BR9906873A - Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados - Google Patents
Eletrodeposição de metais em pequenos recessos usando campos elétricos moduladosInfo
- Publication number
- BR9906873A BR9906873A BR9906873-7A BR9906873A BR9906873A BR 9906873 A BR9906873 A BR 9906873A BR 9906873 A BR9906873 A BR 9906873A BR 9906873 A BR9906873 A BR 9906873A
- Authority
- BR
- Brazil
- Prior art keywords
- pulses
- substrate
- micrometers
- metals
- electric fields
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/10—Configurations of laterally-adjacent chips
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Patente de Invenção: "ELETRODEPOSIçãO DE METAIS EM PEQUENOS RECESSOS UTILIZANDO CAMPOS ELéTRICOS MODULADOS". Uma camada de um metal é eletrogalvanizada sobre um substrato eletricamente condutor possuindo uma superfície geralmente lisa com um pequeno recesso na mesma, possuindo uma dimensão transversal não maior do que cerca de 350 micrometros, tipicamente cerca de 5 micrometros a cerca de 350 micrometros, pela imersão do substrato e um contraeletrodo em um banho de eletrogalvanização do metal a ser eletrogalvanizado e passando uma corrente elétrica de reversão modulada entre os eletrodos. A corrente contém pulsos que são catódicos com relação ao substrato e pulsos que são anódicos com relação ao substrato. Os pulsos catódicos possuem um ciclo de trabalho menor do que cerca de 50% e os pulsos anódicos possuem um ciclo de trabalho maior do que cerca de 50%, a taxa de transferência de carga dos pulsos catódicos para os pulsos anódicos é maior do que um, e a freq³ência dos pulsos varia de cerca de 10 Hertz a cerca de 12000 Hertz.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/172,299 US6203684B1 (en) | 1998-10-14 | 1998-10-14 | Pulse reverse electrodeposition for metallization and planarization of a semiconductor substrates |
| US09/239,811 US6210555B1 (en) | 1999-01-29 | 1999-01-29 | Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating |
| PCT/US1999/023653 WO2000022193A2 (en) | 1998-10-14 | 1999-10-14 | Electrodeposition of metals in small recesses using modulated electric fields |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR9906873A true BR9906873A (pt) | 2002-01-02 |
Family
ID=26867931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR9906873-7A BR9906873A (pt) | 1998-10-14 | 1999-10-14 | Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6303014B1 (pt) |
| EP (1) | EP1070159A4 (pt) |
| JP (1) | JP2002527621A (pt) |
| KR (1) | KR20010033089A (pt) |
| CN (1) | CN1180133C (pt) |
| AU (1) | AU765242B2 (pt) |
| BR (1) | BR9906873A (pt) |
| CA (1) | CA2314109A1 (pt) |
| MX (1) | MXPA00005871A (pt) |
| WO (1) | WO2000022193A2 (pt) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878259B2 (en) * | 1998-10-14 | 2005-04-12 | Faraday Technology Marketing Group, Llc | Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates |
| US6534116B2 (en) | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
| US6582578B1 (en) | 1999-04-08 | 2003-06-24 | Applied Materials, Inc. | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| US6913680B1 (en) | 2000-05-02 | 2005-07-05 | Applied Materials, Inc. | Method of application of electrical biasing to enhance metal deposition |
| JP2004513221A (ja) | 2000-05-23 | 2004-04-30 | アプライド マテリアルズ インコーポレイテッド | 銅シード層の異常を克服し表面形状サイズ及びアスペクト比を調整する方法と装置 |
| US6858121B2 (en) | 2000-08-10 | 2005-02-22 | Nutool, Inc. | Method and apparatus for filling low aspect ratio cavities with conductive material at high rate |
| US6921551B2 (en) | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
| EP1325516A4 (en) * | 2000-09-18 | 2007-06-06 | Acm Res Inc | INTEGRATION OF METAL WITH DIELECTRICS WITH ULTRANOWED K |
| EP1470268A2 (en) * | 2000-10-03 | 2004-10-27 | Applied Materials, Inc. | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
| GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
| JP4364420B2 (ja) * | 2000-10-31 | 2009-11-18 | エスアイアイ・ナノテクノロジー株式会社 | 垂直エッジのサブミクロン貫通孔を形成する方法 |
| US20040170753A1 (en) * | 2000-12-18 | 2004-09-02 | Basol Bulent M. | Electrochemical mechanical processing using low temperature process environment |
| US7172497B2 (en) * | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
| AU2002248343A1 (en) * | 2001-01-12 | 2002-08-19 | University Of Rochester | Methods and systems for electro-or electroless-plating of metal in high-aspect ratio features |
| IL141118A0 (en) * | 2001-01-25 | 2002-02-10 | Cerel Ceramics Technologies Lt | A method for the implementation of electronic components in via-holes of a multi-layer multi-chip module |
| US20020139684A1 (en) * | 2001-04-02 | 2002-10-03 | Mitsubishi Denki Kabushiki Kaisha | Plating system, plating method, method of manufacturing semiconductor device using the same, and method of manufacturing printed board using the same |
| US6736953B1 (en) * | 2001-09-28 | 2004-05-18 | Lsi Logic Corporation | High frequency electrochemical deposition |
| US7426067B1 (en) | 2001-12-17 | 2008-09-16 | Regents Of The University Of Colorado | Atomic layer deposition on micro-mechanical devices |
| US20030168344A1 (en) * | 2002-03-08 | 2003-09-11 | Applied Materials, Inc. | Selective metal deposition for electrochemical plating |
| WO2003088352A1 (en) * | 2002-04-09 | 2003-10-23 | Rensselaer Polytechnic Institute | Electrochemical planarization of metal feature surfaces |
| US20030201170A1 (en) * | 2002-04-24 | 2003-10-30 | Applied Materials, Inc. | Apparatus and method for electropolishing a substrate in an electroplating cell |
| US20030201185A1 (en) * | 2002-04-29 | 2003-10-30 | Applied Materials, Inc. | In-situ pre-clean for electroplating process |
| US6911136B2 (en) * | 2002-04-29 | 2005-06-28 | Applied Materials, Inc. | Method for regulating the electrical power applied to a substrate during an immersion process |
| DE10223957B4 (de) * | 2002-05-31 | 2006-12-21 | Advanced Micro Devices, Inc., Sunnyvale | Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht |
| US7022216B2 (en) * | 2002-06-12 | 2006-04-04 | Faraday Technology Marketing Group, Llc | Electrolytic etching of metal layers |
| US7084509B2 (en) | 2002-10-03 | 2006-08-01 | International Business Machines Corporation | Electronic package with filled blinds vias |
| US7553686B2 (en) * | 2002-12-17 | 2009-06-30 | The Regents Of The University Of Colorado, A Body Corporate | Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices |
| US20040206628A1 (en) * | 2003-04-18 | 2004-10-21 | Applied Materials, Inc. | Electrical bias during wafer exit from electrolyte bath |
| US7268075B2 (en) * | 2003-05-16 | 2007-09-11 | Intel Corporation | Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm) |
| US20050095854A1 (en) * | 2003-10-31 | 2005-05-05 | Uzoh Cyprian E. | Methods for depositing high yield and low defect density conductive films in damascene structures |
| US20050145506A1 (en) * | 2003-12-29 | 2005-07-07 | Taylor E. J. | Electrochemical etching of circuitry for high density interconnect electronic modules |
| US20060207888A1 (en) * | 2003-12-29 | 2006-09-21 | Taylor E J | Electrochemical etching of circuitry for high density interconnect electronic modules |
| US7553401B2 (en) * | 2004-03-19 | 2009-06-30 | Faraday Technology, Inc. | Electroplating cell with hydrodynamics facilitating more uniform deposition across a workpiece during plating |
| US7947161B2 (en) * | 2004-03-19 | 2011-05-24 | Faraday Technology, Inc. | Method of operating an electroplating cell with hydrodynamics facilitating more uniform deposition on a workpiece with through holes |
| US7791290B2 (en) | 2005-09-30 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Ultra-small resonating charged particle beam modulator |
| US7586097B2 (en) | 2006-01-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Switching micro-resonant structures using at least one director |
| US7626179B2 (en) * | 2005-09-30 | 2009-12-01 | Virgin Island Microsystems, Inc. | Electron beam induced resonance |
| KR100907841B1 (ko) * | 2004-09-24 | 2009-07-14 | 이비덴 가부시키가이샤 | 도금 방법 및 도금 장치 |
| US20060183321A1 (en) * | 2004-09-27 | 2006-08-17 | Basol Bulent M | Method for reduction of gap fill defects |
| JP2006131926A (ja) * | 2004-11-02 | 2006-05-25 | Sharp Corp | 微細孔に対するメッキ方法、及びこれを用いた金バンプ形成方法と半導体装置の製造方法、並びに半導体装置 |
| US7550070B2 (en) * | 2006-02-03 | 2009-06-23 | Novellus Systems, Inc. | Electrode and pad assembly for processing conductive layers |
| EP1839695A1 (en) * | 2006-03-31 | 2007-10-03 | Debiotech S.A. | Medical liquid injection device |
| US7876793B2 (en) | 2006-04-26 | 2011-01-25 | Virgin Islands Microsystems, Inc. | Micro free electron laser (FEL) |
| US7732786B2 (en) | 2006-05-05 | 2010-06-08 | Virgin Islands Microsystems, Inc. | Coupling energy in a plasmon wave to an electron beam |
| US8188431B2 (en) | 2006-05-05 | 2012-05-29 | Jonathan Gorrell | Integration of vacuum microelectronic device with integrated circuit |
| US7728397B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Coupled nano-resonating energy emitting structures |
| US7728702B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Shielding of integrated circuit package with high-permeability magnetic material |
| US7986113B2 (en) | 2006-05-05 | 2011-07-26 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
| US8500985B2 (en) | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
| US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
| US7990336B2 (en) | 2007-06-19 | 2011-08-02 | Virgin Islands Microsystems, Inc. | Microwave coupled excitation of solid state resonant arrays |
| US20090065365A1 (en) * | 2007-09-11 | 2009-03-12 | Asm Nutool, Inc. | Method and apparatus for copper electroplating |
| US8298384B2 (en) | 2008-01-31 | 2012-10-30 | Century Plating Co. | Method and apparatus for plating metal parts |
| CN102054759B (zh) * | 2009-11-10 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 铜互连结构的形成方法 |
| EP2549089B1 (en) * | 2010-03-19 | 2014-06-18 | Honda Motor Co., Ltd. | Piston for internal combustion engine |
| US8575028B2 (en) | 2011-04-15 | 2013-11-05 | Novellus Systems, Inc. | Method and apparatus for filling interconnect structures |
| US20150053565A1 (en) * | 2013-08-26 | 2015-02-26 | Lam Research Corporation | Bottom-up fill in damascene features |
| CN103484908B (zh) * | 2013-09-29 | 2016-09-21 | 华进半导体封装先导技术研发中心有限公司 | Tsv电化学沉积铜方法 |
| CN103668370A (zh) * | 2013-12-19 | 2014-03-26 | 潮州市连思科技发展有限公司 | 一种光盘脉冲电镀方法 |
| CN106486415B (zh) * | 2015-09-01 | 2020-03-31 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制造方法 |
| EP3485068B1 (en) | 2016-07-13 | 2026-04-08 | Iontra Inc | Electrochemical methods, devices and compositions |
| US10329683B2 (en) | 2016-11-03 | 2019-06-25 | Lam Research Corporation | Process for optimizing cobalt electrofill using sacrificial oxidants |
| US10684522B2 (en) | 2017-12-07 | 2020-06-16 | Faraday Technology, Inc. | Electrochemical mirror system and method |
| US11411258B2 (en) | 2018-09-05 | 2022-08-09 | Faraday Technology, Inc. | Pulse reverse current high rate electrodeposition and charging while mitigating the adverse effects of dendrite formation |
| US11746433B2 (en) | 2019-11-05 | 2023-09-05 | Macdermid Enthone Inc. | Single step electrolytic method of filling through holes in printed circuit boards and other substrates |
| US11203816B1 (en) * | 2020-10-23 | 2021-12-21 | Applied Materials, Inc. | Electroplating seed layer buildup and repair |
| US12546025B2 (en) | 2021-10-14 | 2026-02-10 | Faraday Technology, Inc. | Nanocarbon coating system and coating method for stray and reflected light suppression |
| KR102772776B1 (ko) * | 2022-12-16 | 2025-02-27 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 및 도금 방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4666567A (en) * | 1981-07-31 | 1987-05-19 | The Boeing Company | Automated alternating polarity pulse electrolytic processing of electrically conductive substances |
| JPH06176926A (ja) * | 1992-12-02 | 1994-06-24 | Matsushita Electric Ind Co Ltd | 組成変調軟磁性膜およびその製造方法 |
| US5972192A (en) * | 1997-07-23 | 1999-10-26 | Advanced Micro Devices, Inc. | Pulse electroplating copper or copper alloys |
-
1999
- 1999-10-14 CA CA002314109A patent/CA2314109A1/en not_active Abandoned
- 1999-10-14 KR KR1020007006451A patent/KR20010033089A/ko not_active Withdrawn
- 1999-10-14 WO PCT/US1999/023653 patent/WO2000022193A2/en not_active Ceased
- 1999-10-14 JP JP2000576078A patent/JP2002527621A/ja active Pending
- 1999-10-14 MX MXPA00005871A patent/MXPA00005871A/es active IP Right Grant
- 1999-10-14 EP EP99970432A patent/EP1070159A4/en not_active Withdrawn
- 1999-10-14 BR BR9906873-7A patent/BR9906873A/pt unknown
- 1999-10-14 AU AU14443/00A patent/AU765242B2/en not_active Ceased
- 1999-10-14 CN CNB998024821A patent/CN1180133C/zh not_active Expired - Fee Related
-
2000
- 2000-04-20 US US09/553,616 patent/US6303014B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6303014B1 (en) | 2001-10-16 |
| AU1444300A (en) | 2000-05-01 |
| AU765242B2 (en) | 2003-09-11 |
| CN1342220A (zh) | 2002-03-27 |
| EP1070159A4 (en) | 2004-06-09 |
| KR20010033089A (ko) | 2001-04-25 |
| CN1180133C (zh) | 2004-12-15 |
| CA2314109A1 (en) | 2000-04-20 |
| WO2000022193A2 (en) | 2000-04-20 |
| MXPA00005871A (es) | 2002-08-06 |
| EP1070159A1 (en) | 2001-01-24 |
| WO2000022193A3 (en) | 2001-04-12 |
| JP2002527621A (ja) | 2002-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 6A E 7A ANUIDADES. |