) DE2637623A1 (fr)
FR (1) FR2323133A1 (fr)
GB (1) GB1561904A (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1562287A (en) * 1976-03-27 1980-03-12 Marconi Co Ltd Imaging device
GB1580403A (en) * 1977-04-19 1980-12-03 Philips Electronic Associated Pyroelectric detector circuits and devices
JPS57104828A (en) * 1980-12-20 1982-06-30 Horiba Ltd Composing infrared detector
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US4464572A (en) * 1982-05-06 1984-08-07 The United States Of America As Represented By The United States Department Of Energy Infrared photoemitting diode having reduced work function
US4501967A (en) * 1982-11-18 1985-02-26 North American Philips Corporation Broad band pyroelectric infrared detector
US4698657A (en) * 1984-02-10 1987-10-06 Sharp Kabushiki Kaisha FET type sensor and a method for driving the same
JPH0752124B2 (ja) * 1985-06-26 1995-06-05 松下電器産業株式会社 赤外線検出素子
JP2599354B2 (ja) * 1985-06-27 1997-04-09 松下電器産業株式会社 赤外線検出素子
DE3617910A1 (de) * 1986-05-28 1987-12-03 Siemens Ag Matrixsensor
KR910001878B1 (ko) * 1986-12-16 1991-03-28 가부시기가이샤 시마즈세이사구쇼 열센서 및 그 제조방법
US4804844A (en) * 1987-09-03 1989-02-14 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for enhancement of primary pyroelectric response
CH676523A5 (fr) * 1988-06-01 1991-01-31 Cerberus Ag
DE3823901A1 (de) * 1988-07-14 1990-02-01 Bernd Dr Rer Nat Ploss Verfahren zur herstellung ferroelektrischer festkoerperbauelemente
US5273910A (en) * 1990-08-08 1993-12-28 Minnesota Mining And Manufacturing Company Method of making a solid state electromagnetic radiation detector
US5182624A (en) * 1990-08-08 1993-01-26 Minnesota Mining And Manufacturing Company Solid state electromagnetic radiation detector fet array
GB2250751B (en) * 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
FR2670325B1 (fr) * 1990-12-11 1993-01-22 Thomson Composants Militaires Detecteur infrarouge monolithique a materiau pyroelectrique.
JP3831524B2 (ja) * 1998-06-26 2006-10-11 株式会社堀場製作所 赤外線ガス分析計用流量検出素子とその製造方法
EP1098362B1 (fr) * 1998-06-19 2007-05-09 Matsushita Electric Industrial Co., Ltd. Procede et dispositif servant a creer des protuberances
US6821787B2 (en) * 2000-11-17 2004-11-23 Thermogenic Imaging, Inc. Apparatus and methods for infrared calorimetric measurements
US20020132360A1 (en) * 2000-11-17 2002-09-19 Flir Systems Boston, Inc. Apparatus and methods for infrared calorimetric measurements
US20040110301A1 (en) * 2000-11-17 2004-06-10 Neilson Andy C Apparatus and methods for measuring reaction byproducts
US6657358B2 (en) * 2001-06-26 2003-12-02 Hewlett-Packard Development Company, L.P. Power supply including pyroelectric capacitor
JP2003031579A (ja) * 2001-07-18 2003-01-31 Denso Corp センサ及びその製造方法
US7439555B2 (en) * 2003-12-05 2008-10-21 International Rectifier Corporation III-nitride semiconductor device with trench structure
US9223186B2 (en) * 2009-02-26 2015-12-29 Corning Incorporated Frequency converted laser sources and methods for operating frequency converted laser sources
FR2959657B1 (fr) * 2010-05-06 2012-06-22 Commissariat Energie Atomique Transducteur de variation temporelle de température, puce électronique incorporant ce transducteur et procédé de fabrication de cette puce
TW201216363A (en) * 2010-10-01 2012-04-16 Univ Nat Chiao Tung Dielectric structure, transistor and manufacturing method thereof with praseodymium oxide
JP5533638B2 (ja) * 2010-12-24 2014-06-25 セイコーエプソン株式会社 検出装置、センサーデバイス及び電子機器
JP2012134415A (ja) * 2010-12-24 2012-07-12 Seiko Epson Corp 検出装置、センサーデバイス及び電子機器
CN109786498B (zh) * 2018-12-10 2021-04-06 华南理工大学 一种基于二维半导体材料的红外探测元件及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
DE1514495C3 (de) * 1965-07-01 1974-10-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung
US3453887A (en) * 1967-02-08 1969-07-08 Corning Glass Works Temperature change measuring device
US3450966A (en) * 1967-09-12 1969-06-17 Rca Corp Ferroelectric insulated gate field effect device

Also Published As

Publication number Publication date
DE2637623A1 (de) 1977-03-17
CA1071743A (fr) 1980-02-12
GB1561904A (en) 1980-03-05
FR2323133A1 (fr) 1977-04-01
JPS5232288A (en) 1977-03-11
US4024560A (en) 1977-05-17

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