BRPI0407866A - abastecimento de energia em chip - Google Patents

abastecimento de energia em chip

Info

Publication number
BRPI0407866A
BRPI0407866A BRPI0407866-7A BRPI0407866A BRPI0407866A BR PI0407866 A BRPI0407866 A BR PI0407866A BR PI0407866 A BRPI0407866 A BR PI0407866A BR PI0407866 A BRPI0407866 A BR PI0407866A
Authority
BR
Brazil
Prior art keywords
integrated circuit
diode
integrated
capacitor
chip
Prior art date
Application number
BRPI0407866-7A
Other languages
English (en)
Inventor
Richard A Metzler
Original Assignee
Integrated Discrete Devices Ll
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Discrete Devices Ll filed Critical Integrated Discrete Devices Ll
Publication of BRPI0407866A publication Critical patent/BRPI0407866A/pt

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30Modifications for providing a predetermined threshold before switching
    • H03K2017/307Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

"ABASTECIMENTO DE ENERGIA EM CHIP". A presente invenção refere-se a uma técnica para extrair energia do circuito de sinal externo para energizar elementos em chip para um diodo de circuito integrado (ICD) que utiliza um diodo e um capacitor integrados. O capacitor é carregado pela tensão aplicada externa durante o tempo em que o diodo de circuito integrado bloqueia o fluxo de corrente externa. O capacitor carregado atua então como uma bateria para energizar os circuitos em chip para prover o controle ativo para a função do diodo de circuito integrado. Este diodo de circuito integrado poderia ser provido como um diodo distinto de dois terminais, ou integrado em um diodo de circuito integrado maior. Esta mesma técnica pode ser utilizada para um MOSFET de circuito integrado (ICM) 'auto-energizado' com a utilização de um sinal lógico de baixa energia para disparar um circuito interno que proveria um acionamento de porta muito maior que o sinal lógico poderia prover. Este poderia também ser provido como componentes distintos de três terminais ou integrado em um circuito integrado maior.
BRPI0407866-7A 2003-02-26 2004-02-24 abastecimento de energia em chip BRPI0407866A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45106003P 2003-02-26 2003-02-26
US10/758,083 US7030680B2 (en) 2003-02-26 2004-01-16 On chip power supply
PCT/US2004/005465 WO2004077190A1 (en) 2003-02-26 2004-02-24 On chip power supply

Publications (1)

Publication Number Publication Date
BRPI0407866A true BRPI0407866A (pt) 2006-03-01

Family

ID=32872258

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0407866-7A BRPI0407866A (pt) 2003-02-26 2004-02-24 abastecimento de energia em chip

Country Status (9)

Country Link
US (2) US7030680B2 (pt)
EP (1) EP1602016A1 (pt)
JP (1) JP2007521543A (pt)
KR (1) KR20050107460A (pt)
AU (1) AU2004216021B2 (pt)
BR (1) BRPI0407866A (pt)
CA (1) CA2517152A1 (pt)
TW (1) TW200501531A (pt)
WO (1) WO2004077190A1 (pt)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014547A (ja) * 2002-06-03 2004-01-15 Toshiba Corp 半導体装置及び容量調節回路
KR20060018553A (ko) * 2004-08-25 2006-03-02 삼성전자주식회사 기준 전압의 흔들림을 줄이기 위한 기준 전압 흔들림 보상회로 및 이를 가지는 비교기
JP4059874B2 (ja) 2004-09-30 2008-03-12 富士通株式会社 整流回路
CN101523614B (zh) * 2006-11-20 2011-04-20 松下电器产业株式会社 半导体装置及其驱动方法
US7595680B2 (en) * 2007-01-25 2009-09-29 Panasonic Corporation Bidirectional switch and method for driving the same
US20090058504A1 (en) * 2007-09-04 2009-03-05 International Business Machines Corporation Self-powered voltage islands on an integrated circuit
US20090230771A1 (en) * 2008-03-11 2009-09-17 Sukumar De Simple and passive solution for providing power interruption capability with controlled inrush current in critical power supply
KR200454128Y1 (ko) * 2008-10-06 2011-06-16 서민군 삽지식 레이저포인터
US7830168B2 (en) * 2009-02-09 2010-11-09 Rantec Power Systems, Inc. Temperature variance nullification in an inrush current suppression circuit
JP2012527178A (ja) 2009-05-11 2012-11-01 エスエス エスシー アイピー、エルエルシー エンハンスメントモード型およびデプレションモード型のワイドバンドギャップ半導体jfetのためのゲートドライバ
KR101065309B1 (ko) 2010-03-29 2011-09-16 삼성에스디아이 주식회사 배터리 팩, 및 배터리 팩의 제어 방법
CN102723861B (zh) * 2012-06-19 2015-05-27 华为技术有限公司 一种芯片供电电路
CN103336549B (zh) * 2013-06-24 2015-01-07 无锡芯朋微电子股份有限公司 一种集成温度补偿负反馈的芯片结构
DE102015011718A1 (de) * 2014-09-10 2016-03-10 Infineon Technologies Ag Gleichrichtervorrichtung und Anordnung von Gleichrichtern
US11539201B2 (en) 2019-03-04 2022-12-27 Portwell Inc. Reverse polarity protection device
CN113906834B (zh) * 2019-05-01 2024-09-13 Io技术集团公司 用以使用3d印刷电连接芯片与顶部连接器的方法
GB2590057B (en) 2019-10-10 2022-11-16 Steifpower Tech Company Limited A Field-Effect Transistor (FET) based synchronous rectifier for emulating a diode
KR102758811B1 (ko) * 2019-12-26 2025-01-23 엘지디스플레이 주식회사 게이트 구동 회로 및 이를 이용한 표시 장치
US11497124B2 (en) 2020-06-09 2022-11-08 Io Tech Group Ltd. Methods for printing conformal materials on component edges at high resolution
US11691332B2 (en) 2020-08-05 2023-07-04 Io Tech Group Ltd. Systems and methods for 3D printing with vacuum assisted laser printing machine

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759475A (en) * 1980-09-26 1982-04-09 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor rectifying circuit with 2-terminal
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
FR2612022B1 (fr) * 1987-03-03 1994-03-25 Neiman Circuit de commutation par un transistor mos canal n
US5109186A (en) * 1990-07-20 1992-04-28 Delta Electronic Industrial Co., Ltd. PWM step-down MOSFET regulator
US5347231A (en) * 1993-02-23 1994-09-13 Associated Universities, Inc. Low noise charge sensitive preamplifier DC stabilized without a physical resistor
JP2795217B2 (ja) * 1995-06-01 1998-09-10 日本電気株式会社 同期整流方式コンバータ
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
JP3444468B2 (ja) * 1997-01-29 2003-09-08 株式会社村田製作所 Dc−dcコンバータ
US6023194A (en) 1997-05-23 2000-02-08 Tibbetts Industries, Inc. Amplifier with reduced input capacitance
US6060943A (en) * 1998-04-14 2000-05-09 Nmb (Usa) Inc. Circuit simulating a diode
US6208191B1 (en) * 1998-10-29 2001-03-27 Microchip Technology Incorporated Positive and negative voltage clamp for a wireless communication input circuit
US6038148A (en) * 1998-12-11 2000-03-14 Ericsson, Inc. Self-driven synchronous rectification scheme
US6256214B1 (en) * 1999-03-11 2001-07-03 Ericsson Inc. General self-driven synchronous rectification scheme for synchronous rectifiers having a floating gate
US6420757B1 (en) * 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6566936B1 (en) * 1999-10-29 2003-05-20 Lovoltech Inc. Two terminal rectifier normally OFF JFET
US6297970B2 (en) * 1999-12-10 2001-10-02 International Business Machines Corporation Multiple output synchronous rectifier circuit providing zero volt switch mode operation
US6421262B1 (en) * 2000-02-08 2002-07-16 Vlt Corporation Active rectifier
US6433370B1 (en) * 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6580150B1 (en) * 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
JP4434474B2 (ja) * 2000-11-29 2010-03-17 Necエレクトロニクス株式会社 Mosトランジスタの模擬試験方法
EP1388208B1 (en) * 2001-03-28 2007-01-10 Koninklijke Philips Electronics N.V. Synchronous rectifiers
US6537921B2 (en) * 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes

Also Published As

Publication number Publication date
US20060145746A1 (en) 2006-07-06
EP1602016A1 (en) 2005-12-07
KR20050107460A (ko) 2005-11-11
AU2004216021B2 (en) 2009-01-22
WO2004077190A1 (en) 2004-09-10
US7030680B2 (en) 2006-04-18
US20040164785A1 (en) 2004-08-26
AU2004216021A1 (en) 2004-09-10
JP2007521543A (ja) 2007-08-02
TW200501531A (en) 2005-01-01
CA2517152A1 (en) 2004-09-10

Similar Documents

Publication Publication Date Title
BRPI0407866A (pt) abastecimento de energia em chip
US9520879B2 (en) Adaptive blanking timer for short circuit detection
KR101035232B1 (ko) 충전제어용 반도체 집적회로
ATE471592T1 (de) Integrierte schaltung zur bereitstellung einer stromgeregelten ladungspumpe mit zum kondensator proportionalem strom
ES2105089T3 (es) Circuito suministrador de energia.
CN103094980B (zh) 备援式电源控制系统
US7554367B2 (en) Driving circuit
ES2608797T3 (es) Circuito de conmutación suave
TW201517437A (zh) 電源控制晶片供電電路
US20130313914A1 (en) Control circuit for universal serial bus connector
FI20045171A0 (fi) Puolijohdekomponentin ohjauskytkentä
CN106300628A (zh) 一种实现切换的方法和装置
DE60306621D1 (de) Integrierte Schaltung mit niedriger Versorgungsspannung
CN105576777B (zh) 一种电池保护系统
US20160029448A1 (en) Led driver and led driving method
TW202129452A (zh) 開關穩壓器
CN205196015U (zh) 驱动电源保护装置、灯具
TWI659599B (zh) 功率開關裝置及其操作方法
DE60218225D1 (de) Integrierte schaltung und batteriebetriebenes elektronisches gerät
JP5009083B2 (ja) スイッチング電源回路
TW200634833A (en) Internal voltage generating circuit
ATE539475T1 (de) Spiegelsteuersystem
TWI891201B (zh) 高效率之電源供應器
TW201625975A (zh) 電子設備供電報警系統
TW201515358A (zh) 具有供電模式切換功能的usb裝置

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2159 DE 22/05/2012.