Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
  • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• Semiconductor Memories (AREA)
• Read Only Memory (AREA)
• Non-Volatile Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19827917

Family Applications (1)

Country Status (14)

Families Citing this family (11)

Family Cites Families (2)

• 1977
  • 1977-02-04 NL NL7701172A patent/NL7701172A/xx not_active Application Discontinuation
  • 1977-07-11 US US05/814,650 patent/US4161741A/en not_active Expired - Lifetime
• 1978
  • 1978-02-01 DD DD78203514A patent/DD137161A5/xx unknown
  • 1978-02-01 GB GB4035/78A patent/GB1594562A/en not_active Expired
  • 1978-02-01 IT IT19890/78A patent/IT1092499B/it active
  • 1978-02-01 SE SE7801169A patent/SE7801169L/xx unknown
  • 1978-02-01 BR BR7800627A patent/BR7800627A/pt unknown
  • 1978-02-02 ES ES466564A patent/ES466564A1/es not_active Expired
  • 1978-02-02 BE BE184857A patent/BE863591A/fr unknown
  • 1978-02-02 AU AU32945/78A patent/AU512104B2/en not_active Expired
  • 1978-02-02 DE DE2804412A patent/DE2804412C3/de not_active Expired
  • 1978-02-03 JP JP53010642A patent/JPS5846064B2/ja not_active Expired
  • 1978-02-04 RO RO7893100A patent/RO76120A/fr unknown
  • 1978-02-06 FR FR7803218A patent/FR2379877B1/fr not_active Expired

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