BRPI0608019A2 - sensor magnético e método para manufaturar um sensor magnético - Google Patents
sensor magnético e método para manufaturar um sensor magnéticoInfo
- Publication number
- BRPI0608019A2 BRPI0608019A2 BRPI0608019-7A BRPI0608019A BRPI0608019A2 BR PI0608019 A2 BRPI0608019 A2 BR PI0608019A2 BR PI0608019 A BRPI0608019 A BR PI0608019A BR PI0608019 A2 BRPI0608019 A2 BR PI0608019A2
- Authority
- BR
- Brazil
- Prior art keywords
- axis
- magnetic sensor
- sensor
- magnoresistive
- magnetization
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 230000000694 effects Effects 0.000 abstract 7
- 230000005415 magnetization Effects 0.000 abstract 3
- 230000035945 sensitivity Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
SENSOR MAGNéTICO E MéTODO PARA MANUFATURAR UM SENSOR MAGNéTICO. No sensor magnético de três eixos da presente Invenção, uma pluralidade de barras de elemento de efeito magnetorresistivo é conectada em série por meio de ímãs oblíquos para constituir elementos de efeito magnetorresistivo, e elementos de efeito magnetorresistivo do sensor de eixo X e aqueles do sensor de eixo Y são formados sobre uma superfície plana paralela à superfície plana do substrato. A direção de sensibilidade da magnetização é a direção vertical à direção longitudinal de cada uma das barras de elemento de efeito magnetorresístívo, e elementos de efeito magnetorresistivo do sensor de eixo X e aqueles do sensor de eixo Y são formados de tal modo que as direções de magnetização são ortogonais entre si. Além disso, elementos de efeito magnetorresistívo do eixo Z são formados sobre uma superfície inclinada da projeção projetada da superfície plana do substrato de tal modo que a direção de magnetização está dentro da superfície inclinada. O sensor de eixo z é provido de tal forma que a direção de sensibilidade é vertical à direção longitudinal da barra de elemento de efeito magnetorresistivo.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005077010A JP4984408B2 (ja) | 2005-03-17 | 2005-03-17 | 磁気センサおよびその製法 |
| JP2005091256 | 2005-03-28 | ||
| JP2005090581A JP4940565B2 (ja) | 2005-03-28 | 2005-03-28 | 磁気センサの製造方法 |
| JP2006032125A JP4735305B2 (ja) | 2006-02-09 | 2006-02-09 | 三軸磁気センサおよびその製造方法 |
| JP2006032124A JP4735304B2 (ja) | 2006-02-09 | 2006-02-09 | 三軸磁気センサおよびその製造方法 |
| PCT/JP2006/305399 WO2006098431A1 (ja) | 2005-03-17 | 2006-03-17 | 三軸磁気センサおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0608019A2 true BRPI0608019A2 (pt) | 2009-11-03 |
Family
ID=36991775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0608019-7A BRPI0608019A2 (pt) | 2005-03-17 | 2006-03-17 | sensor magnético e método para manufaturar um sensor magnético |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20090027048A1 (pt) |
| EP (1) | EP1860451B1 (pt) |
| KR (1) | KR100950615B1 (pt) |
| BR (1) | BRPI0608019A2 (pt) |
| CA (1) | CA2601130A1 (pt) |
| TW (3) | TWI361503B (pt) |
| WO (1) | WO2006098431A1 (pt) |
Families Citing this family (84)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| DE102008041859A1 (de) | 2008-09-08 | 2010-03-11 | Robert Bosch Gmbh | Magnetfeldsensoranordnung zur Messung von räumlichen Komponenten eines magnetischen Feldes |
| US8289019B2 (en) * | 2009-02-11 | 2012-10-16 | Infineon Technologies Ag | Sensor |
| DE102009024268B4 (de) | 2009-06-05 | 2015-03-05 | Integrated Dynamics Engineering Gmbh | Magnetfeldkompensation |
| KR101608339B1 (ko) * | 2009-06-08 | 2016-04-11 | 삼성전자주식회사 | 위치 측정 장치 및 방법, 및 이동체 |
| WO2011007767A1 (ja) | 2009-07-13 | 2011-01-20 | 日立金属株式会社 | 磁気抵抗効果素子の製造方法、磁気センサ、回転角度検出装置 |
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| ITTO20121067A1 (it) | 2012-12-12 | 2014-06-13 | St Microelectronics Srl | Sensore magnetoresistivo integrato in una piastrina per il rilevamento di campi magnetici perpendicolari alla piastrina nonche' suo procedimento di fabbricazione |
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| DE102014202770B4 (de) * | 2014-02-14 | 2019-04-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | 3d magnetfeldsensor und verfahren zu dessen herstellung |
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| JP6503089B2 (ja) | 2015-12-03 | 2019-04-17 | アルプスアルパイン株式会社 | 磁気検知装置およびその製造方法 |
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| US11628275B2 (en) | 2018-01-31 | 2023-04-18 | Analog Devices, Inc. | Electronic devices |
| US10753989B2 (en) * | 2018-08-27 | 2020-08-25 | Allegro Microsystems, Llc | Magnetoresistance element with perpendicular or parallel magnetic anistropy |
| JP6986002B2 (ja) | 2018-11-26 | 2021-12-22 | Tdk株式会社 | 磁気センサ装置 |
| JP7455511B2 (ja) * | 2019-02-25 | 2024-03-26 | Tdk株式会社 | 磁気センサ及びその製造方法 |
| JP6886222B2 (ja) * | 2019-03-19 | 2021-06-16 | Tdk株式会社 | 磁気センサ |
| JP6984792B2 (ja) | 2019-06-11 | 2021-12-22 | 株式会社村田製作所 | 磁気センサ、磁気センサアレイ、磁場分布測定装置、および位置特定装置 |
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| CN110927637A (zh) * | 2019-11-30 | 2020-03-27 | 北京航空航天大学青岛研究院 | 一种三轴mtj磁场传感器及其制备方法 |
| US11719772B2 (en) | 2020-04-01 | 2023-08-08 | Analog Devices International Unlimited Company | AMR (XMR) sensor with increased linear range |
| RU2746309C1 (ru) * | 2020-09-07 | 2021-04-12 | Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") | Магниточувствительный сенсор со сниженным показателем коэрцитивной силы (варианты) |
| EP3992655A1 (en) * | 2020-11-03 | 2022-05-04 | Crocus Technology S.A. | Magnetoresistive sensor element having a wide linear response and robust nominal performance and manufacturing method thereof |
| US11630168B2 (en) * | 2021-02-03 | 2023-04-18 | Allegro Microsystems, Llc | Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction |
| CN112995861B (zh) * | 2021-03-01 | 2022-12-23 | 歌尔微电子股份有限公司 | 传感器和电子设备 |
| US11493567B2 (en) | 2021-03-31 | 2022-11-08 | Tdk Corporation | Magnetic sensor device and magnetic sensor system |
| JP7332738B2 (ja) | 2021-07-08 | 2023-08-23 | Tdk株式会社 | 磁気センサ装置および磁気センサシステム |
| US12498433B2 (en) | 2021-09-21 | 2025-12-16 | Tdk Corporation | Sensor |
| US11971461B2 (en) | 2021-09-21 | 2024-04-30 | Tdk Corporation | Sensor having protruding surface |
| DE102022124051A1 (de) * | 2021-09-21 | 2023-03-23 | Tdk Corporation | Magnetsensor |
| CN114220913A (zh) * | 2021-12-01 | 2022-03-22 | 上海矽睿科技股份有限公司 | 一种三轴磁传感器及其制备工艺 |
| CN114675215B (zh) * | 2022-03-21 | 2024-12-27 | 华中科技大学 | 一种纯电操控纳米三维磁传感器及其阵列与磁场测量方法 |
| US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
| US12320870B2 (en) | 2022-07-19 | 2025-06-03 | Allegro Microsystems, Llc | Controlling out-of-plane anisotropy in an MR sensor with free layer dusting |
| WO2024189764A1 (ja) * | 2023-03-14 | 2024-09-19 | 三菱電機株式会社 | 電流センサ |
| US12591026B2 (en) | 2023-06-13 | 2026-03-31 | Allegro Microsystems, Llc | Tunnel magnetoresistance element to detect out-of-plane changes in a magnetic field intensity of a magnetic field |
| US12347595B2 (en) | 2023-06-13 | 2025-07-01 | Allegro Microsystems, Llc | Magnetoresistance element including a skyrmion layer and a vortex layer that are magnetically coupled to each other |
| DE102023212076A1 (de) * | 2023-12-01 | 2025-06-05 | Robert Bosch Gesellschaft mit beschränkter Haftung | Magnetoresistive Erfassungsvorrichtung |
| US20260063733A1 (en) * | 2024-08-28 | 2026-03-05 | Allegro Microsystems, Llc | Magnetic sensor having sensing elements on sloped substrate |
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-
2006
- 2006-03-17 TW TW097125332A patent/TWI361503B/zh not_active IP Right Cessation
- 2006-03-17 EP EP06729388A patent/EP1860451B1/en not_active Ceased
- 2006-03-17 WO PCT/JP2006/305399 patent/WO2006098431A1/ja not_active Ceased
- 2006-03-17 TW TW097125334A patent/TWI360243B/zh not_active IP Right Cessation
- 2006-03-17 CA CA002601130A patent/CA2601130A1/en not_active Abandoned
- 2006-03-17 KR KR1020077020878A patent/KR100950615B1/ko not_active Expired - Fee Related
- 2006-03-17 US US11/908,549 patent/US20090027048A1/en not_active Abandoned
- 2006-03-17 BR BRPI0608019-7A patent/BRPI0608019A2/pt not_active IP Right Cessation
- 2006-03-17 TW TW095109283A patent/TWI307977B/zh not_active IP Right Cessation
-
2012
- 2012-06-13 US US13/517,526 patent/US20120268113A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR100950615B1 (ko) | 2010-04-01 |
| EP1860451A4 (en) | 2010-11-10 |
| TWI361503B (en) | 2012-04-01 |
| TW200901527A (en) | 2009-01-01 |
| KR20070104659A (ko) | 2007-10-26 |
| US20120268113A1 (en) | 2012-10-25 |
| EP1860451B1 (en) | 2012-06-27 |
| WO2006098431A1 (ja) | 2006-09-21 |
| TW200707816A (en) | 2007-02-16 |
| US20090027048A1 (en) | 2009-01-29 |
| TWI307977B (en) | 2009-03-21 |
| CA2601130A1 (en) | 2006-09-21 |
| EP1860451A1 (en) | 2007-11-28 |
| TW200849684A (en) | 2008-12-16 |
| TWI360243B (en) | 2012-03-11 |
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| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
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