BE893064A - Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat - Google Patents
Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substratInfo
- Publication number
- BE893064A BE893064A BE0/207997A BE207997A BE893064A BE 893064 A BE893064 A BE 893064A BE 0/207997 A BE0/207997 A BE 0/207997A BE 207997 A BE207997 A BE 207997A BE 893064 A BE893064 A BE 893064A
- Authority
- BE
- Belgium
- Prior art keywords
- substrate
- thin film
- film coating
- gas plasma
- active gas
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000000151 deposition Methods 0.000 title 1
- 238000009501 film coating Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/02—Plasma welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/23—Arc welding or cutting taking account of the properties of the materials to be welded
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26035981A | 1981-05-04 | 1981-05-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE893064A true BE893064A (fr) | 1982-08-30 |
Family
ID=22988848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/207997A BE893064A (fr) | 1981-05-04 | 1982-05-04 | Procede et appareil de production d'un plasma gazeux active, et procede et appareil pour deposer de facon reactive un revetement en couches minces sur un substrat |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0064288A1 (fr) |
| JP (1) | JPS57206021A (fr) |
| KR (1) | KR830010218A (fr) |
| AU (1) | AU8288282A (fr) |
| BE (1) | BE893064A (fr) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833829A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 薄膜形成装置 |
| JPS59207631A (ja) * | 1983-05-11 | 1984-11-24 | Semiconductor Res Found | 光化学を用いたドライプロセス装置 |
| JPS60130572A (ja) * | 1983-12-15 | 1985-07-12 | Sumitomo Chem Co Ltd | 5−(p−ニトロフエニル)テトラゾ−ル誘導体 |
| CA1272662A (fr) * | 1985-03-26 | 1990-08-14 | Canon Kabushiki Kaisha | Methode et dispositif de controle du debit de fines particules |
| FR2579488B1 (fr) * | 1985-03-26 | 1989-05-19 | Canon Kk | Procede pour regler la densite de particules fines |
| FR2579487B1 (fr) * | 1985-03-26 | 1989-05-12 | Canon Kk | Appareil pour reguler l'ecoulement de particules fines |
| FR2579486B1 (fr) * | 1985-03-26 | 1989-05-26 | Canon Kk | Procede pour regler la vitesse de particules fines |
| CA1272661A (fr) * | 1985-05-11 | 1990-08-14 | Yuji Chiba | Appareil reacteur |
| GB2180262B (en) * | 1985-09-05 | 1990-05-09 | Plessey Co Plc | Methods of forming substances on substrates by reactive sputtering |
| KR910009841B1 (ko) * | 1985-09-30 | 1991-11-30 | 유니온 카바이드 코포레이션 | 진공챔버중에서 피막을 아아크 증착하기 위한 방법 및 장치 |
| FR2591002B1 (fr) * | 1985-11-15 | 1995-10-27 | Canon Kk | Dispositif de commande d'ecoulement pour un courant de particules fines |
| US4882198A (en) * | 1986-11-26 | 1989-11-21 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
| US4963524A (en) * | 1987-09-24 | 1990-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering device for manufacturing superconducting oxide material and method therefor |
| US4951604A (en) * | 1989-02-17 | 1990-08-28 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
| GB2343992B (en) * | 1998-11-20 | 2001-06-20 | Michael John Thwaites | High density plasmas |
| US6463873B1 (en) | 2000-04-04 | 2002-10-15 | Plasma Quest Limited | High density plasmas |
| WO2004095498A2 (fr) * | 2003-04-22 | 2004-11-04 | Zond,Inc | Source de plasma a densite elevee employant des atomes excites |
| US11904552B2 (en) | 2019-07-01 | 2024-02-20 | Saint-Gobain Performance Plastics Corporation | Profile connection |
| CN114761210A (zh) * | 2019-12-12 | 2022-07-15 | 美国圣戈班性能塑料公司 | 用于灭菌焊接的设备 |
| EP4121277A4 (fr) | 2020-03-20 | 2024-04-10 | Saint-Gobain Performance Plastics Corporation | Appareil de fermeture hermétique stérile |
| CN113498245B (zh) * | 2020-04-08 | 2024-03-12 | 西北核技术研究院 | 适用于负氢粒子束的中性化气体靶单元及系统设计方法 |
| EP4171920A4 (fr) | 2020-06-19 | 2024-11-06 | Saint-Gobain Performance Plastics Corporation | Article composite et procédé de formation d'un article composite |
| US11658006B2 (en) | 2021-01-14 | 2023-05-23 | Applied Materials, Inc. | Plasma sources and plasma processing apparatus thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
| JPS5244174A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Plasma treatment device |
-
1982
- 1982-04-21 AU AU82882/82A patent/AU8288282A/en not_active Abandoned
- 1982-04-30 JP JP57073242A patent/JPS57206021A/ja active Pending
- 1982-04-30 EP EP82103729A patent/EP0064288A1/fr not_active Withdrawn
- 1982-05-04 BE BE0/207997A patent/BE893064A/fr not_active IP Right Cessation
- 1982-05-04 KR KR1019820001981A patent/KR830010218A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| AU8288282A (en) | 1982-11-11 |
| EP0064288A1 (fr) | 1982-11-10 |
| JPS57206021A (en) | 1982-12-17 |
| KR830010218A (ko) | 1983-12-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: OPTICAL COATING LABORATORY INC. Effective date: 19860531 |