BRPI0410126A - amplificador de tensão de ganho constante e banda larga - Google Patents

amplificador de tensão de ganho constante e banda larga

Info

Publication number
BRPI0410126A
BRPI0410126A BRPI0410126-0A BRPI0410126A BRPI0410126A BR PI0410126 A BRPI0410126 A BR PI0410126A BR PI0410126 A BRPI0410126 A BR PI0410126A BR PI0410126 A BRPI0410126 A BR PI0410126A
Authority
BR
Brazil
Prior art keywords
constant gain
voltage amplifier
broadband voltage
temperature
function
Prior art date
Application number
BRPI0410126-0A
Other languages
English (en)
Inventor
Yue Wu
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BRPI0410126A publication Critical patent/BRPI0410126A/pt

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45484Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit
    • H03F3/45596Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by offset reduction
    • H03F3/45609Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by offset reduction by using a feedforward circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45654Indexing scheme relating to differential amplifiers the LC comprising one or more extra diodes not belonging to mirrors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

"AMPLIFICADOR DE TENSãO DE GANHO CONSTANTE E BANDA LARGA". Um amplificador de tensão de ganho constante e banda larga. Um transistor de entrada possui uma transcondutância que é uma função de temperatura e processo de fabricação. Um amplificador de transimpedância é conectado ao transistor de entrada. O amplificador de transimpedância possui uma transimpedância que é uma função de temperatura e processo que é substancialmente o inverso da função de temperatura e processo de fabricação da transcondutância do transistor de entrada.
BRPI0410126-0A 2003-05-09 2004-05-10 amplificador de tensão de ganho constante e banda larga BRPI0410126A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/434,675 US6914484B2 (en) 2003-05-09 2003-05-09 Wideband constant-gain voltage amplifier
PCT/US2004/014595 WO2004102789A2 (en) 2003-05-09 2004-05-10 Wideband constant-gain voltage amplifier

Publications (1)

Publication Number Publication Date
BRPI0410126A true BRPI0410126A (pt) 2006-05-09

Family

ID=33416753

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0410126-0A BRPI0410126A (pt) 2003-05-09 2004-05-10 amplificador de tensão de ganho constante e banda larga

Country Status (5)

Country Link
US (1) US6914484B2 (pt)
KR (1) KR20060013390A (pt)
BR (1) BRPI0410126A (pt)
IL (1) IL171598A (pt)
WO (1) WO2004102789A2 (pt)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9184957B2 (en) * 2012-12-27 2015-11-10 Intel Corporation High speed receivers circuits and methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602894A (nl) 1986-11-14 1988-06-01 Philips Nv Filterschakeling.
IT1245688B (it) 1991-04-24 1994-10-13 Sgs Thomson Microelectronics Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari
IT1252333B (it) 1991-11-26 1995-06-08 Sgs Thomson Microelectronics Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore
EP0893880B8 (de) * 1997-07-22 2004-03-03 Infineon Technologies AG Verstärkerstufe mit konstanter Eingangsimpedanz
FR2770351A1 (fr) * 1997-10-28 1999-04-30 Philips Electronics Nv Amplificateur a fort gain ayant une dynamique de sortie limitee
US5990740A (en) * 1997-12-02 1999-11-23 Nokia Mobile Phones Differential amplifier with adjustable linearity
US5973563A (en) * 1997-12-10 1999-10-26 National Semiconductor Corporation High power output stage with temperature stable precisely controlled quiescent current and inherent short circuit protection

Also Published As

Publication number Publication date
IL171598A (en) 2009-12-24
KR20060013390A (ko) 2006-02-09
US20040222852A1 (en) 2004-11-11
WO2004102789A2 (en) 2004-11-25
US6914484B2 (en) 2005-07-05
WO2004102789A3 (en) 2005-02-03

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2159 DE 22/05/2012.