BR8401496A - Processo para impedir curtos-circuitos ou derivacoes em uma celula solar de camada fina de grande area - Google Patents

Processo para impedir curtos-circuitos ou derivacoes em uma celula solar de camada fina de grande area

Info

Publication number
BR8401496A
BR8401496A BR8401496A BR8401496A BR8401496A BR 8401496 A BR8401496 A BR 8401496A BR 8401496 A BR8401496 A BR 8401496A BR 8401496 A BR8401496 A BR 8401496A BR 8401496 A BR8401496 A BR 8401496A
Authority
BR
Brazil
Prior art keywords
derivations
circuits
solar cell
prevent short
fine layer
Prior art date
Application number
BR8401496A
Other languages
English (en)
Inventor
Gert Dr Hewig
Original Assignee
Nukem Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nukem Gmbh filed Critical Nukem Gmbh
Publication of BR8401496A publication Critical patent/BR8401496A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options
BR8401496A 1983-04-02 1984-03-30 Processo para impedir curtos-circuitos ou derivacoes em uma celula solar de camada fina de grande area BR8401496A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3312053A DE3312053C2 (de) 1983-04-02 1983-04-02 Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle

Publications (1)

Publication Number Publication Date
BR8401496A true BR8401496A (pt) 1984-11-13

Family

ID=6195372

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8401496A BR8401496A (pt) 1983-04-02 1984-03-30 Processo para impedir curtos-circuitos ou derivacoes em uma celula solar de camada fina de grande area

Country Status (6)

Country Link
US (1) US4544797A (pt)
EP (1) EP0121869B1 (pt)
AU (1) AU558763B2 (pt)
BR (1) BR8401496A (pt)
DE (2) DE3312053C2 (pt)
ES (1) ES531162A0 (pt)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213910B1 (en) * 1985-08-24 1994-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
EP0236936A3 (de) * 1986-03-11 1989-03-29 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
EP0236938A3 (de) * 1986-03-11 1989-11-15 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
US5055416A (en) * 1988-12-07 1991-10-08 Minnesota Mining And Manufacturing Company Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces
US4953577A (en) * 1989-07-06 1990-09-04 Solarex Corporation Spray encapsulation of photovoltaic modules
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
AU4695096A (en) * 1995-01-06 1996-07-24 National Aeronautics And Space Administration - Nasa Minority carrier device
US6921912B2 (en) 2003-06-03 2005-07-26 Micron Technology, Inc. Diode/superionic conductor/polymer memory structure
CN102292827A (zh) * 2009-01-22 2011-12-21 纳幕尔杜邦公司 用于太阳能电池模块的包含螯合剂的聚(乙烯醇缩丁醛)包封剂
KR20130136739A (ko) * 2012-06-05 2013-12-13 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US9153729B2 (en) 2012-11-26 2015-10-06 International Business Machines Corporation Atomic layer deposition for photovoltaic devices
US8889466B2 (en) * 2013-04-12 2014-11-18 International Business Machines Corporation Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880633A (en) * 1974-01-08 1975-04-29 Baldwin Co D H Method of coating a glass ribbon on a liquid float bath
DE2445548A1 (de) * 1974-09-24 1976-04-01 Baldwin Co D H Photoelement
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4166918A (en) * 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4343830A (en) * 1980-11-13 1982-08-10 Motorola, Inc. Method for improving the efficiency of solar cells having imperfections
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes

Also Published As

Publication number Publication date
ES8501569A1 (es) 1984-12-01
EP0121869A1 (de) 1984-10-17
DE3460853D1 (en) 1986-11-06
AU558763B2 (en) 1987-02-05
US4544797A (en) 1985-10-01
DE3312053C2 (de) 1985-03-28
EP0121869B1 (de) 1986-10-01
AU2612084A (en) 1984-10-04
ES531162A0 (es) 1984-12-01
DE3312053A1 (de) 1984-10-11

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