BE847450A - Detecteur de radiations nucleaires a jonction diffusee profonde, - Google Patents

Detecteur de radiations nucleaires a jonction diffusee profonde,

Info

Publication number
BE847450A
BE847450A BE171641A BE171641A BE847450A BE 847450 A BE847450 A BE 847450A BE 171641 A BE171641 A BE 171641A BE 171641 A BE171641 A BE 171641A BE 847450 A BE847450 A BE 847450A
Authority
BE
Belgium
Prior art keywords
detector
nuclear radiation
diffused junction
deep diffused
radiation detector
Prior art date
Application number
BE171641A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE847450A publication Critical patent/BE847450A/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
BE171641A 1975-10-20 1976-10-20 Detecteur de radiations nucleaires a jonction diffusee profonde, BE847450A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/623,974 US4060432A (en) 1975-10-20 1975-10-20 Method for manufacturing nuclear radiation detector with deep diffused junction

Publications (1)

Publication Number Publication Date
BE847450A true BE847450A (fr) 1977-02-14

Family

ID=24500096

Family Applications (1)

Application Number Title Priority Date Filing Date
BE171641A BE847450A (fr) 1975-10-20 1976-10-20 Detecteur de radiations nucleaires a jonction diffusee profonde,

Country Status (7)

Country Link
US (2) US4060432A (fr)
JP (1) JPS5259591A (fr)
BE (1) BE847450A (fr)
DE (1) DE2646773A1 (fr)
FR (1) FR2329073A1 (fr)
GB (1) GB1562990A (fr)
IL (1) IL50583A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
CH655201A5 (de) * 1981-09-18 1986-03-27 Bbc Brown Boveri & Cie Elektronisches bauelement bestehend aus einer elektronenkanone und einer halbleiterdiode.
DE3571726D1 (en) * 1984-04-25 1989-08-24 Josef Kemmer Large-surface low-capacity semi-conductor radiation detector
US10048389B1 (en) * 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2725316A (en) * 1953-05-18 1955-11-29 Bell Telephone Labor Inc Method of preparing pn junctions in semiconductors
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US3116183A (en) * 1958-05-15 1963-12-31 Gen Electric Asymmetrically conductive device
US3036234A (en) * 1959-09-28 1962-05-22 Bell Telephone Labor Inc Electron discharge devices employing secondary electron emission
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3293511A (en) * 1963-08-21 1966-12-20 Int Rectifier Corp Field effect transistor with concentric interior electrode
US3374124A (en) * 1965-01-07 1968-03-19 Ca Atomic Energy Ltd Method of making lithium-drift diodes by diffusion
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device
US3461005A (en) * 1967-09-01 1969-08-12 Atomic Energy Commission P-contact for compensated p-germanium crystal
US3826721A (en) * 1972-10-24 1974-07-30 Gen Electric Method of forming lithium-doped germanium bodies by electrodeposition in a fused lithium electrolyte
US3795547A (en) * 1972-12-13 1974-03-05 Gen Electric Method of improving electrical characteristics of high purity germanium or silicon
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices

Also Published As

Publication number Publication date
GB1562990A (en) 1980-03-19
FR2329073A1 (fr) 1977-05-20
US4157559A (en) 1979-06-05
US4060432A (en) 1977-11-29
IL50583A (en) 1979-11-30
JPS5259591A (en) 1977-05-17
DE2646773A1 (de) 1977-04-21

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