BRPI0512247A - implantador iÈnico que funciona em modo plasma pulsado - Google Patents

implantador iÈnico que funciona em modo plasma pulsado

Info

Publication number
BRPI0512247A
BRPI0512247A BRPI0512247-3A BRPI0512247A BRPI0512247A BR PI0512247 A BRPI0512247 A BR PI0512247A BR PI0512247 A BRPI0512247 A BR PI0512247A BR PI0512247 A BRPI0512247 A BR PI0512247A
Authority
BR
Brazil
Prior art keywords
pulsed plasma
works
implanter
plasma mode
ionic
Prior art date
Application number
BRPI0512247-3A
Other languages
English (en)
Inventor
Frank Torregrosa
Gilles Mathieu
Laurent Roux
Original Assignee
Ion Beam Services
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Services filed Critical Ion Beam Services
Publication of BRPI0512247A publication Critical patent/BRPI0512247A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)

Abstract

IMPLANTADOR IÈNICO QUE FUNCIONA EM MODO PLASMA PULSADO. A presente invenção refere-se a um implantador IMP que comporta uma fonte plasma pulsada SPL, um prato porta-substrato PPS e uma alimentação ALT desse prato. Esse implantador comporta, além disso, uma capacidade C ligada diretamente à massa E e montada a jusante da alimentação prato ALT. A invenção visa também a um processo de utilização do implantador.
BRPI0512247-3A 2004-06-16 2005-06-14 implantador iÈnico que funciona em modo plasma pulsado BRPI0512247A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0406496A FR2871812B1 (fr) 2004-06-16 2004-06-16 Implanteur ionique fonctionnant en mode plasma pulse
PCT/FR2005/001468 WO2006003322A2 (fr) 2004-06-16 2005-06-14 Implanteur ionique fonctionnant en mode plasma pulse

Publications (1)

Publication Number Publication Date
BRPI0512247A true BRPI0512247A (pt) 2008-02-19

Family

ID=34947642

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0512247-3A BRPI0512247A (pt) 2004-06-16 2005-06-14 implantador iÈnico que funciona em modo plasma pulsado

Country Status (6)

Country Link
US (1) US20080315127A1 (pt)
EP (1) EP1774055A2 (pt)
CN (1) CN1989269A (pt)
BR (1) BRPI0512247A (pt)
FR (1) FR2871812B1 (pt)
WO (1) WO2006003322A2 (pt)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818390B1 (fr) * 2000-12-15 2003-11-07 Ion Beam Services Guide d'onde comportant un canal sur un substrat optique
FR2818755B1 (fr) * 2000-12-26 2004-06-11 Ion Beam Services Dispositif optiquement actif comportant un canal sur un substrat optique
JP2007324185A (ja) * 2006-05-30 2007-12-13 Canon Inc プラズマ処理方法
FR2902575B1 (fr) * 2006-06-14 2008-09-05 Ion Beam Services Sa Appareil de caracterisation optique du dopage d'un substrat
US7655928B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Ion acceleration column connection mechanism with integrated shielding electrode and related methods
US8124942B2 (en) * 2010-02-16 2012-02-28 Fei Company Plasma igniter for an inductively coupled plasma ion source
FR2961010A1 (fr) * 2010-06-03 2011-12-09 Ion Beam Services Dispositif de mesure de dose pour l'implantation ionique en mode immersion plasma
FR2976400B1 (fr) * 2011-06-09 2013-12-20 Ion Beam Services Machine d'implantation ionique en mode immersion plasma pour procede basse pression.
FR2981193B1 (fr) * 2011-10-06 2014-05-23 Ion Beam Services Procede de commande d'un implanteur ionique en mode immersion plasma.
FR2998707B1 (fr) * 2012-11-27 2016-01-01 Ion Beam Services Implanteur ionique pourvu d'une pluralite de corps de source plasma
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106274A (en) * 1976-03-03 1977-09-06 Hitachi Ltd Non-destructive screening method of glass diode and its equipment
JPS62287071A (ja) * 1986-06-06 1987-12-12 Tadahiro Omi 薄膜の形成装置および形成方法
KR930003857B1 (ko) * 1987-08-05 1993-05-14 마쯔시다덴기산교 가부시기가이샤 플라즈마 도우핑방법
US5212425A (en) * 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
WO1995019884A1 (en) * 1994-01-21 1995-07-27 The Regents Of The Universtiy Of California Surface treatment of ceramic articles
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
DE19538903A1 (de) * 1995-10-19 1997-04-24 Rossendorf Forschzent Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens
US5948483A (en) * 1997-03-25 1999-09-07 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing thin film and nanoparticle deposits
DE19740792A1 (de) * 1997-09-17 1999-04-01 Bosch Gmbh Robert Verfahren zur Erzeugung eines Plasmas durch Einstrahlung von Mikrowellen
US6433553B1 (en) * 1999-10-27 2002-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
US6458430B1 (en) * 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
US20010046566A1 (en) * 2000-03-23 2001-11-29 Chu Paul K. Apparatus and method for direct current plasma immersion ion implantation
JP4205294B2 (ja) * 2000-08-01 2009-01-07 キヤノンアネルバ株式会社 基板処理装置及び方法
FR2818390B1 (fr) * 2000-12-15 2003-11-07 Ion Beam Services Guide d'onde comportant un canal sur un substrat optique
FR2818755B1 (fr) * 2000-12-26 2004-06-11 Ion Beam Services Dispositif optiquement actif comportant un canal sur un substrat optique
US20030116089A1 (en) * 2001-12-04 2003-06-26 Walther Steven R. Plasma implantation system and method with target movement
US6803275B1 (en) * 2002-12-03 2004-10-12 Fasl, Llc ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices

Also Published As

Publication number Publication date
FR2871812A1 (fr) 2005-12-23
FR2871812B1 (fr) 2008-09-05
CN1989269A (zh) 2007-06-27
EP1774055A2 (fr) 2007-04-18
WO2006003322A2 (fr) 2006-01-12
WO2006003322A3 (fr) 2006-06-01
US20080315127A1 (en) 2008-12-25

Similar Documents

Publication Publication Date Title
BRPI0512247A (pt) implantador iÈnico que funciona em modo plasma pulsado
CY1106915T1 (el) Συνδυασμοι διαχωριστη(ων) χολικου οξεος και αναστολεα(ων) απορροφησης στερολης και θεραπειες για αγγειακες ενδειξεις
BR0314158A (pt) Método e sistema para autenticação e provisionamento de dados
BRPI0515208A (pt) implante e seu instrumento de colocação
SG136078A1 (en) Uv cure system
TW200715391A (en) Method for lateral dividing of a semiconductor wafer and optoelectronic component
BRPI0703804A (pt) terminal móvel
CR20140422A (es) Composiciones de enzima digestiva estable
TW200802790A (en) Electronic substrate, semiconductor device, and electronic device
WO2004051408A3 (en) Enhanced system, method and medium for certifying and accrediting requirements compliance utilizing threat vulnerability feed
BRPI0715778A8 (pt) Aspectos drm distribuição de conteúdo digital ponto-a-ponto
DE602007010741D1 (de) Emi-abschirmungs- und wärmemanagementbaugruppen mielung
FR2922358B1 (fr) Procede de traitement de surface d'au moins une piece au moyen de sources elementaires de plasma par resonance cyclotronique electronique
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
WO2006116381A3 (en) Plasma or serum fraction for treatment or prevention of abnormal cell proliferation
EA200801942A1 (ru) Способ предотвращения или уменьшения риска возникновения рака с использованием пептидов на основе белков нервных волокон
CY1119444T1 (el) Κατεργασια ταλκη σε εναν διαλυτη
WO2006131921A3 (en) Method, device, and system of maintaining a context of a secure execution environment
GB0625091D0 (en) Thin film transistor array substrate system and method for manufacturing
BR0313532A (pt) Métodos e aparelhos para alìvio de tensão usando múltiplas fontes de energia
TW200700813A (en) Jig for substrate and method of fabricating the same
EP2006734A4 (en) ELECTRONIC ARRANGEMENT, LIGHTING ARRANGEMENT AND METHOD FOR CALCULATING YOUR ELECTRICAL AMOUNT
NO20075654L (no) Modulfront for en koplingssammenstillingsmodul, koplingssammenstillingsmodul og elektrisk koplingssammenstilling
TW200737271A (en) Techniques for reducing effects of photoresist outgassing
ATE363142T1 (de) Gehäuse zur aufnahme eines elektrischen gerätes

Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: INDEFIRO O PEDIDO DE ACORDO COM O ART. 8OCOMBINADO COM ART. 11, ART. 8O COMBINADO COM ART. 13 E ART. 25LPI

B09B Patent application refused [chapter 9.2 patent gazette]