BR0207200A - Substratos de tântalo/silìcio e nióbio/silìcio para anodos de capacitor - Google Patents

Substratos de tântalo/silìcio e nióbio/silìcio para anodos de capacitor

Info

Publication number
BR0207200A
BR0207200A BR0207200-9A BR0207200A BR0207200A BR 0207200 A BR0207200 A BR 0207200A BR 0207200 A BR0207200 A BR 0207200A BR 0207200 A BR0207200 A BR 0207200A
Authority
BR
Brazil
Prior art keywords
silicon
substrates
niobium
tantalum
capacitor anodes
Prior art date
Application number
BR0207200-9A
Other languages
English (en)
Inventor
Leah Simkins
Anastasia Conlon
Original Assignee
Starck H C Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Inc filed Critical Starck H C Inc
Publication of BR0207200A publication Critical patent/BR0207200A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

"SUBSTRATOS DE TâNTALO/SILìCIO E NIóBIO/SILìCIO PARA ANODOS DE CAPACITOR". A presente invenção refere-se a ligas de Ta-Si, Nb-Si, TaN-Si, NbN-Si e variantes que são usadas como aperfeiçoados substratos de anodo em pó para anodos de capacitor eletrolítico (massas em pó sinterizadas), com formação de óxido dielétrico nas paredes dos poros internos.
BR0207200-9A 2001-02-12 2002-02-12 Substratos de tântalo/silìcio e nióbio/silìcio para anodos de capacitor BR0207200A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26837801P 2001-02-12 2001-02-12
PCT/US2002/004073 WO2002064858A1 (en) 2001-02-12 2002-02-12 Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Publications (1)

Publication Number Publication Date
BR0207200A true BR0207200A (pt) 2004-01-27

Family

ID=23022730

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0207200-9A BR0207200A (pt) 2001-02-12 2002-02-12 Substratos de tântalo/silìcio e nióbio/silìcio para anodos de capacitor

Country Status (12)

Country Link
EP (1) EP1370716A4 (pt)
JP (1) JP2004518818A (pt)
KR (1) KR20030086593A (pt)
CN (1) CN1327035C (pt)
AU (1) AU2002243956B2 (pt)
BR (1) BR0207200A (pt)
CA (1) CA2438246A1 (pt)
CZ (1) CZ20032169A3 (pt)
IL (1) IL157273A0 (pt)
MX (1) MXPA03007171A (pt)
RU (1) RU2003127948A (pt)
WO (1) WO2002064858A1 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030086593A (ko) * 2001-02-12 2003-11-10 에이치. 씨. 스타아크 아이앤씨 커패시터 애노드용 탄탈-규소 및 니오븀-규소 기재
ATE554490T1 (de) * 2003-11-10 2012-05-15 Showa Denko Kk Niobpulver für einen kondensator, niob- gesinterter körper und kondensator
CN1913523A (zh) * 2005-08-09 2007-02-14 华为技术有限公司 实现层级化虚拟私有交换业务的方法
GB2450669B (en) * 2006-05-05 2012-03-21 Cabot Corp Tantalam powder and methods of manufacturing same
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1165510A (en) * 1968-12-13 1969-10-01 Standard Telephones Cables Ltd Solid Electrolytic Capacitors
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
CN1010447B (zh) * 1987-06-17 1990-11-14 北京有色金属研究总院 固体电解电容器制造方法
US4957541A (en) * 1988-11-01 1990-09-18 Nrc, Inc. Capacitor grade tantalum powder
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
KR100240649B1 (ko) * 1996-11-07 2000-02-01 정선종 삼원계 확산 방지막 형성 방법
US6576069B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
JP3667531B2 (ja) * 1998-07-07 2005-07-06 松下電器産業株式会社 電解コンデンサの製造方法
KR20030086593A (ko) * 2001-02-12 2003-11-10 에이치. 씨. 스타아크 아이앤씨 커패시터 애노드용 탄탈-규소 및 니오븀-규소 기재

Also Published As

Publication number Publication date
CZ20032169A3 (cs) 2004-03-17
AU2002243956B2 (en) 2007-08-02
CA2438246A1 (en) 2002-08-22
JP2004518818A (ja) 2004-06-24
IL157273A0 (en) 2004-02-19
CN1491298A (zh) 2004-04-21
EP1370716A1 (en) 2003-12-17
MXPA03007171A (es) 2005-02-14
EP1370716A4 (en) 2007-08-08
RU2003127948A (ru) 2005-03-27
CN1327035C (zh) 2007-07-18
KR20030086593A (ko) 2003-11-10
WO2002064858A1 (en) 2002-08-22

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A E 8A ANUIDADES

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 DA RPI 2055 DE 25/05/2010.