BE855219A - SCHOTTKY TRANSISTOR LOGIC CIRCUIT - Google Patents

SCHOTTKY TRANSISTOR LOGIC CIRCUIT

Info

Publication number
BE855219A
BE855219A BE178054A BE178054A BE855219A BE 855219 A BE855219 A BE 855219A BE 178054 A BE178054 A BE 178054A BE 178054 A BE178054 A BE 178054A BE 855219 A BE855219 A BE 855219A
Authority
BE
Belgium
Prior art keywords
logic circuit
transistor logic
schottky transistor
schottky
circuit
Prior art date
Application number
BE178054A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE855219A publication Critical patent/BE855219A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
BE178054A 1976-05-31 1977-05-31 SCHOTTKY TRANSISTOR LOGIC CIRCUIT BE855219A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2624339A DE2624339C2 (en) 1976-05-31 1976-05-31 Schottky transistor logic

Publications (1)

Publication Number Publication Date
BE855219A true BE855219A (en) 1977-09-16

Family

ID=5979416

Family Applications (1)

Application Number Title Priority Date Filing Date
BE178054A BE855219A (en) 1976-05-31 1977-05-31 SCHOTTKY TRANSISTOR LOGIC CIRCUIT

Country Status (2)

Country Link
BE (1) BE855219A (en)
DE (1) DE2624339C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230050A1 (en) * 1982-08-12 1984-02-16 Siemens AG, 1000 Berlin und 8000 München INTEGRATED SEMICONDUCTOR CIRCUIT WITH BIPOLAR COMPONENTS AND METHOD FOR THE PRODUCTION THEREOF
US4947230A (en) * 1984-09-14 1990-08-07 Fairchild Camera & Instrument Corp. Base-coupled transistor logic

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262297C2 (en) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithically integrable, logically linkable semiconductor circuit arrangement with I → 2 → L structure
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors

Also Published As

Publication number Publication date
DE2624339A1 (en) 1977-12-15
DE2624339C2 (en) 1986-09-11

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