BRPI0407866A - abastecimento de energia em chip - Google Patents
abastecimento de energia em chipInfo
- Publication number
- BRPI0407866A BRPI0407866A BRPI0407866-7A BRPI0407866A BRPI0407866A BR PI0407866 A BRPI0407866 A BR PI0407866A BR PI0407866 A BRPI0407866 A BR PI0407866A BR PI0407866 A BRPI0407866 A BR PI0407866A
- Authority
- BR
- Brazil
- Prior art keywords
- integrated circuit
- diode
- integrated
- capacitor
- chip
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
"ABASTECIMENTO DE ENERGIA EM CHIP". A presente invenção refere-se a uma técnica para extrair energia do circuito de sinal externo para energizar elementos em chip para um diodo de circuito integrado (ICD) que utiliza um diodo e um capacitor integrados. O capacitor é carregado pela tensão aplicada externa durante o tempo em que o diodo de circuito integrado bloqueia o fluxo de corrente externa. O capacitor carregado atua então como uma bateria para energizar os circuitos em chip para prover o controle ativo para a função do diodo de circuito integrado. Este diodo de circuito integrado poderia ser provido como um diodo distinto de dois terminais, ou integrado em um diodo de circuito integrado maior. Esta mesma técnica pode ser utilizada para um MOSFET de circuito integrado (ICM) 'auto-energizado' com a utilização de um sinal lógico de baixa energia para disparar um circuito interno que proveria um acionamento de porta muito maior que o sinal lógico poderia prover. Este poderia também ser provido como componentes distintos de três terminais ou integrado em um circuito integrado maior.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45106003P | 2003-02-26 | 2003-02-26 | |
| US10/758,083 US7030680B2 (en) | 2003-02-26 | 2004-01-16 | On chip power supply |
| PCT/US2004/005465 WO2004077190A1 (en) | 2003-02-26 | 2004-02-24 | On chip power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0407866A true BRPI0407866A (pt) | 2006-03-01 |
Family
ID=32872258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0407866-7A BRPI0407866A (pt) | 2003-02-26 | 2004-02-24 | abastecimento de energia em chip |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7030680B2 (pt) |
| EP (1) | EP1602016A1 (pt) |
| JP (1) | JP2007521543A (pt) |
| KR (1) | KR20050107460A (pt) |
| AU (1) | AU2004216021B2 (pt) |
| BR (1) | BRPI0407866A (pt) |
| CA (1) | CA2517152A1 (pt) |
| TW (1) | TW200501531A (pt) |
| WO (1) | WO2004077190A1 (pt) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004014547A (ja) * | 2002-06-03 | 2004-01-15 | Toshiba Corp | 半導体装置及び容量調節回路 |
| KR20060018553A (ko) * | 2004-08-25 | 2006-03-02 | 삼성전자주식회사 | 기준 전압의 흔들림을 줄이기 위한 기준 전압 흔들림 보상회로 및 이를 가지는 비교기 |
| JP4059874B2 (ja) | 2004-09-30 | 2008-03-12 | 富士通株式会社 | 整流回路 |
| CN101523614B (zh) * | 2006-11-20 | 2011-04-20 | 松下电器产业株式会社 | 半导体装置及其驱动方法 |
| US7595680B2 (en) * | 2007-01-25 | 2009-09-29 | Panasonic Corporation | Bidirectional switch and method for driving the same |
| US20090058504A1 (en) * | 2007-09-04 | 2009-03-05 | International Business Machines Corporation | Self-powered voltage islands on an integrated circuit |
| US20090230771A1 (en) * | 2008-03-11 | 2009-09-17 | Sukumar De | Simple and passive solution for providing power interruption capability with controlled inrush current in critical power supply |
| KR200454128Y1 (ko) * | 2008-10-06 | 2011-06-16 | 서민군 | 삽지식 레이저포인터 |
| US7830168B2 (en) * | 2009-02-09 | 2010-11-09 | Rantec Power Systems, Inc. | Temperature variance nullification in an inrush current suppression circuit |
| JP2012527178A (ja) | 2009-05-11 | 2012-11-01 | エスエス エスシー アイピー、エルエルシー | エンハンスメントモード型およびデプレションモード型のワイドバンドギャップ半導体jfetのためのゲートドライバ |
| KR101065309B1 (ko) | 2010-03-29 | 2011-09-16 | 삼성에스디아이 주식회사 | 배터리 팩, 및 배터리 팩의 제어 방법 |
| CN102723861B (zh) * | 2012-06-19 | 2015-05-27 | 华为技术有限公司 | 一种芯片供电电路 |
| CN103336549B (zh) * | 2013-06-24 | 2015-01-07 | 无锡芯朋微电子股份有限公司 | 一种集成温度补偿负反馈的芯片结构 |
| DE102015011718A1 (de) * | 2014-09-10 | 2016-03-10 | Infineon Technologies Ag | Gleichrichtervorrichtung und Anordnung von Gleichrichtern |
| US11539201B2 (en) | 2019-03-04 | 2022-12-27 | Portwell Inc. | Reverse polarity protection device |
| CN113906834B (zh) * | 2019-05-01 | 2024-09-13 | Io技术集团公司 | 用以使用3d印刷电连接芯片与顶部连接器的方法 |
| GB2590057B (en) | 2019-10-10 | 2022-11-16 | Steifpower Tech Company Limited | A Field-Effect Transistor (FET) based synchronous rectifier for emulating a diode |
| KR102758811B1 (ko) * | 2019-12-26 | 2025-01-23 | 엘지디스플레이 주식회사 | 게이트 구동 회로 및 이를 이용한 표시 장치 |
| US11497124B2 (en) | 2020-06-09 | 2022-11-08 | Io Tech Group Ltd. | Methods for printing conformal materials on component edges at high resolution |
| US11691332B2 (en) | 2020-08-05 | 2023-07-04 | Io Tech Group Ltd. | Systems and methods for 3D printing with vacuum assisted laser printing machine |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5759475A (en) * | 1980-09-26 | 1982-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor rectifying circuit with 2-terminal |
| US4535251A (en) * | 1982-12-21 | 1985-08-13 | International Rectifier Corporation | A.C. Solid state relay circuit and structure |
| FR2612022B1 (fr) * | 1987-03-03 | 1994-03-25 | Neiman | Circuit de commutation par un transistor mos canal n |
| US5109186A (en) * | 1990-07-20 | 1992-04-28 | Delta Electronic Industrial Co., Ltd. | PWM step-down MOSFET regulator |
| US5347231A (en) * | 1993-02-23 | 1994-09-13 | Associated Universities, Inc. | Low noise charge sensitive preamplifier DC stabilized without a physical resistor |
| JP2795217B2 (ja) * | 1995-06-01 | 1998-09-10 | 日本電気株式会社 | 同期整流方式コンバータ |
| US5726594A (en) * | 1995-10-02 | 1998-03-10 | Siliconix Incorporated | Switching device including power MOSFET with internal power supply circuit |
| US5825079A (en) * | 1997-01-23 | 1998-10-20 | Luminous Intent, Inc. | Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage |
| JP3444468B2 (ja) * | 1997-01-29 | 2003-09-08 | 株式会社村田製作所 | Dc−dcコンバータ |
| US6023194A (en) | 1997-05-23 | 2000-02-08 | Tibbetts Industries, Inc. | Amplifier with reduced input capacitance |
| US6060943A (en) * | 1998-04-14 | 2000-05-09 | Nmb (Usa) Inc. | Circuit simulating a diode |
| US6208191B1 (en) * | 1998-10-29 | 2001-03-27 | Microchip Technology Incorporated | Positive and negative voltage clamp for a wireless communication input circuit |
| US6038148A (en) * | 1998-12-11 | 2000-03-14 | Ericsson, Inc. | Self-driven synchronous rectification scheme |
| US6256214B1 (en) * | 1999-03-11 | 2001-07-03 | Ericsson Inc. | General self-driven synchronous rectification scheme for synchronous rectifiers having a floating gate |
| US6420757B1 (en) * | 1999-09-14 | 2002-07-16 | Vram Technologies, Llc | Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability |
| US6566936B1 (en) * | 1999-10-29 | 2003-05-20 | Lovoltech Inc. | Two terminal rectifier normally OFF JFET |
| US6297970B2 (en) * | 1999-12-10 | 2001-10-02 | International Business Machines Corporation | Multiple output synchronous rectifier circuit providing zero volt switch mode operation |
| US6421262B1 (en) * | 2000-02-08 | 2002-07-16 | Vlt Corporation | Active rectifier |
| US6433370B1 (en) * | 2000-02-10 | 2002-08-13 | Vram Technologies, Llc | Method and apparatus for cylindrical semiconductor diodes |
| US6580150B1 (en) * | 2000-11-13 | 2003-06-17 | Vram Technologies, Llc | Vertical junction field effect semiconductor diodes |
| JP4434474B2 (ja) * | 2000-11-29 | 2010-03-17 | Necエレクトロニクス株式会社 | Mosトランジスタの模擬試験方法 |
| EP1388208B1 (en) * | 2001-03-28 | 2007-01-10 | Koninklijke Philips Electronics N.V. | Synchronous rectifiers |
| US6537921B2 (en) * | 2001-05-23 | 2003-03-25 | Vram Technologies, Llc | Vertical metal oxide silicon field effect semiconductor diodes |
-
2004
- 2004-01-16 US US10/758,083 patent/US7030680B2/en not_active Expired - Fee Related
- 2004-02-24 BR BRPI0407866-7A patent/BRPI0407866A/pt not_active IP Right Cessation
- 2004-02-24 EP EP04714177A patent/EP1602016A1/en not_active Withdrawn
- 2004-02-24 KR KR1020057015868A patent/KR20050107460A/ko not_active Abandoned
- 2004-02-24 JP JP2006503840A patent/JP2007521543A/ja active Pending
- 2004-02-24 CA CA002517152A patent/CA2517152A1/en not_active Abandoned
- 2004-02-24 WO PCT/US2004/005465 patent/WO2004077190A1/en not_active Ceased
- 2004-02-24 AU AU2004216021A patent/AU2004216021B2/en not_active Ceased
- 2004-02-26 TW TW093104936A patent/TW200501531A/zh unknown
-
2006
- 2006-03-08 US US11/371,037 patent/US20060145746A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20060145746A1 (en) | 2006-07-06 |
| EP1602016A1 (en) | 2005-12-07 |
| KR20050107460A (ko) | 2005-11-11 |
| AU2004216021B2 (en) | 2009-01-22 |
| WO2004077190A1 (en) | 2004-09-10 |
| US7030680B2 (en) | 2006-04-18 |
| US20040164785A1 (en) | 2004-08-26 |
| AU2004216021A1 (en) | 2004-09-10 |
| JP2007521543A (ja) | 2007-08-02 |
| TW200501531A (en) | 2005-01-01 |
| CA2517152A1 (en) | 2004-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 8A ANUIDADE. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2159 DE 22/05/2012. |