BE893064A - Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat - Google Patents

Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat

Info

Publication number
BE893064A
BE893064A BE0/207997A BE207997A BE893064A BE 893064 A BE893064 A BE 893064A BE 0/207997 A BE0/207997 A BE 0/207997A BE 207997 A BE207997 A BE 207997A BE 893064 A BE893064 A BE 893064A
Authority
BE
Belgium
Prior art keywords
substrate
thin film
film coating
gas plasma
active gas
Prior art date
Application number
BE0/207997A
Other languages
English (en)
Inventor
J L Van Cakenberghe
Original Assignee
Optical Coating Laboratory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Coating Laboratory Inc filed Critical Optical Coating Laboratory Inc
Publication of BE893064A publication Critical patent/BE893064A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/02—Plasma welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K9/00—Arc welding or cutting
    • B23K9/23—Arc welding or cutting taking account of the properties of the materials to be welded
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
BE0/207997A 1981-05-04 1982-05-04 Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat BE893064A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26035981A 1981-05-04 1981-05-04

Publications (1)

Publication Number Publication Date
BE893064A true BE893064A (fr) 1982-08-30

Family

ID=22988848

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/207997A BE893064A (fr) 1981-05-04 1982-05-04 Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat

Country Status (5)

Country Link
EP (1) EP0064288A1 (fr)
JP (1) JPS57206021A (fr)
KR (1) KR830010218A (fr)
AU (1) AU8288282A (fr)
BE (1) BE893064A (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833829A (ja) * 1981-08-24 1983-02-28 Toshiba Corp 薄膜形成装置
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
JPS60130572A (ja) * 1983-12-15 1985-07-12 Sumitomo Chem Co Ltd ５−（ｐ−ニトロフエニル）テトラゾ−ル誘導体
FR2579486B1 (fr) * 1985-03-26 1989-05-26 Canon Kk Procede pour regler la vitesse de particules fines
FR2579487B1 (fr) * 1985-03-26 1989-05-12 Canon Kk Appareil pour reguler l'ecoulement de particules fines
CA1272662A (fr) * 1985-03-26 1990-08-14 Canon Kabushiki Kaisha Methode et dispositif de controle du debit de fines particules
FR2579488B1 (fr) * 1985-03-26 1989-05-19 Canon Kk Procede pour regler la densite de particules fines
CA1272661A (fr) * 1985-05-11 1990-08-14 Yuji Chiba Appareil reacteur
GB2180262B (en) * 1985-09-05 1990-05-09 Plessey Co Plc Methods of forming substances on substrates by reactive sputtering
KR910009841B1 (ko) * 1985-09-30 1991-11-30 유니온 카바이드 코포레이션 진공챔버중에서 피막을 아아크 증착하기 위한 방법 및 장치
GB2185129B (en) * 1985-11-15 1989-10-11 Canon Kk Flow control device for fine particle stream
US4882198A (en) * 1986-11-26 1989-11-21 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US4963524A (en) * 1987-09-24 1990-10-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering device for manufacturing superconducting oxide material and method therefor
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
GB2343992B (en) * 1998-11-20 2001-06-20 Michael John Thwaites High density plasmas
US6463873B1 (en) 2000-04-04 2002-10-15 Plasma Quest Limited High density plasmas
WO2004095498A2 (fr) * 2003-04-22 2004-11-04 Zond,Inc Source de plasma a densite elevee employant des atomes excites
EP3993991B1 (fr) 2019-07-01 2025-05-21 Saint-Gobain Performance Plastics Corporation Raccordement de profilés
EP4072832B1 (fr) * 2019-12-12 2026-03-04 Saint-Gobain Performance Plastics Corporation Appareil de soudage stérilisé
KR102927869B1 (ko) 2020-03-20 2026-02-20 생-고뱅 퍼포먼스 플라스틱스 코포레이션 멸균 밀봉 장치
CN113498245B (zh) * 2020-04-08 2024-03-12 西北核技术研究院 适用于负氢粒子束的中性化气体靶单元及系统设计方法
EP4171920A4 (fr) 2020-06-19 2024-11-06 Saint-Gobain Performance Plastics Corporation Article composite et procédé de formation d'un article composite
US11658006B2 (en) 2021-01-14 2023-05-23 Applied Materials, Inc. Plasma sources and plasma processing apparatus thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
JPS5244174A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Plasma treatment device

Also Published As

Publication number Publication date
KR830010218A (ko) 1983-12-26
EP0064288A1 (fr) 1982-11-10
JPS57206021A (en) 1982-12-17
AU8288282A (en) 1982-11-11

Similar Documents

Publication Publication Date Title
BE883632A (fr) Procede et appareil de pulverisation de matiere sur un substrat a l'arc plasma.
CA2110250A1 (fr) Deposition de differents materiaux sur un substrat
EP0060627A3 (en) Apparatus for regulating substrate temperature in a continuous plasma deposition process
AU3058789A (en) Method for obtaining transverse uniformity during thin film deposition on extended substrate
CA2214546A1 (fr) Methode et appareil de fabrication automatisee et a taux eleve de couches minces
FR2738393B1 (fr) Substrat d'affichage a plasma et procede pour sa fabrication
FR2549461B1 (fr) Procede de production d'un film depose contenant du silicium
BE874614A (fr) Procede de depot d'un revetement sur du verre
AU3745689A (en) Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
GB2028380B (en) Method and apparatus for regulating the evaporation rate in reactive vacuum deposition processes
CA2190231A1 (fr) Methode et appareil de revetement d'une substance par une pellicule de diamant synthetique
GB2208390B (en) Thin film deposition process
FR2545818B1 (fr) Procede et dispositif de formation d'un revetement de compose metallique sur un substrat chaud en matiere vitreuse
CA2027067A1 (fr) Methode de deposition d'une couche oxyde continue supraconductrice a sections d'epaisseurs diverses pour dispositif supraconducteur
FR2557149B1 (fr) Procede et dispositif pour le depot, sur un support, d'une couche mince d'un materiau a partir d'un plasma reactif
FR2695511B1 (fr) Pile solaire en film mince, procédé pour sa production, procédé de production d'un lingot semi-conducteur et procédé de production d'un substrat semi-conducteur.
GB8707322D0 (en) Thin film deposition process
DE3276439D1 (en) Process for depositing films on both sides of a plurality of thin substrates
EP0132322A3 (fr) Dispositif de craquage thermique pour l'obtention de films de pnicture dans des procédés sous vide élevé
GB8802942D0 (en) Methods & apparatus for depositing thin films
EP0341148A3 (en) A semiconductor substrate having a superconducting thin film, and a process for producing the same
FR2666032B1 (fr) Procede pour appliquer un revetement sur un substrat, dispositif pour la mise en óoeuvre du procede et revetement obtenu par le procede.
AU606287B2 (en) A superconducting thin film and a process for depositing the same
DE3069815D1 (en) Method and apparatus for pretreating a substrate, method and apparatus for pretreating a substrate and depositing a thin metallic film thereon
GB8819752D0 (en) Apparatus & method for depositing surface layers on substrates

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: OPTICAL COATING LABORATORY INC.

Effective date: 19860531