Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
  • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B10/00—Static random access memory [SRAM] devices

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Semiconductor Memories (AREA)
• Solid State Image Pick-Up Elements (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=6015208

Family Applications (1)

Country Status (9)

Families Citing this family (9)

• 1977
  • 1977-07-29 DE DE19772734354 patent/DE2734354A1/de not_active Withdrawn
• 1978
  • 1978-07-07 FR FR7820291A patent/FR2399097A1/fr not_active Withdrawn
  • 1978-07-07 US US05/922,747 patent/US4224635A/en not_active Expired - Lifetime
  • 1978-07-17 IT IT25762/78A patent/IT1097163B/it active
  • 1978-07-26 JP JP9138578A patent/JPS5426671A/ja active Pending
  • 1978-07-28 GB GB787831479A patent/GB2001801B/en not_active Expired
  • 1978-07-28 BE BE189588A patent/BE869373A/xx unknown
  • 1978-07-28 NL NL7808029A patent/NL7808029A/xx not_active Application Discontinuation
  • 1978-07-28 CA CA308,358A patent/CA1124858A/en not_active Expired

Also Published As

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