BRPI0517346A - detector de fotovoltagem - Google Patents

detector de fotovoltagem

Info

Publication number
BRPI0517346A
BRPI0517346A BRPI0517346-9A BRPI0517346A BRPI0517346A BR PI0517346 A BRPI0517346 A BR PI0517346A BR PI0517346 A BRPI0517346 A BR PI0517346A BR PI0517346 A BRPI0517346 A BR PI0517346A
Authority
BR
Brazil
Prior art keywords
laser beam
exposed
doping concentration
voltage
temporal
Prior art date
Application number
BRPI0517346-9A
Other languages
English (en)
Inventor
Johan Stiens
Gennady Shkerdin
Vladimir Kotov
Original Assignee
Univ Bruxelles
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Bruxelles filed Critical Univ Bruxelles
Publication of BRPI0517346A publication Critical patent/BRPI0517346A/pt

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0214—Constructional arrangements for removing stray light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Lasers (AREA)

Abstract

DETECTOR DE FOTOVOLTAGEM. A presente invenção refere-se a um método e sistema para detectar e monitorar uma distribuição temporal e espacial de um feixe de luz são fornecidos. Um substrato semicondutor (120) tendo uma dada faixa de concentração de dopagem é parcialmente exposta a um feixe de laser incidente (150). Cada parte da estrutura de semicondutor (120) que é exposta ao feixe de laser é fornecida com um contato elétrico (145), que transmite uma voltagem que é diretamente relacionada na potência óptica ou energia incidente na área exposta. A termo-voltagem é produzida pelos gradientes térmicos induzidos por laser. A sensibilidade e diafonia interpixel é determinada pela densidade de pixel, concentração de dopagem e abertura de janela (110). Dependendo do desenho, cada pixel poderia ser sensível à variação temporal do feixe de laser.
BRPI0517346-9A 2004-09-23 2005-09-23 detector de fotovoltagem BRPI0517346A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/949,120 US7193202B2 (en) 2004-09-23 2004-09-23 Photovoltage detector
PCT/EP2005/010318 WO2006032521A1 (en) 2004-09-23 2005-09-23 Photovoltage detector

Publications (1)

Publication Number Publication Date
BRPI0517346A true BRPI0517346A (pt) 2008-10-07

Family

ID=35526089

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0517346-9A BRPI0517346A (pt) 2004-09-23 2005-09-23 detector de fotovoltagem

Country Status (6)

Country Link
US (2) US7193202B2 (pt)
EP (1) EP1792150A1 (pt)
JP (1) JP2008513796A (pt)
BR (1) BRPI0517346A (pt)
CA (1) CA2579585A1 (pt)
WO (1) WO2006032521A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE405369T1 (de) * 2005-04-01 2008-09-15 Trumpf Werkzeugmaschinen Gmbh Optisches element sowie verfahren zur erfassung von strahlparametern, mit einem als pixels-matrix ausgebildeten temperatursensor
CN101551294B (zh) * 2009-04-30 2010-11-17 中国科学院上海技术物理研究所 一种检测光照下半导体光探测器件表面漏电通道的方法
CN103344328B (zh) * 2013-07-15 2015-01-07 河北大学 一种多层结构横向热电光探测器
DE102013223061A1 (de) * 2013-11-13 2014-09-04 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Ermitteln eines jeweiligen intrinsischen Parameters von Pixeln eines Sensors einer Mikrobolometerkamera
US11156716B1 (en) * 2016-02-15 2021-10-26 Red Creamery Llc Hybrid LADAR with co-planar scanning and imaging field-of-view
DE102016121803A1 (de) * 2016-11-14 2018-05-17 Cl Schutzrechtsverwaltungs Gmbh Vorrichtung zur additiven Herstellung dreidimensionaler Objekte
US10515861B2 (en) 2017-07-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for calibrating temperature in chemical vapor deposition
RU2676188C1 (ru) * 2018-02-05 2018-12-26 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Свч фотоприемник лазерного излучения
RU2676228C1 (ru) * 2018-02-19 2018-12-26 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Мощный импульсный свч фотодетектор
RU2676187C1 (ru) * 2018-02-21 2018-12-26 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Свч фотодетектор лазерного излучения

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624542A (en) * 1968-07-26 1971-11-30 Trw Inc Control for power output of gas laser
US4243888A (en) * 1979-05-10 1981-01-06 The United States Of America As Represented By The United States Department Of Energy Laser beam alignment apparatus and method
US4720627A (en) * 1986-11-03 1988-01-19 United States Of America As Represented By The Secretary Of The Air Force Ion sensitive photodetector
KR100350012B1 (ko) * 1994-03-01 2002-12-16 세이코 엡슨 가부시키가이샤 반도체레이저및이것을사용한광센싱장치
US6078183A (en) * 1998-03-03 2000-06-20 Sandia Corporation Thermally-induced voltage alteration for integrated circuit analysis
US6710343B2 (en) * 2000-03-22 2004-03-23 The United States Of America As Represented By The Secretary Of The Navy Photon detector
WO2001073386A1 (de) * 2000-03-29 2001-10-04 Siemens Aktiengesellschaft Vorrichtung zur detektion von wärmestrahlung, verfahren zur herstellung und verwendung der vorrichtung
US20020042831A1 (en) 2000-08-16 2002-04-11 Jeffrey Capone System and method for building applications that adapt for multiple device and protocol standards

Also Published As

Publication number Publication date
CA2579585A1 (en) 2006-03-30
US7193202B2 (en) 2007-03-20
US20060060754A1 (en) 2006-03-23
JP2008513796A (ja) 2008-05-01
WO2006032521A1 (en) 2006-03-30
US20070252085A1 (en) 2007-11-01
EP1792150A1 (en) 2007-06-06

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B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]