BRPI0622083A2 - Método e aparelho destinados à fabricação de substratos purificados ou substratos puros que são adicionalmente processados. - Google Patents

Método e aparelho destinados à fabricação de substratos purificados ou substratos puros que são adicionalmente processados.

Info

Publication number
BRPI0622083A2
BRPI0622083A2 BRPI0622083-5A2A BRPI0622083A BRPI0622083A2 BR PI0622083 A2 BRPI0622083 A2 BR PI0622083A2 BR PI0622083 A BRPI0622083 A BR PI0622083A BR PI0622083 A2 BRPI0622083 A2 BR PI0622083A2
Authority
BR
Brazil
Prior art keywords
substrates
manufacture
pure
purified
additional processed
Prior art date
Application number
BRPI0622083-5A2A
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Oliver Gstoehl
Daniel Lendi
Original Assignee
Oerlikon Trading Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading Ag filed Critical Oerlikon Trading Ag
Publication of BRPI0622083A2 publication Critical patent/BRPI0622083A2/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
BRPI0622083-5A2A 2006-10-27 2006-10-27 Método e aparelho destinados à fabricação de substratos purificados ou substratos puros que são adicionalmente processados. BRPI0622083A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/067869 WO2008049463A1 (en) 2006-10-27 2006-10-27 Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed

Publications (1)

Publication Number Publication Date
BRPI0622083A2 true BRPI0622083A2 (pt) 2014-06-10

Family

ID=38169703

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0622083-5A2A BRPI0622083A2 (pt) 2006-10-27 2006-10-27 Método e aparelho destinados à fabricação de substratos purificados ou substratos puros que são adicionalmente processados.

Country Status (13)

Country Link
US (1) US10418230B2 (pt)
EP (2) EP2081700A1 (pt)
JP (1) JP5184541B2 (pt)
KR (1) KR101339501B1 (pt)
CN (1) CN101528369B (pt)
AU (1) AU2006349512B2 (pt)
BR (1) BRPI0622083A2 (pt)
CA (1) CA2664516A1 (pt)
HU (1) HUE035964T2 (pt)
MX (1) MX2009004065A (pt)
PL (1) PL2158977T3 (pt)
TW (1) TWI436412B (pt)
WO (1) WO2008049463A1 (pt)

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JP5627518B2 (ja) * 2011-03-16 2014-11-19 大日本スクリーン製造株式会社 基板処理装置および電源管理方法
JP5785528B2 (ja) * 2012-09-07 2015-09-30 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，トリュープバッハ 被洗浄基板、あるいは、さらに処理される清潔な基板を製造するための、方法および装置
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
EP3109034B1 (en) * 2015-06-24 2020-07-15 British Telecommunications public limited company Printed logic gate
KR101920249B1 (ko) * 2015-06-29 2018-11-20 가부시키가이샤 알박 기판 처리 장치
CN105220115B (zh) * 2015-10-31 2018-06-26 华有光电（东莞）有限公司 一种对镀膜产品二次清洁的离子净化系统及其净化方法
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
JP7595573B2 (ja) * 2018-12-21 2024-12-06 エヴァテック・アーゲー 真空処理装置、および、少なくとも１つの基板の真空プラズマ処理または基板の製造のための方法
CH715877A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Vakuumkammer mit Elektrodenanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
CH715878A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
KR102274459B1 (ko) * 2019-12-27 2021-07-07 한국기계연구원 플라즈마 세정장치 및 이를 구비한 반도체 공정설비
RU2757458C1 (ru) * 2021-01-26 2021-10-18 Акционерное Общество "Центр Прикладной Физики Мгту Им. Н.Э. Баумана" Способ управления холодной плазмой посредством микрорельефа на твёрдом диэлектрике
JP7789604B2 (ja) 2022-03-24 2025-12-22 キオクシア株式会社 エッチング方法、エッチング装置、半導体装置の製造方法及び原版の製造方法
JP7836738B2 (ja) * 2022-08-29 2026-03-27 株式会社神戸製鋼所 イオンボンバードメント装置及びイオンボンバードメント処理方法

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GB521920A (en) * 1938-11-28 1940-06-04 Gen Electric Co Ltd Improvements in or relating to the protection of direct current electric supply systems
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
US5503725A (en) 1991-04-29 1996-04-02 Novatech Method and device for treatment of products in gas-discharge plasma
DE4125365C1 (pt) 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
US5302271A (en) * 1992-08-25 1994-04-12 Northeastern University Anodic vacuum arc deposition system
DE4228499C1 (de) 1992-09-01 1993-10-07 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zur plasmagestützten Beschichtung von Substraten
DE4306611B4 (de) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
JPH08107073A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd プラズマ処理装置、及びその洗浄方法
WO1996031997A1 (en) * 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
RU2094896C1 (ru) * 1996-03-25 1997-10-27 Научно-производственное предприятие "Новатех" Источник быстрых нейтральных молекул
US5754581A (en) * 1996-11-18 1998-05-19 Mclellan; Edward J. Differential impedance discharge for plasma generation
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
KR100856451B1 (ko) * 2000-04-25 2008-09-04 도쿄엘렉트론가부시키가이샤 소재의 플라즈마 세정장치 및 방법
US6391164B1 (en) * 2000-06-23 2002-05-21 Isak I. Beilis Deposition of coatings and thin films using a vacuum arc with a non-consumable hot anode
US6444103B1 (en) * 2000-09-15 2002-09-03 Cvc Products, Inc. Method and apparatus for thin film deposition using an active shutter
JP2002143795A (ja) 2000-11-14 2002-05-21 Sekisui Chem Co Ltd 液晶用ガラス基板の洗浄方法
US7199327B2 (en) * 2002-06-28 2007-04-03 Tokyo Electron Limited Method and system for arc suppression in a plasma processing system
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US20050061444A1 (en) * 2003-09-24 2005-03-24 Yoshiaki Noda Plasma cleaning device

Also Published As

Publication number Publication date
MX2009004065A (es) 2009-04-28
CN101528369A (zh) 2009-09-09
JP5184541B2 (ja) 2013-04-17
TWI436412B (zh) 2014-05-01
US10418230B2 (en) 2019-09-17
HUE035964T2 (hu) 2018-06-28
KR101339501B1 (ko) 2013-12-10
EP2158977B1 (en) 2017-05-17
EP2158977A1 (en) 2010-03-03
KR20090091293A (ko) 2009-08-27
TW200830390A (en) 2008-07-16
EP2081700A1 (en) 2009-07-29
JP2010507239A (ja) 2010-03-04
CN101528369B (zh) 2013-03-20
PL2158977T3 (pl) 2017-10-31
WO2008049463A1 (en) 2008-05-02
AU2006349512A1 (en) 2008-05-02
CA2664516A1 (en) 2008-05-02
AU2006349512B2 (en) 2013-07-11
US20080099039A1 (en) 2008-05-01

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE. PAGAR RESTAURACAO.

B08H Application fees: decision cancelled [chapter 8.8 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 NA RPI 2277 DE 26/08/2014

B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11N Dismissal: publication cancelled [chapter 11.14 patent gazette]

Free format text: REFERENTE A RPI NO 2288 DE 11/11/2014, POR TER SIDO INDEVIDO.

B25G Requested change of headquarter approved

Owner name: OERLIKON TRADING AG, TRUEBBACH (CH)

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]