BRPI0507599A - amplificador de transistor de efeito de campo em linearização - Google Patents

amplificador de transistor de efeito de campo em linearização

Info

Publication number
BRPI0507599A
BRPI0507599A BRPI0507599-8A BRPI0507599A BRPI0507599A BR PI0507599 A BRPI0507599 A BR PI0507599A BR PI0507599 A BRPI0507599 A BR PI0507599A BR PI0507599 A BRPI0507599 A BR PI0507599A
Authority
BR
Brazil
Prior art keywords
linearization
field effect
effect transistor
transistor amplifier
amplifier
Prior art date
Application number
BRPI0507599-8A
Other languages
English (en)
Inventor
Vladimir Aparin
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BRPI0507599A publication Critical patent/BRPI0507599A/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/162—FETs are biased in the weak inversion region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/24—Indexing scheme relating to amplifiers the supply or bias voltage or current at the source side of a FET being continuously controlled by a controlling signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
BRPI0507599-8A 2004-02-11 2005-01-31 amplificador de transistor de efeito de campo em linearização BRPI0507599A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US54428204P 2004-02-11 2004-02-11
US10/920,526 US7853235B2 (en) 2004-02-11 2004-08-17 Field effect transistor amplifier with linearization
PCT/US2005/003155 WO2005078920A1 (en) 2004-02-11 2005-01-31 Field effect transistor amplifier with linearization

Publications (1)

Publication Number Publication Date
BRPI0507599A true BRPI0507599A (pt) 2007-07-03

Family

ID=34830599

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0507599-8A BRPI0507599A (pt) 2004-02-11 2005-01-31 amplificador de transistor de efeito de campo em linearização

Country Status (5)

Country Link
US (1) US7853235B2 (pt)
KR (1) KR100843997B1 (pt)
BR (1) BRPI0507599A (pt)
IL (1) IL177393A (pt)
WO (1) WO2005078920A1 (pt)

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US7087977B2 (en) * 2002-09-27 2006-08-08 Renesas Technology Corp. Semiconductor device including multiple wiring layers and circuits operating in different frequency bands
US7902925B2 (en) * 2005-08-02 2011-03-08 Qualcomm, Incorporated Amplifier with active post-distortion linearization
US7889007B2 (en) * 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
KR100614928B1 (ko) * 2005-08-17 2006-08-25 삼성전기주식회사 선형화를 위한 미분 중첩회로
CN101273540A (zh) * 2005-09-26 2008-09-24 格罗纳乌有限公司 多级谐振放大器系统和方法
TWI335128B (en) * 2006-03-01 2010-12-21 Princeton Technology Corp Single-end input to differential-ends output low noise amplifier
EP1962418B1 (en) * 2007-02-23 2011-06-29 NTT DoCoMo, Inc. Cryogenic receiving amplifier and amplifying method
EP1978635B1 (en) * 2007-04-04 2013-01-23 TELEFONAKTIEBOLAGET LM ERICSSON (publ) Circuitry and method for reducing second and third-order nonlinearities
US7486135B2 (en) * 2007-05-29 2009-02-03 Telefonaktiebolaget Lm Ericsson (Publ) Configurable, variable gain LNA for multi-band RF receiver
US8035447B2 (en) * 2007-08-21 2011-10-11 Qualcomm, Incorporated Active circuits with load linearization
US7944298B2 (en) 2007-12-18 2011-05-17 Qualcomm, Incorporated Low noise and low input capacitance differential MDS LNA
US7696828B2 (en) * 2008-01-04 2010-04-13 Qualcomm, Incorporated Multi-linearity mode LNA having a deboost current path
US7936214B2 (en) * 2008-03-28 2011-05-03 Medtronic, Inc. Third order derivative distortion cancellation for ultra low power applications
US8175566B2 (en) * 2009-06-04 2012-05-08 Qualcomm, Incorporated Multiple multi-mode low-noise amplifier receiver with shared degenerative inductors
US8102213B2 (en) * 2009-07-23 2012-01-24 Qualcomm, Incorporated Multi-mode low noise amplifier with transformer source degeneration
US8963613B2 (en) * 2011-08-11 2015-02-24 Qualcomm Incorporated Canceling third order non-linearity in current mirror-based circuits
KR101214761B1 (ko) * 2011-09-19 2013-01-09 삼성전기주식회사 다중대역 증폭기 및 다중대역 증폭방법
US8803612B1 (en) 2012-07-26 2014-08-12 Scientific Components Corporation Low-noise amplifier with high linearity
US9077296B2 (en) * 2013-08-05 2015-07-07 Triquint Semiconductor, Inc. Split biased radio frequency power amplifier with enhanced linearity
EP2869465B1 (en) * 2013-11-01 2016-05-25 Nxp B.V. RF amplifier
JP5979160B2 (ja) 2014-01-06 2016-08-24 株式会社村田製作所 増幅器
TWI814672B (zh) * 2016-09-26 2023-09-01 美商天工方案公司 用於射頻應用之主輔場效電晶體組態
CN106385236B (zh) * 2016-10-17 2023-07-28 广西师范大学 一种高线性度高增益的有源混频器及方法
KR20180070328A (ko) 2016-12-16 2018-06-26 삼성전자주식회사 반송파 집성을 위한 저잡음 증폭기 및 이를 포함하는 장치
EP3346608B1 (en) 2017-01-09 2021-05-26 Nxp B.V. Rf amplifier
US10978583B2 (en) 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10141894B1 (en) 2017-07-03 2018-11-27 Qualcomm Incorporated Radio frequency (RF) amplifier
US10276704B1 (en) 2017-10-17 2019-04-30 Mitsubishi Electric Research Laboratiories, Inc. High electron mobility transistor with negative capacitor gate
US10418474B2 (en) 2017-10-17 2019-09-17 Mitsubishi Electric Research Laboratories, Inc. High electron mobility transistor with varying semiconductor layer
US10951176B2 (en) * 2018-05-02 2021-03-16 Maxlinear, Inc. Highly linear low noise transconductor
US10541654B1 (en) * 2018-07-09 2020-01-21 Qualcomm Incorporated Amplification with post-distortion compensation
KR102538339B1 (ko) 2019-01-07 2023-05-31 삼성전자 주식회사 후왜곡을 이용한 선형화 증폭기
CN110149096A (zh) * 2019-06-18 2019-08-20 杭州中科微电子有限公司 一种高线性度的低噪声放大器
US12375045B2 (en) * 2019-07-31 2025-07-29 Qorvo Us, Inc. Reconfigurable amplifier
CN112713879B (zh) * 2020-12-18 2022-06-03 苏州浪潮智能科技有限公司 一种信号纠正电路及服务器
CN116897510A (zh) * 2020-12-31 2023-10-17 天工方案公司 不使用开关的增益级退化电感器切换
KR102721248B1 (ko) * 2021-05-21 2024-10-24 주식회사 인스파워 광대역 피드-포워드 증폭기 및 이를 제어하는 제어 장치
KR102780680B1 (ko) * 2022-08-12 2025-03-11 연세대학교 산학협력단 고선형성 증폭기
US20250007468A1 (en) * 2023-06-28 2025-01-02 Northrop Grumman Systems Corporation Low noise amplifier with post distortion circuit

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US4621239A (en) * 1985-03-29 1986-11-04 Texas Instruments Incorporated Gallium arsenide travelling-wave transistor oscillators for millimeter wave applications
US5051705A (en) * 1990-07-10 1991-09-24 Pacific Monolithics Gain-tilt amplifier
IT1313384B1 (it) 1999-04-28 2002-07-23 St Microelectronics Srl Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut
JP3637830B2 (ja) * 2000-02-22 2005-04-13 株式会社村田製作所 Ｓｐｄｔスイッチおよびそれを用いた通信機
US6407640B1 (en) * 2000-09-22 2002-06-18 Qualcomm, Incorporated Two-stage LNA with good linearity
EP1351388B1 (en) * 2001-01-09 2013-08-28 Mitsubishi Denki Kabushiki Kaisha Phase shifter and multibit phase shifter
DE10123395A1 (de) * 2001-05-14 2002-11-28 Infineon Technologies Ag Schaltungsanordnung mit kaskadierten Feldeffekttransistoren
US6819184B2 (en) * 2002-11-06 2004-11-16 Cree Microwave, Inc. RF transistor amplifier linearity using suppressed third order transconductance
KR100614928B1 (ko) * 2005-08-17 2006-08-25 삼성전기주식회사 선형화를 위한 미분 중첩회로

Also Published As

Publication number Publication date
US20050176399A1 (en) 2005-08-11
IL177393A (en) 2010-06-16
US7853235B2 (en) 2010-12-14
IL177393A0 (en) 2006-12-10
KR100843997B1 (ko) 2008-07-07
KR20060126816A (ko) 2006-12-08
US20080242257A9 (en) 2008-10-02
WO2005078920A1 (en) 2005-08-25

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2158 DE 15/05/2012.