BRPI0411591A - método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino - Google Patents

método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino

Info

Publication number
BRPI0411591A
BRPI0411591A BRPI0411591-0A BRPI0411591A BRPI0411591A BR PI0411591 A BRPI0411591 A BR PI0411591A BR PI0411591 A BRPI0411591 A BR PI0411591A BR PI0411591 A BRPI0411591 A BR PI0411591A
Authority
BR
Brazil
Prior art keywords
film electronic
conductive layer
thin film
electronic components
manufacturing
Prior art date
Application number
BRPI0411591-0A
Other languages
English (en)
Inventor
Antti Kemppainen
Terho Kololuoma
Markus Tuomikoski
Raimo Korhonen
Pasi Laakkonen
Pekka Koivukunnas
Original Assignee
Avantone Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avantone Oy filed Critical Avantone Oy
Publication of BRPI0411591A publication Critical patent/BRPI0411591A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

"MéTODO E APARELHO PARA FABRICAR COMPONENTES ELETRÈNICOS DE FILME FINO, E, COMPONENTE ELETRÈNICO DE FILME FINO". A invenção relaciona-se a um método para fabricar um componente eletrónico de filme fino e um aparelho implementando o método. A invenção relaciona-se também a um componente eletrónico de filme fino fabricado de acordo com o método. Uma camada condutora galvanicamente uniforme, mais inferior, de material eletricamente condutor é primeiramente formada em um substrato substancialmente dielétrico, a partir do qual as áreas condutoras da camada condutora mais inferior são galvanicamente separadas umas das outras para formar uma configuração de eletrodo. No topo da citada configuração de eletrodo é então possível formar uma ou várias camadas superiores passivas ou ativas requeridas no componente de filme fino. De acordo com a invenção, a separação da citada camada condutora mais inferior em uma configuração de eletrodo tem lugar exercendo, na camada condutora mais inferior, uma operação de usinagem baseada em gravação em relevo por corte por matriz, isto é, gravação em relevo, onde o relevo do elemento de usinagem usado na operação de usinagem causa uma deformação permanente no substrato e ao mesmo tempo grava em relevo áreas da camada condutora em áreas condutoras galvanicamente separadas umas das outras. A invenção e adequada para fabricar componentes de filme fino em um processo de cilindro a cilindro.
BRPI0411591-0A 2003-06-19 2004-06-18 método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino BRPI0411591A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20030919A FI20030919A7 (fi) 2003-06-19 2003-06-19 Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti
PCT/FI2004/050098 WO2004111729A1 (en) 2003-06-19 2004-06-18 A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component

Publications (1)

Publication Number Publication Date
BRPI0411591A true BRPI0411591A (pt) 2006-08-29

Family

ID=8566276

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0411591-0A BRPI0411591A (pt) 2003-06-19 2004-06-18 método e aparelho para fabricar componentes eletrÈnicos de filme fino, e, componente eletrÈnico de filme fino

Country Status (9)

Country Link
US (1) US20080012151A1 (pt)
EP (1) EP1636652A1 (pt)
JP (1) JP2007527106A (pt)
CN (1) CN1836190A (pt)
BR (1) BRPI0411591A (pt)
CA (1) CA2529329A1 (pt)
FI (1) FI20030919A7 (pt)
RU (1) RU2006101405A (pt)
WO (1) WO2004111729A1 (pt)

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US8329504B2 (en) 2008-02-12 2012-12-11 Konica Minolta Holdings, Inc. Method of forming organic semiconductor layer and method of manufacturing organic thin film transistor
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CN108984885B (zh) * 2018-07-05 2023-05-16 中国船舶工业集团公司第七0八研究所 一种基于许可永久变形下的装载甲板板设计方法
CN111525032A (zh) * 2020-04-06 2020-08-11 杭州纤纳光电科技有限公司 一种二维网状背接触式钙钛矿太阳能电池及其制备方法
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Also Published As

Publication number Publication date
US20080012151A1 (en) 2008-01-17
FI20030919L (fi) 2004-12-20
FI20030919A0 (fi) 2003-06-19
CA2529329A1 (en) 2004-12-23
WO2004111729A1 (en) 2004-12-23
RU2006101405A (ru) 2006-06-27
FI20030919A7 (fi) 2004-12-20
JP2007527106A (ja) 2007-09-20
EP1636652A1 (en) 2006-03-22
CN1836190A (zh) 2006-09-20

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 4A, 5A, 6A, 7A E 8A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2159 DE 22/05/2012.